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    NF 018 GE Search Results

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    FD300 diode

    Abstract: F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach
    Text: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS


    Original     		PDF 72VDC MIL-R-6106 CEECC16101-018 SF300CE40E FD300 diode F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach

    isolation pad 10114

    Abstract: Leach f370 F300 relay F370-B
    Text: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS


    Original     		PDF 72VDC MIL-R-6106 CEECC16101-018 SF300CE40E isolation pad 10114 Leach f370 F300 relay F370-B

    Untitled

    Abstract: No abstract text available
    Text: HT 78 HT 78 P 1 R W = S oH Diélectrique CONDENSATEURS HAUTE TENSION HIGH VOLTAGE CAPACITORS CARACTERISTIQUES GENERALES Température d’utilisation • HT 78 • HT 78 P Tg d à 1 kHz pour CR X 1,5 nF Tg d à 1 kHz pour CR ` 1,5 nF Résistance d'isolement pour CR X 0,22 µF


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HT 78 HT 78 P 1 CONDENSATEURS HAUTE TENSION HIGH VOLTAGE CAPACITORS Diélectrique CARACTERISTIQUES GENERALES Température d’utilisation • HT 78 • HT 78 P Tg d à 1 kHz pour CR X 1,5 nF Tg d à 1 kHz pour CR ` 1,5 nF Résistance d'isolement pour CR X 0,22 µF


    Original     		PDF

    433mhz RX 411

    Abstract: No abstract text available
    Text: TH71101 315/433MHz FSK/ASK Receiver Features Single-conversion superhet architecture for low external component count FSK demodulation with phase-coincidence demodulator Low current consumption in active mode and very low standby current Switchable LNA gain for improved dynamic range


    Original     		PDF TH71101 315/433MHz 32-pin CAA-000 TH71101ENE-CAA-000-RE ISO14001 Jun/13 433mhz RX 411

    MB15H156

    Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
    Text: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully


    Original     		PDF MB15H156 MB15H156 564MHz, 456MHz LCC-32P-M08) LCC-32P-M08 -110dBm 456MHz) 128MHz) XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent

    Untitled

    Abstract: No abstract text available
    Text: RF9938             • CDMA/TDMA/DCS1900 PCS Systems • BPSK Modulation • PHS 1500/ WLAN 2400 Systems • Micro-Cell PCS Base Stations • General Purpose Upconverter • Portable Battery Powered Equipment    


    Original     		PDF RF9938 CDMA/TDMA/DCS1900 RF9938

    SIGMA as 226

    Abstract: db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2
    Text: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high


    Original     		PDF AMMP-5618 AMMP-5618 sel18-TR1 AMMP-5618-TR2 5989-1994EN SIGMA as 226 db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2

    ta 8659 an

    Abstract: 172112
    Text: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high


    Original     		PDF AMMP-5618 5989-3210EN 5989-3545EN ta 8659 an 172112

    NTE102A

    Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium

    NTE102A

    Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
    Text: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE102A NTE103A 300mA 500mA, NTE102A germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power

    datasheet 1am

    Abstract: equivalent of 1AM K4070 1AM sot 23
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration


    Original     		PDF MMBT3904 OT-23 350mWatts OT-23 30Vdc, IC/10 datasheet 1am equivalent of 1AM K4070 1AM sot 23

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration


    Original     		PDF MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10

    k4070

    Abstract: MMBT3904
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23


    Original     		PDF MMBT3904 OT-23 350mWatts OT-23 30Vdc, IC/10 k4070 MMBT3904

    k4070

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration


    Original     		PDF MMBT3904 OT-23 350mWatts OT-23 30Vdc, IC/10 k4070

    BFP420 application notes 900MHz

    Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
    Text: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a


    Original     		PDF BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400

    1am sot 23

    Abstract: MARKING 1AM
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General


    Original     		PDF MMBT3904 OT-23 350mWatts 30Vdc, 10mAdc, 50mAdc, IC/10 1am sot 23 MARKING 1AM

    Untitled

    Abstract: No abstract text available
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23


    Original     		PDF MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10

    RF2311

    Abstract: No abstract text available
    Text: RF2311 4 GENERAL PURPOSE AMPLIFIER Typical Applications • General Purpose High Bandwidth Gain Blocks • Broadband Test Equipment • Final PA for Medium Power Applications • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description


    Original     		PDF RF2311 RF2311 1600MHz.

    2700 microfarad capacitor

    Abstract: capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY
    Text: General Data For Capacitors EIA CAPACITAN CE C O D E V S M ICRO-PICO-NANO-FARAD NF (MF) (PF) EIA C O D E MICRO-FARAD PICO-FARAD NANO-FARAD 1.5 .0015 1R5 2R2 2.2 .0022 3R3 3.3 .0033 4.7 .0047 4R7 6R8 6.8 .0068 10 .01 100 150 15 .015 .022 22 220 250 25 .025


    OCR Scan     		PDF 10OOpF 1000nF 000nF 000uF 2700 microfarad capacitor capacitor 220 microfarad capacitor 10 microfarad 4700 microfarad 25 V 1000 microfarad 35 v capacitor 470 microfarad 15000 microfarad capacitor 101 Ceramic Disc Capacitors 6800 microfarad capacitor picofarad .LY

    2200 microfarad electrolytic capacitor

    Abstract: capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor
    Text: General Data For Capacitors EIA CAPACITANCE CODE VS MICRO-PICO-NANO-FARAD <MF PF) (NF) EIA CODE MICRO-FARAD PICO-FARAD NANO-FARAD 1R5 1.5 .0015 2R2 2.2 .0022 3R3 3.3 .0033 4R7 4.7 .0047 6R8 6.8 .0068 100 10 .01 150 15 .015 220 22 .022 250 25 .025 330 33


    OCR Scan     		PDF 220nF 1000pF 10jiF 2200 microfarad electrolytic capacitor capacitor 220 microfarad capacitor 470 microfarad 100 microfarad electrolytic capacitor 2700 microfarad capacitor capacitor, .001 microfarad 0.1 microfarad electrolytic capacitor 3.3 microfarad electrolytic capacitor 6800 microfarad capacitor 22000 microfarad capacitor

    KTN222S

    Abstract: KTN2222AS KTN2222S marking cox
    Text: ¿s\ I n ter n a tio n a l W S em ico n d u cto r, In c . KTN2222S/AS E P IT A X IA L P L A N A R NPN T R A N S IS T O R GENERAL PURPOSE APPLICATAIONS SWITCHING APPLICATIONS SOT-23 FEATURES • Low Leakage C urrent: lCEX = 10 mA Max, V CE = 60 Volts, V EB 0FF =3 V o lts


    OCR Scan     		PDF KTN2222S/AS KTN2222S KTN2222AS OT-23 KTN2222AS TD0037fl KTN222S marking cox

    pin diodes radiation detector

    Abstract: 18E DBM 125HFBD 125LFBD 175HFBD 175LFBD 225HFBD 225LFBD 275HFBD 275LFBD
    Text: CUSTOM COMPONENTS •'rWk ~3I 1ÖE D INC ■ 257Ö555 OGOQOLfl 3 ■ DETECTOR DIODES r/mws=iam i M"i I % GERMANIUM FEATURES: • • • • • • • Part Number 'p luA Range pF RV VF2 RS CT VR1 (Max.) MV (Typ.) MV (Typ.) Q(Typ.) a (Typ.) K3 mV/mW TSS4


    OCR Scan     		PDF 125LFBD 125HFBD 175LFBD 175HFBD 225LFBD 225HFBD 275LFBD 275HFBD 325LFBD 325HFBD pin diodes radiation detector 18E DBM

    MPS6512S

    Abstract: No abstract text available
    Text: MPS6512S NPN SILICON TRANSISTOR TO-92A DESCRIPTION MPS6512S is NPN silicon planar transistors designed for general purpose amplifier applications. 0 4 .6 8 0 . 18 4 .6 ( 0 . 18 ) 3.58 ( 0 . 14 ) 2.54 12 , 7 ( 0 .5 ) ( 0 . 1) MIN. BOTTOM VIEW —11— 0 .4 5 ( 0 ,018 )


    OCR Scan     		PDF MPS6512S O-92A 100mA 350mW 10fiA 20MHz 10Kohm