Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NEC GA FET MARKING Z Search Results

    NEC GA FET MARKING Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    NEC GA FET MARKING Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking

    NEC Ga FET marking L

    Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
    Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .


    Original     		PDF 2SJ209 2SJ209, NEC Ga FET marking L Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    ps7200

    Abstract: SOP4 dip8 relay NEC Ga FET marking L NEC PS71 ps710 PS7221 solid state mini relay automotive of 4-pin DIP switch 9910 dip8
    Text: N E C E l ec t r o n i c s SOLI D STAT E R E L AY S — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include


    Original     		PDF Singl4-6720 CL-610A ps7200 SOP4 dip8 relay NEC Ga FET marking L NEC PS71 ps710 PS7221 solid state mini relay automotive of 4-pin DIP switch 9910 dip8

    The Japanese Transistor Manual 1981

    Abstract: NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    transistor NEC D 882 p

    Abstract: nec d 882 p transistor NE42484C transistor NEC D 586 NE42484C-T1 2608 surface mount transistor NEC D 586 NE42484 28609
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


    OCR Scan     		PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a

    IR 18779

    Abstract: NEC Ga FET marking L nec gaas fet marking
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AM PLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise fig u re & High a sso cia te d gain • G ate le n g th : Lg = 0.3 /¿m • G ate w id th : Wg NF = 1.6 dB TYP ., G a = 9.0 dB TYP. at f = 12 G H z


    OCR Scan     		PDF NE76084 E76084-T1 IR 18779 NEC Ga FET marking L nec gaas fet marking

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    NE334S01

    Abstract: transistor C 2240 K 1358 fet transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B IR30-00 transistor C 2240 K 1358 fet transistor

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V

    Untitled

    Abstract: No abstract text available
    Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		PDF NE429M01 NE429M01 NE429M01-T1 Fin/50

    Nec b 616

    Abstract: 2SK1581
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S K 1 581 N-CHAIMNEL MOS FET FOR SWITCHING


    OCR Scan     		PDF 2SK1581, Nec b 616 2SK1581

    transistor NEC D 822 P

    Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		PDF NE425S01 NE425S01 NE425S01-T1 transistor NEC D 822 P nec gaas fet marking NEC Ga FET transistor ne425s01

    nec a 634

    Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE325S01 NE325S01 NE325S01-T1 nec a 634 Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    Diode LT 023

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR J 2SJ357 P-CHANNEL M OS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm} T h e 2 S J 3 5 7 is a P -c h a n n e l ve rtica l M O S F E T that can be u s e d a s a s w it c h in g ele m e n t. T h e 2 S J 3 5 7 can be


    OCR Scan     		PDF 2SJ357 2SJ357 Diode LT 023

    NEC Ga FET marking A

    Abstract: NE25139T1U74 NE25139U NE25139T1U71
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		PDF NE25139 Vi32S 90CIM NE251 NE25139T1 NE25139U74 24-Hour NEC Ga FET marking A NE25139T1U74 NE25139U NE25139T1U71

    nec D 8049 C

    Abstract: LA 4127 ex 3863 nec 38018 ST 7702
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW C O S T M IN IA TU RE P L A S T IC P A C K A G E (S O T - 343 ) LOW N O IS E F IG U R E : 0.6 dB typica l at 2 G H z m T> <


    OCR Scan     		PDF NE38018 T-343) NE38018 NE38018-TI-67 NE38018-TI-68 nec D 8049 C LA 4127 ex 3863 nec 38018 ST 7702

    NE3401B

    Abstract: marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD TJ, < Ö C '<D <3 TJ £


    OCR Scan     		PDF OT-343) NE34018 NE34018 thTI-63 NE34018-TI-64 9SD54 24-Hour NE3401B marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093