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    NEC SILICON EPITAXIAL POWER TRANSISTOR Search Results

    NEC SILICON EPITAXIAL POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NEC SILICON EPITAXIAL POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier

    2SD596A

    Abstract: transistor DV3 D1788 2SB624
    Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)


    Original     		PDF 2SD596A 2SB624 2SD596A transistor DV3 D1788

    NEC B536

    Abstract: 2SD382 2SB536 NEC 2sD381 b536 2SB537 B-536 nec b 537 2SB536 b537
    Text: NEC SILICON POWER TRANSISTORS HfCTR0N“ 2SB536,2SB537/2SD381,2SD382 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING PNP/NPN SILICON EPITAXIAL TRANSISTOR DESCR IPTIO N The 2SB536, 2SB537 and 2SD381, 2SD382 are silicon epitaxial transistors intended for a wide variety of


    OCR Scan     		PDF 2SB536 2SB537/2SD381 2SD382 2SB536, 2SB537 2SD381, 2SD382 537/2S 2SB536/2SD381 NEC B536 2SB536 NEC 2sD381 b536 B-536 nec b 537 b537

    LDB 107

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    OCR Scan     		PDF NEL2000 P10381EJ3V1DS00 LDB 107

    SOT-89 FJ

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB799 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SB799 2SB799 2SD1000 SOT-89 FJ

    5490A

    Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package


    OCR Scan     		PDF 2SB798 2SD999 5490A B 1359 970-900 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89

    2SC1449

    Abstract: S10ms
    Text: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.


    OCR Scan     		PDF 2SC1449 2SC1449 S10ms

    2SA1463

    Abstract: 2SC3736 MEI-1202 MF-1134
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES


    OCR Scan     		PDF 2SA1463 2SA1463 2SC3736 MEI-1202 MF-1134

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1005 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SD1005 2SD1005 2SB804

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE _ _ _ _ _ _ BCX54,BCX55,BCX56 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The B C X54 to 56 are designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits.


    OCR Scan     		PDF BCX54 BCX55 BCX56 BCX51

    ta69

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB798 2SB798 2SD999 ta69

    NTC2908

    Abstract: No abstract text available
    Text: NEC SILICON POWER TRANSISTOR NTC2908 ELECTRON DEVICE HIGH SPEED HIGH CURRENT SWITCHING NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION Suitable fo r sw itching regulator, DC-DC converter and ultrasonic appliance applications. FEATURES PACKAGE DIMENSIONS in millimeters inches


    OCR Scan     		PDF NTC2908 NTC2908

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS


    OCR Scan     		PDF 2SB800 2SB800 2SD1001

    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


    OCR Scan     		PDF 00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014

    2SB628

    Abstract: 2s0608 2SD608
    Text: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE _ _ _ Ä Ä 2SB628/2SD608 AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SW ITCHING PN P/NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The in m illim e te rs inches fo r 2SB628/2SD 608 are PNP/NPN


    OCR Scan     		PDF 2SB628/2SD608 2SB628 2SD608 2S0608

    2SA1173

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SA1173 is designed fo r audio frequency pream plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SA1173 2SC2780 2SA1173

    2SB624

    Abstract: 2SD596
    Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2


    OCR Scan     		PDF 2SB624 2SB624 2SD596 NECTOKJ22686

    700 v power transistor

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOF 2SD 1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1001 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. F E A TU R E S • World Standard M iniature Package


    OCR Scan     		PDF 2SD1001 2SD1001 2SB800 700 v power transistor

    92-0151

    Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
    Text: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8


    OCR Scan     		PDF 2SB744 44A/2SD794 2SB744A 2SD794 2SD794A i0942 92-0151 2SB744 nec TI31 S405A T460 1444A

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pream plifier application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M iniature Package


    OCR Scan     		PDF 2SC2780 2SC2780

    2SD780

    Abstract: 7802S
    Text: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe­ in m illim eters 2 .8 + 0 2


    OCR Scan     		PDF 2SD780 2SD780A 2S0780, 2SD780A 2SB736, 2SB736A Diss50 --84M 7802S

    2SA1173

    Abstract: MF-1134 2SC2780 MEI-1202 TEI-1202 EL1202 MARKING J1A
    Text: DATA SHEET • NEC SILICON TRANSISTOR 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S C 2780 is designed fo r audio frequency pream plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


    OCR Scan     		PDF 2SC2780 2SC2780 140pace 2SA1173 MF-1134 MEI-1202 TEI-1202 EL1202 MARKING J1A

    NTD407

    Abstract: No abstract text available
    Text: NEC SILICON DARLINGTON POWER TRANSISTOR ELECTRON DEVICE NTD407 LOW FREQUENCY AMPLIFIER AND LOW SPEED SW ITC H IN G NPN SILICON EPITAXIAL MESA DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r hum m er driver, pulse m o to r driver and relay driver applications.


    OCR Scan     		PDF NTD407 NTD407

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SD1005 2SD1005 2SB804