Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NEW ENGLAND SEMICONDUCTOR Search Results

    NEW ENGLAND SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEW ENGLAND SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Contact Us New England Semiconductor manufactures a wide variety of Discrete Semiconductor Devices in its modern facility in Lawrence, Massachusetts. We are ISO 9001 and MIL-PRF-19500 JAN"S" level qualified company. Our Mission New England Semiconductor is dedicated to supplying high reliability and quality solid state discrete


    Original     		PDF MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: JANS Program New Product Announcement New England Semiconductor announces its New Line of Junction Field Effect Transistors JFET's These devices will be available as JAN, JANTX, JANTXV as well as commercial. Available families are: MIL-PRF-19500/375 - 2N3821, 2N3822, 2N3823


    Original     		PDF MIL-PRF-19500/375 2N3821, 2N3822, 2N3823 MIL-PRF-19500/385 -2N4856, 2N4857, 2N4858, 2N4860, 2N4861

    Untitled

    Abstract: No abstract text available
    Text: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England Abstract This paper will present a new power semiconductor


    Original     		PDF

    parallel connection of MOSFETs

    Abstract: No abstract text available
    Text: DirectFET  - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth, International Rectifier, Oxted, Surrey. England As Presented at PCIM 2001 Abstract This paper will present a new power semiconductor


    Original     		PDF

    tcscs

    Abstract: scanlogic sl11 XC62HR3302MR SL11T 1N52288 3.3v smd regulator SL11-USB SL11 usb 2N2222A 48-PIN
    Text: SL11/T USB Controllers Technical Reference ScanLogic Corporation 8 New England Executive Park Burlington, MA 01803 http://www.scanlogic.com ScanLogic Corporation SL11/T USB Controller Specification CONVENTIONS .5


    Original     		PDF SL11/T SL11/T tcscs scanlogic sl11 XC62HR3302MR SL11T 1N52288 3.3v smd regulator SL11-USB SL11 usb 2N2222A 48-PIN

    tcscs

    Abstract: 1N52288 SL811HS scanlogic sl11 XC62HR3302MR SL11H sl11 usb pcmcia to usb controller 48-PIN SL11HT
    Text: SL11H/T USB Host/Slave Controllers Technical Reference ScanLogic Corporation 8 New England Executive Park Burlington, MA 01803 http://www.scanlogic.com ScanLogic Corporation SL11H/T USB Host/Slave Controller Specification CONVENTIONS .5


    Original     		PDF SL11H/T SL11H/T tcscs 1N52288 SL811HS scanlogic sl11 XC62HR3302MR SL11H sl11 usb pcmcia to usb controller 48-PIN SL11HT

    44CR80S

    Abstract: Smart 700 SIEMENS ford siemens 1120 siemens relays Siemens SLE "electronic purse"
    Text: SPECTRUM North Tyneside wafer fab forges ahead: From ships to chips The new £1.1 billion $1.8 billion microchip plant being built by Siemens Microelectronics Ltd at North Tyneside in northeast England reached a new milestone on February 15 with the first integrated run on


    Original     		PDF 16M-bit 44CR80S Smart 700 SIEMENS ford siemens 1120 siemens relays Siemens SLE "electronic purse"

    Untitled

    Abstract: No abstract text available
    Text: 2N6259 ^ 1 W ^NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: * ^CBO. * ^ CEO.


    OCR Scan     		PDF 2N6259

    Untitled

    Abstract: No abstract text available
    Text: 2N6421 ^1 P *NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: • • VcBO_. VCE0 sus . • V e BO.


    OCR Scan     		PDF 2N6421 O-213AA

    NSF350

    Abstract: NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011 NSF61011A
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360


    OCR Scan     		PDF T0204 NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF350 NSF60708

    NSF350

    Abstract: 372M NSF60708 NSF60808 NSF60809 NSF60812 NSF60910 NSF60911 NSF60913 NSF61011
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360


    OCR Scan     		PDF T0204 NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF350 372M NSF60708

    2950

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-3 PACKAGE T0204 TO-3 DEVICE TYPE NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 NSF60708 NSF60709 NSF60712 NSF60603 NSF60604 NSF60605 NSF60606 NSF605023 NSF460 NSF360


    OCR Scan     		PDF T0204 NSF61011A NSF61011 NSF61013 NSF60910 NSF60911 NSF60913 NSF60808 NSF60809 NSF60812 2950

    n -channel power mosfet

    Abstract: NESM150 02ur MOSFET Parameters 3421A
    Text: Í? 14E F ^ NESM150 MW*NEW ENGLAND SEMICONDUCTOR POWER MOSFET NCHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted


    OCR Scan     		PDF NESM150 NESM150 XM46-1158 n -channel power mosfet 02ur MOSFET Parameters 3421A

    NES6764

    Abstract: XM46-1158 3421A
    Text: Í? 14E F ^ NES6764 MW*NEW ENGLAND SEMICONDUCTOR POWER MOSFET NCHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted


    OCR Scan     		PDF NES6764 NES6764 XM46-1158 3421A

    NSF205023

    Abstract: NSF20504 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 NSFM440 NSFM450
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-254 PACKAGE DEVICE TYPE TO-254 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 Also NSFM440 available in NSFM450 Z Pack NSFM460 NSF20504 NSF205023 NSF20607 NSF20606 NSF206036 NSF20714 NSF20712 NSF20812 NSF20814


    OCR Scan     		PDF O-254 O-254 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 NSFM440 NSFM450 NSF205023 NSF20504

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients


    OCR Scan     		PDF 1N6036A 1N6072A 1N6036A 1N6072A

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-254 PACKAGE TO-254 DEVICE TYPE NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 Also NSFM440 available in NSFM450 Z Pack NSFM460 NSF20504 NSF205023 NSF20607 NSF20606 NSF206036 NSF20714 NSF20712 NSF20812 NSF20814


    OCR Scan     		PDF O-254 NSFM150 NSFM240 NSFM250 NSFM340 NSFM350 NSFM360 NSFM440 NSFM450

    HA 1370

    Abstract: NFD410
    Text: NFD410 ^ M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage Vas Continuous Drain Current


    OCR Scan     		PDF NFD410 075R- 8-860-rain-Source HA 1370 NFD410

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs ?\ME5 ^ NES6764 M W*NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


    OCR Scan     		PDF NES6764 S6764

    U3700

    Abstract: No abstract text available
    Text: Back to FETs ?\ME5 ^ NESM150 M W*NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL POWER MOSFET Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted


    OCR Scan     		PDF NESM150 U3700

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients


    OCR Scan     		PDF 1N6036A 1N6072A 1N6036A 1N6072A DO-13

    TO-18 amps pnp transistor

    Abstract: BC107 BC108
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029


    OCR Scan     		PDF T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 15KW17A thru 15KW280A 15,000 WATT TRANSIENT VOLTAGE SUPPRESSOR AVAILABLE IN VOLTAGES FROM 19.9V THRU 327.5V TheNESlSKW series of transient suppressor diodes are designed to protect electronic equipment from failure due to high voltage transients. Because of


    OCR Scan     		PDF 15KW17A 15KW280A