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    NF 747 Search Results

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    NF 747 Price and Stock

    Glenair Inc 667-474NF17T1J

    Circular MIL Spec Tools, Hardware & Accessories 6+ start 3 weeks AOC
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    Mouser Electronics 667-474NF17T1J
    • 1 $1325.85
    • 10 $741.85
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    Glenair Inc 667-475NF18T1J

    Circular MIL Spec Tools, Hardware & Accessories 6+ start 3 weeks AOC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 667-475NF18T1J
    • 1 $1325.85
    • 10 $741.85
    • 100 $741.85
    • 1000 $741.85
    • 10000 $741.85
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    Glenair Inc 667-475NF21T1J

    Circular MIL Spec Tools, Hardware & Accessories 6+ start 6 wks
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 667-475NF21T1J
    • 1 $1443.4
    • 10 $1209.75
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    Glenair Inc 447HJ747NF1706

    Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER
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    Mouser Electronics 447HJ747NF1706
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    • 10 $500.02
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    Glenair Inc 447HJ747NF2509

    Circular MIL Spec Backshells COMMERCIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 447HJ747NF2509
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    • 10 $560.87
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    NF 747 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF


    Original     		PDF F-67441

    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET

    Untitled

    Abstract: No abstract text available
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Eud49

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet

    5503 FET

    Abstract: 5503 GM FSU02LG FSU02
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG 5503 FET 5503 GM FSU02

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG

    747d

    Abstract: 747D812M035AA2A
    Text: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.


    Original     		PDF 35VDC. Nomina47D333M025AC2A 747D383M025AD2A 747D443M025AE2A 747D493M025AF2A 747D293M025BA2A 747D353M025BM2A 747D463M025BB2A 747D583M025BL2A 747D703M025BC2A 747d 747D812M035AA2A

    747d

    Abstract: 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953
    Text: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.


    Original     		PDF -105C 747d 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953

    2N6617

    Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
    Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		PDF 2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. 2N6617 HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101

    Untitled

    Abstract: No abstract text available
    Text: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    NEC 3536

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •


    OCR Scan     		PDF NE76118 NE76118 NE76118-T1 NE76118-T2 NEC 3536

    fujitsu gaas fet

    Abstract: FSU02LG FUJITSU RF 053
    Text: FSU02LG General Purpose GaAs FET FEATURES • • • • • • High Output Power: P ^ b = 23.0dBm Typ. @2GHz High Associated Gain: G ^ b = 17.0dB (Typ.)@2GHz Low Noise Figure: NF=1,5dB (Typ.)@ f=2G Hz Low Bias Conditions: VQg=3V, 20mA Cost Effective Hermetic Microstrip Package


    OCR Scan     		PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet FUJITSU RF 053

    063 793

    Abstract: transistor v63
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


    OCR Scan     		PDF NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63

    NE32184A

    Abstract: NE32100 NE32183A nec ne3 INE32184A
    Text: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF bM27M14 0G205M NE32100 NE32183A NE32184A NE321 associat105 34-6393/FAX S88-0279 NOT1CE-1848 NE32184A NE32100 NE32183A nec ne3 INE32184A

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905

    817 CN

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN

    NE76084

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		PDF NE76084 NE76084 GHz21 lS211 NE76084S NE76084-T1 00b5511

    Hewlett-Packard application note 967

    Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
    Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


    OCR Scan     		PDF 2N66170 HXTR-6101) HXTR-6102 2N6617) HXTR-6102) 2N6617 HPAC-70GT, MIL-S-19500 MIL-STD-750/883. Hewlett-Packard application note 967 HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor

    metal film fused resistor 47

    Abstract: 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4
    Text: HIGH perfo rm a n ce ana & s ìn tegsateo cmcufTS EL2045C Low-Power 100 MHz Gain-nf-2 Stable Operational A m plifier F e a tu r e s G e n e ra l D escrip tio n • 100 M Hz gain-bandwidth product • Gain-of-2 stable T he E L 2045C is a high speed, low power, low cost monolithic


    OCR Scan     		PDF EL2045C 150ft 1000ft 500ft metal film fused resistor 47 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4

    HT 1000-4 power amplifier

    Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
    Text: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D


    OCR Scan     		PDF ADP3050-5 ADP3603/4/5 ADMC300 ADMC330 ADMC331 HT 1000-4 power amplifier mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v

    Untitled

    Abstract: No abstract text available
    Text: F-206-1 2 mm ESS nf PTT, PTF SERIES SPECIFICATIONS ROW OPTION For co m p le te specifications se e w w w .sam tec.com ?P T T o r w w w .sam tec.com ?P TF In s u la to r M a te ria l: B lack Liquid C rystal t o Polym er C o n ta c t M a te ria l: P ho sp ho r Bronze


    OCR Scan     		PDF F-206-1 689CG37 852-26904858-Fax: 747-Fax:

    Untitled

    Abstract: No abstract text available
    Text: Metallized Polypropylene Film Capacitors MFP in Plastic Case MFP pulse capacitors w ith highest possible contact reliability B 32 682 . B 32 686 ; t Construction • • • • Dielectric: polypropylene Film m etallized on one side and metal foils internally connected in series


    OCR Scan     		PDF rms500 fl235b05 fl535bO CI074R00