Package Marking C2s
Abstract: Mini-Mold PPC1675G PPC1676G PPC1688G PPC2791 PPC2791TB PPC2791TB-E3 PPC2792 PPC2792TB
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2791TB, PPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The PPC2791TB and PPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for
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PPC2791TB,
PPC2792TB
PPC2791TB
PPC2792TB
PPC1675G,
PPC1676G
Package Marking C2s
Mini-Mold
PPC1675G
PPC1688G
PPC2791
PPC2791TB-E3
PPC2792
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marking R33
Abstract: 2SC4227 2SC4227-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4227
2SC4227
S21e2
2SC4227-T1
marking R33
2SC4227-T1
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2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4228
2SC4228
S21e2
2SC4228-T1
2SC4228-T1
TRANSISTOR R44
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TFL08
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2126TB
PG2126TB
TFL08
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PC2747TB
Abstract: PDC800M
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB,µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.
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PC2747TB,
PC2748TB
PC2748TB
PC2747TB
PDC800M
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PPC8128TA
Abstract: PPC8128TA-E3 PPC8128TB PPC8151TA PPC8151TA-E3 PPC8152TA PPC8152TA-E3
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PPC8128TA, PPC8151TA, PPC8152TA SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer
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PPC8128TA,
PPC8151TA,
PPC8152TA
PPC8151TA
PPC8152TA
PPC8128TA
PPC8128TA-E3
PPC8128TB
PPC8151TA-E3
PPC8152TA-E3
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NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
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2SC4954
2SC4954-T1
NEC 2581
nec 258
2581 NEC
574 nec
2SC4954
2SC4954-T1
2SC4954-T2
26480
30460
NEC 821
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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d59 smd 6-pin
Abstract: minimold SMD IC MARKING GP transistor C1z SMD MARKING GP TRANSISTOR C2H marking
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for
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PC2762TB,
PC2763TB,
PC2771TB
PC2763TB
PC2771TB
PC2762T,
d59 smd 6-pin
minimold
SMD IC MARKING GP
transistor C1z
SMD MARKING GP TRANSISTOR
C2H marking
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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grm39ck1r5c50
Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2126TB
PG2126TB
grm39ck1r5c50
TFL0816-12N
TFL0816-2N2
TFL0816-8N2
GRM39CH101J50
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MARKING G1V
Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
MARKING G1V
marking G1Y G1V
GRM39CH020C50PB
RR0816P-102-D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
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6pin 1052
Abstract: uPC1688 PC1676G 6-pin ic 237 C3H marking marking C2s
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2791TB, µPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The µPC2791TB and µPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for Among the 6-pin mini/super minimold amplifiers, µPC2791TB and µPC2792TB have unique pin
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PC2791TB,
PC2792TB
PC2791TB
PC2792TB
PC1675G,
PC1676G
PC1688G.
10GHz
6pin 1052
uPC1688
6-pin ic 237
C3H marking
marking C2s
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marking C1s
Abstract: PDC800M NEC C1R 6-PIN 907 09 03 000 6181
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB, µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.
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PC2747TB,
PC2748TB
PC2748TB
marking C1s
PDC800M
NEC C1R
6-PIN 907
09 03 000 6181
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marking C1s
Abstract: PC2747 SUPER CAPACITOR BASED CIRCUIT MPC2747TB-E3
Text: PRELIMINARY DATA SHEET_ M F f ~ / BIPOLAR ANALOG INTEGRATED CIRCUITS / //PC2747TB, /¿PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /iPC2747TB, /¿PC2748TB are silicon monolithic integrated circuits designed as amplifier, for mobile
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uPC2747TB
uPC2748TB
/iPC2747TB,
PC2748TB
/JPC2747T,
//PC2748T
PC2747TB,
iPC2748TB
marking C1s
PC2747
SUPER CAPACITOR BASED CIRCUIT
MPC2747TB-E3
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transistor NEC D 588
Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
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2SC3356
2SC3356
transistor NEC D 588
IC nec 555
nec d 588
marking 544 low noise amplifier
ZS12
nec 501 t
nec marking 2sc3356
R25 2sc3356
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c2792
Abstract: marking C2s UC1676 2791t
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2791TB, juPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The \ i PC2791TB and /¿PC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer am plifier for
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uPC2791TB
uPC2792TB
PC2791TB
PC2792TB
tPC2791TB
2792TB
/PC2791TB
/PC2792TB
PC1675G,
PC1676G
c2792
marking C2s
UC1676
2791t
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2SA812
Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters 2.8 ± 0.2 -8 Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. Vce = -6.0 V, Ic = -1 .0 mA
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2SA812
2SA812
2SC1623
MEI-1202
TC-5166
ic 926
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mmic marking c1b
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2791TB, uPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The ¿iPC2791TB and ¿iPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for
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uPC2791TB
uPC2792TB
iPC2791TB
iPC2792TB
iPC1675G,
iPC1676G
mmic marking c1b
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B52 transistor
Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe in millimeters
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2SB736,
2SB736A
2SB736A
2SD780,
2SD780A
2SB736
J22686
--84M
B52 transistor
Bw5 transistor
MARKING B52
transistor b54
2SD780
2SB736AB51
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is
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uPC3210TB
PC3210TB
/iPC3210TB
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2SD596
Abstract: D1298 SSA250 transistor dv4
Text: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom mended for hybrid integrated circuit and other applications.
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2SD596
2SD596
D1298
SSA250
transistor dv4
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