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    NEC GATE ARRAY Search Results

    NEC GATE ARRAY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    NEC GATE ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    nec d 882 p transistor

    Abstract: TF-680 transistor NEC D 882 p DF QB L302
    Text: QB-8 3.3-Volt, 0.44-Micron Gate Arrays NEC Electronics Inc. Preliminary Description April 1996 Figure 1. 672-pin BGA NEC’s 3.3-volt QB-8 family consists of ultra-highperformance, submicron gate arrays targeted for applications requiring high speeds and low power


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    PDF 44-Micron 672-pin A11111EU1V0DS00 nec d 882 p transistor TF-680 transistor NEC D 882 p DF QB L302

    uPD65801

    Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
    Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device


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    PDF PD65800 uPD65801 UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    nec naming rule

    Abstract: L302
    Text: NEC Electronics Inc. UNIVERSAL PCI SERIES MIXED-VOLTAGE 0.6-MICRON CMOS GATE ARRAYS March 1995 Preliminary Description Figure 1. Application Example NEC's Universal PCI Series gate array family provides designers with the flexibility and performance required to


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    F611

    Abstract: L302 L611
    Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    PDF 35-micron) A11169EU1V0DS00 F611 L302 L611

    A1742

    Abstract: nec gate drive panel lcd nec gate drive panel THOMSON lcd 40 pin diagram lvds LCD panel timing control PD66208 nec b 708 nec LQFP-208
    Text: New generation Gate Array with large scale embedded SRAM CMOS-12M CMOS-12M is NEC Electronics’ new generation Gate Array with embedded high-density SRAMs and analog PLLs. This product offers low price, quick design turnaroundtime and quick manufacturing turnaroundtime.


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    PDF CMOS-12M CMOS-12M PD66201 A1742 nec gate drive panel lcd nec gate drive panel THOMSON lcd 40 pin diagram lvds LCD panel timing control PD66208 nec b 708 nec LQFP-208

    upd71055

    Abstract: No abstract text available
    Text: – Advance Information – Gate Array Solutions µPD71055-compliant Programmable Parallel Interface Following the phase-out of the popular µPD71055 programmable parallel interface unit standard product, NEC Electronics can offer a functional substitute based upon low-cost Gate Array ASIC technologies.


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    PDF PD71055-compliant PD71055 EPMC-PU-0044-1 upd71055

    F611

    Abstract: No abstract text available
    Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low


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    PDF 35-micron) A10616EU1V0DS00 F611

    CMOS-9HD

    Abstract: NEC stacked CSP 2000 L302 FPBGA NEC 2000 stacked
    Text: NEC Electronics Inc. CMOS-9HD 3.3-Volt, 0.35-Micron drawn CMOS Gate Array Preliminary Description January 1998 Figure 1. Tape BGA and Chip Size Package NEC's CMOS-9HD, density-enhanced, 0.35 µm gate array family delivers a complete, low-cost answer to modern-day


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    PDF 35-Micron A12811EU3V0DS00 CMOS-9HD NEC stacked CSP 2000 L302 FPBGA NEC 2000 stacked

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


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    uPD65801

    Abstract: uPD65800 UPD65804
    Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device


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    PDF H27SSS uPD65801 uPD65800 UPD65804

    nec d 588

    Abstract: nec naming rule nec product naming rule NEC CMOS-4
    Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required


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    PDF 35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. CMOS-8LH 3.3-V olt, 0.5-M icron CMOS G ate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high perform ance, sub-m icron gate arrays, targeted for


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    PDF 35-micron) b4275E5 0Qb6651

    NEC C51A

    Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
    Text: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced


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    PDF iMH752S uPB6100 uPB6101 uPB6102 uPB6103 b457S55 /PB610 //PB6100 AIPB6101 AiPB6102 NEC C51A nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    PDF 65-MICRON xPD65800 D65806 9215K1

    Untitled

    Abstract: No abstract text available
    Text: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power


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    PDF 672-pin

    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


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    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


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    PDF 65-micron D65806

    Untitled

    Abstract: No abstract text available
    Text: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays


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    PDF NECES001 CP20K RAM8x16* RAM16x16* RAM32x16* RAM8x32* 16x32* RAM32x4* RAM64x4*

    Untitled

    Abstract: No abstract text available
    Text: five 10 1992 NEC JJPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.


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    PDF JJPD434000 PD434000 288-w 32-pin

    f422

    Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
    Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip


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    PDF uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    PDF IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425