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    NEC Electronics Group NE38018-T1

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    Bristol Electronics NE38018-T1 462 3
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    Quest Components NE38018-T1 1,230
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    NE38018-T1 1,541
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    NE38018-T1 359
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    NEC Corp NE38018-T1

    JFET Transistor, N-Channel, TSOP
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    Quest Components NE38018-T1 168
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    NEC Electronics Group NE38018T1

    L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA NE38018T1 6,341
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    NE38018 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE38018 NEC FET Transistor, L to S BAND LOW NOISE AMPLIFIER, N-CHANNEL HJ-FET Original PDF
    NE38018 NEC Semiconductor Selection Guide Original PDF
    NE38018 NEC GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF
    NE38018 NEC L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE38018-T1 NEC FET Transistor, L to S BAND LOW NOISE AMPLIFIER, N-CHANNEL HJ-FET, Tape And Reel Original PDF
    NE38018-T1 NEC L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE38018-T1-67 NEC GaAs HJ-FET L to S band low noise amplifier. Idss range 40-90 mA. Original PDF
    NE38018-T1-68 NEC GaAs HJ-FET L to S band low noise amplifier. Idss range 70-170 mA. Original PDF
    NE38018-T2 NEC L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET Original PDF
    NE38018-TI-67 NEC GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF
    NE38018-TI-68 NEC GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF

    NE38018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 3807 transistor

    Abstract: NE38018 NE38018-TI-67 NE38018-TI-68
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz


    Original     		PDF NE38018 OT-343) NE38018 NE38018-TI-67 NE38018-TI-68 24-Hour C 3807 transistor NE38018-TI-67 NE38018-TI-68

    NE38018 V68

    Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
    Text: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz


    Original     		PDF NE38018 NE38018-T1 NE38018-T2 NE38018 V68 transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE38018 CGD_PKG 0.003pF Q1 LG_PKG LG 0.55nH 0.7nH GATE LD LD_PKG 0.87nH 0.1nH CDS_PKG 0.15pF DRAIN CDX 0.04pF LS 0.28nH CCG_PKG 0.12pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters


    Original     		PDF NE38018 003pF 1e-14 1e-12 1e-11 2e-12 145e-12 24-Hour

    NE38018 V68

    Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
    Text: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz


    Original     		PDF NE38018 NE38018-T1 NE38018 V68 NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500

    150J10

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz


    Original     		PDF OT-343) NE38018 NE38018 NE38018-TI-67 NE38018-TI-68 24-Hour 150J10

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    NE662M04

    Abstract: NE34018 NE38018 NE334S01 HEMT 36 ghz transistor Bipolar HJ Crystal Radio UPB1007K
    Text: GPS/Satellite Radio NEW! UPB1007K Integrated GPS Receiver IC Key Features Key Specifications • Uses single 3V power supply • 3.0V VCC, 24mA typ I CC @ 3V • –45dBm max LO Leakage to RF Input • 70mW consumption • LNA Performance: 3dB NF typ, 15dB Gain,


    Original     		PDF UPB1007K 45dBm 16MHz 575GHz NE662M04 23GHz OT-343 NE662M04 NE34018 NE38018 NE334S01 HEMT 36 ghz transistor Bipolar HJ Crystal Radio

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    PD72001

    Abstract: upc1237 PD4722 UPD63724A PC1892 uPD72002-11 uPD72011 upc2576 PD4721 TFT256
    Text: CD-ROM版専 用 I C CD-ROM X13769XJ2V0CD00 06−1 専用 IC DSP • DSP（1/2） 品 名 インストラクション・サイクル ns µPD77016 µPD77018A µPD77019 µPD77019-013 30 16.7 16.7 16.7 固定小数点 固定小数点


    Original     		PDF X13769XJ2V0CD00 PD77016 PD77018A PD77019 PD77019-013 PD77110 PC667 14DIP PD72001 upc1237 PD4722 UPD63724A PC1892 uPD72002-11 uPD72011 upc2576 PD4721 TFT256

    NEc hemt

    Abstract: nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
    Text: California Eastern Laboratories APPLICATION NOTE AN1039 Optimizing LNA Performance for CDMA Application Using Nonlinear Simulator ABSTRACT CDMA DESIGN CONSIDERATIONS This application note will review the process by which designers can take advantage of the latest simulation tools such as


    Original     		PDF AN1039 NEc hemt nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    NE38018 V68

    Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D

    8029 l2

    Abstract: NE38018 V68 QB 2104 TRANSISTOR M 9639 transistor 8029 l2 circuit PT/7045-J-600 Si 4593 3563 1231 241 8726 ta 8739
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.55 dB typical at 2 GHz CD ~o m TJ HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz


    OCR Scan     		PDF OT-343) NE38018 NE38018 NE38018-TI-67 NE38018-TI-68 8029 l2 NE38018 V68 QB 2104 TRANSISTOR M 9639 transistor 8029 l2 circuit PT/7045-J-600 Si 4593 3563 1231 241 8726 ta 8739

    21134 015

    Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		PDF NE38018 NE38018-T1 NE38018-T2 21134 015 nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz


    OCR Scan     		PDF NE38018 NE38018-T1 NE38018-T2 Rn/50

    nec D 8049 C

    Abstract: LA 4127 ex 3863 nec 38018 ST 7702
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW C O S T M IN IA TU RE P L A S T IC P A C K A G E (S O T - 343 ) LOW N O IS E F IG U R E : 0.6 dB typica l at 2 G H z m T> <


    OCR Scan     		PDF NE38018 T-343) NE38018 NE38018-TI-67 NE38018-TI-68 nec D 8049 C LA 4127 ex 3863 nec 38018 ST 7702

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01