2N5911
Abstract: IFN5911 IFN5912 2N5912
Text: Databook.fxp 1/13/99 2:09 PM Page F-22 F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj
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NJ36D
2N5911,
2N5912
IFN5911,
IFN5912
2N5911
IFN5911
IFN5912
2N5912
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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IFN5912
Abstract: IFN5911 NJ-30
Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation
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IFN5911,
IFN5912
IFN5911
IFN5912
IFN5911
NJ-30
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2N5912
Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
Text: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation
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2N5911,
2N5912
2N5911
NJ30L
NJ36D
SMP5911,
SMP5912
2N5912
2N5911
B-23
SMP5911
SMP5912
NJ-30
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2n5485 equivalent transistor
Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416
Text: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation
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2N4416,
2N4416A
2N4416
O-226AB
O-92/18)
2n5485 equivalent transistor
transconductance 2N5485
2N4416 equivalent
2N5485
interfet
2N4416
2N4416A
2N5484
2N5486
SMP4416
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CD860
Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation
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IFN5911,
IFN5912
IFN5911
CD860
IFN860
NJ3600L
IF3602
IFN5911
IFN5912
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