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    NF50 HP Search Results

    NF50 HP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NF50-HP Mitsubishi Circuit Breaker, 2 Poles | 3 Poles | 4 Poles, 600VAC, 50A Original PDF

    NF50 HP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor fb 31n

    Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
    Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion


    Original     		PDF MRF581/D MRF581 MRF5812R1, MRF5812 MRF581 transistor fb 31n MRF5815 case 317-01 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812R1

    str 6229

    Abstract: microstripline str 6228 MGA-86576 MGA-86576-STR MGA-86576-TR1 NF50 c-band lna chip
    Text: 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86576 Features • 1.6 dB Noise Figure at 4 GHz • 23 dB Gain at 4 GHz • +6 dBm P1dB at 4 GHz • Single +5 V Bias Supply Surface Mount Ceramic Package Applications Pin Connections 4 RF INPUT


    Original     		PDF MGA-86576 MGA-86576 MGA-86576. MGA-86576-STR MGA-86576-TR1 str 6229 microstripline str 6228 MGA-86576-STR MGA-86576-TR1 NF50 c-band lna chip

    NF50 HP

    Abstract: MGA-86576 MGA-86576-STR MGA-86576-TR1 NF50
    Text: 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86576 Features • 1.6 dB Noise Figure at 4 GHz • 23 dB Gain at 4 GHz • +6 dBm P1dB at 4 GHz • Single +5 V Bias Supply Surface Mount Ceramic Package Applications Pin Connections 4 RF INPUT


    Original     		PDF MGA-86576 MGA-86576 MGA-86576-STR MGA-86576-TR1 5962-6909E 5965-9687E NF50 HP MGA-86576-STR MGA-86576-TR1 NF50

    NF50

    Abstract: U2796B
    Text: Features • • • • • • Supply Voltage Range: 2.7 V to 5.5 V Excellent Isolation Characteristics Low Current Consumption: 3.2 mA without RIP3 IIP3 Programmable Input Frequency Operating Range Up to 2 GHz RF Characteristics Nearly Independent of Supply Voltage


    Original     		PDF U2796B U2796B NF50

    v052

    Abstract: GP 005 variable gain amplifier GHz IVA-05228 NF50
    Text: Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Option Technical Data IVA-05228 Features Description • Differential Input and Output Capability • DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates • High Gain: 30 dB Typical • Wide Gain Control Range:


    Original     		PDF IVA-05228 IVA-05228 v052 GP 005 variable gain amplifier GHz NF50

    200 mil BeO package

    Abstract: HP MMIC MSA-0520 NF50
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0520 Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0␣ GHz • Low Distortion: 33 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz


    Original     		PDF MSA-0520 MSA-0520 200 mil BeO package HP MMIC NF50

    MSA-0520

    Abstract: NF50 200 mil BeO package
    Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Hermetic Metal/Beryllia


    Original     		PDF MSA-0520 MSA-0520 5965-9582E NF50 200 mil BeO package

    motorola 7673 A

    Abstract: Motorola 8039 7818 motorola MRF957 Sps 6525 motorola 7673 b 6814 motorola 40 pin sot-23 marking 7z MMBR951 MMBR951ALT1
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA The RF Line Order this document by MMBR951/D MMBR951 NPN Silicon Low Noise, High-Frequency Transistors MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series


    Original     		PDF MMBR951/D MMBR951 MRF957 MMBR951LT1 MRF957T1 MMBR951 motorola 7673 A Motorola 8039 7818 motorola MRF957 Sps 6525 motorola 7673 b 6814 motorola 40 pin sot-23 marking 7z MMBR951ALT1

    motorola 7673 A

    Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.


    Original     		PDF MMBR951/D MMBR951 MRF957 MMBR951LT1 MRF957T1 MMBR951 motorola 7673 A MRF957 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039

    motorola 7673 A

    Abstract: MMBR951 MRF957 sot-23 marking 7z MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 25SEP01
    Text: The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.


    Original     		PDF MMBR951/D MMBR951 MRF957 MMBR951LT1 MRF957T1 MMBR951 motorola 7673 A MRF957 sot-23 marking 7z MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 25SEP01

    Untitled

    Abstract: No abstract text available
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT


    Original     		PDF AT-41486 AT-41486 5965-8928E

    at-41470

    Abstract: Silicon Bipolar Transistor Hewlett-Packard
    Text: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth


    Original     		PDF AT-41470 AT-41470 5965-8927E 5966-4946E Silicon Bipolar Transistor Hewlett-Packard

    Hp70908A

    Abstract: NF50 U2796B U2796B-FP
    Text: U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the receiver


    Original     		PDF U2796B-FP U2796B-FP U2796B D-74025 Hp70908A NF50

    Untitled

    Abstract: No abstract text available
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT


    Original     		PDF AT-41486 5965-8928E 5968-2031E

    MRF571

    Abstract: MMBR571LT1 MRF5711LT1 NF50 11608a J500
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


    Original     		PDF MMBR571LT1/D MMBR571LT1 MRF571 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF571 MRF5711LT1 NF50 11608a J500

    "RF Power Splitter"

    Abstract: balun diode mixer hp 7820 u 7759 9632 transistor NF50 U2796B U2796B-FP ozone generator circuit
    Text: U2796B 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TEMIC Semiconductors advanced bipolar technology. The U2796B is well suited for the receiver portion of the RF circuit. Single balanced


    Original     		PDF U2796B U2796B-FP U2796B D-74025 15-Oct-98 "RF Power Splitter" balun diode mixer hp 7820 u 7759 9632 transistor NF50 ozone generator circuit

    "RF Power Splitter"

    Abstract: balun diode mixer NF50 U2796B U2796B-FP ozone generator circuit
    Text: U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the receiver


    Original     		PDF U2796B-FP U2796B-FP U2796B D-74025 "RF Power Splitter" balun diode mixer NF50 ozone generator circuit

    MRF9511

    Abstract: MRF9511 equivalent MRF9511LT1 NF 027 J220 177.138 MMBR951 MRF957 NF 034 MMBR951ALT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.


    Original     		PDF MMBR951ALT1/D MMBR951 MRF957 MRF9511 MMBR951LT1, MMBR951ALT1 MRF957T1 MMBR951 MRF957 MRF9511 MRF9511 equivalent MRF9511LT1 NF 027 J220 177.138 NF 034 MMBR951ALT1

    ic 8259

    Abstract: marking AF SOT mrf9511 sps 6580
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.


    Original     		PDF MMBR951/D MMBR951 MRF957 MRF9511 MMBR951LT1 MRF957T1 MRF9511LT1 ic 8259 marking AF SOT sps 6580

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


    Original     		PDF MMBR571LT1/D MMBR571LT1 MPS571 MRF571 MRF5711LT1 226AA MRF5711LT1, MRF571) A/500 MMBR571LT1)

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD 1 .5 - 8 GHz Low N oise GaAs MMIC Amplifier Technical Data MGA-86576 Features • • • • 1.6 dB N oise Figure at 4 GHz 23 dB Gain at 4 GHz + 6 dBmPldB at 4 GHz Single + 5 V B ias Supply Surface Mount Ceramic Package Applications


    OCR Scan     		PDF MGA-86576 MGA-865 MGA-86576. MGA-86576 76-STR MGA-86576-TR1

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS blE T> • WL^m HEW LETT ml'HM PACKARD 4447SflL4 DOlDGflh 4SI ■ H P A MSA-0500 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline^ • Cascadable 50 £2 Gain Block • High Output Power: +23 dBm typical P1dB at


    OCR Scan     		PDF 4447SflL4 MSA-0500 MSA-0500

    RJP3

    Abstract: U2796B U2796B-FP
    Text: Temic U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Blanaced M ixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the


    OCR Scan     		PDF u2796b-fp U2796B-FP U2796B D-74025 00124cà RJP3

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Blanaced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the


    OCR Scan     		PDF U2796B-FP U2796B-FP U2796B D-74025