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    NEC 2222 Search Results

    NEC 2222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2222SQ-111JEC Coilcraft Inc General Purpose Inductor, 0.11uH, 5%, Air-Core, 2522, Visit Coilcraft Inc
    2222SQ-301GEB Coilcraft Inc General Purpose Inductor, 0.3uH, 2%, 1 Element, Air-Core, SMD, 4723, HALOGEN FREE, ROHS COMPLIANT Visit Coilcraft Inc
    2222SQ-221JEB Coilcraft Inc General Purpose Inductor, 0.22uH, 5%, Air-Core, 3922, Visit Coilcraft Inc
    2222SQ-271JEC Coilcraft Inc General Purpose Inductor, 0.27uH, 5%, Air-Core, 4622, Visit Coilcraft Inc
    2222SQ-111GEB Coilcraft Inc General Purpose Inductor, 0.11uH, 2%, Air-Core, 2522, Visit Coilcraft Inc

    NEC 2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC V30MX

    Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
    Text: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows


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    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    nec d 882 p transistor

    Abstract: TF-680 transistor NEC D 882 p DF QB L302
    Text: QB-8 3.3-Volt, 0.44-Micron Gate Arrays NEC Electronics Inc. Preliminary Description April 1996 Figure 1. 672-pin BGA NEC’s 3.3-volt QB-8 family consists of ultra-highperformance, submicron gate arrays targeted for applications requiring high speeds and low power


    Original     		PDF 44-Micron 672-pin A11111EU1V0DS00 nec d 882 p transistor TF-680 transistor NEC D 882 p DF QB L302

    uPD65801

    Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
    Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device


    Original     		PDF PD65800 uPD65801 UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    D78 NEC

    Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
    Text: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications


    Original     		PDF CB-C10 25-Micron CB-C10 A12504EU1V0DS00 D78 NEC spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M

    uPD95

    Abstract: nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431
    Text: NEC NEC Electronics Inc. CB-C8 0.5-Micron CMOS Cell-Based ASIC Design Manual March 1995 Document No. 70226-1 1995 NEC Electronics lnc./Printed in U.S.A. • b427525 ÜGÔ3304 bT3 ■ ft CONTENTS CHAPTER 1 GENERAL DESCRIPTION.


    OCR Scan     		PDF b427525 uPD95 nec 2561 equivalent transistor tba 222 SH NEC 2561 NEC open cad pwc NEC 2561* D 431

    transistor f422 equivalent

    Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
    Text: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996


    OCR Scan     		PDF A10927EU1V0UM00 A11040XEU1V0UM00 b427525 G064122 transistor f422 equivalent transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		PDF IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		PDF IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425

    CMOS-6A

    Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
    Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC


    OCR Scan     		PDF IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


    OCR Scan     		PDF 65-micron D65806

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


    OCR Scan     		PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys

    philips V30M

    Abstract: No abstract text available
    Text: CB-C8VX/VM 3-Volt, 0.5-M icron Cell-Based CMOS ASIC NEC NEC Electronics Inc. April 1996 Preliminary Figure 1. BGA Package Examples Description NEC's CB-C8VX/VM CMOS cell-based ASIC family facilitates the design of complete cell-based silicon system s composed of user-defined logic, complex


    OCR Scan     		PDF 35-micron b427525 philips V30M

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


    OCR Scan     		PDF 65-MICRON xPD65800 D65806 9215K1

    mx41 plc

    Abstract: 2-BIT Full-Adder CP20K NEC lcd inverter schematic NEC CP20K FPGA nec cmos CLS199 LDPC Decoder vhdl RAM64X4 9020 8pin
    Text: MAR i o 1983 C P20K 0 .8 -M IC R O N fp g a s NEC Electronics Inc. February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Program m able Gate Arrays


    OCR Scan     		PDF CP20K mx41 plc 2-BIT Full-Adder NEC lcd inverter schematic NEC CP20K FPGA nec cmos CLS199 LDPC Decoder vhdl RAM64X4 9020 8pin

    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


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    tm 1621

    Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
    Text: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI


    OCR Scan     		PDF BT6429 1SS123 BFR30 BFR92 BFS17 BFS18 BFS40 BFS41 BFS46 BFS85 tm 1621 BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


    OCR Scan     		PDF L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


    OCR Scan     		PDF iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK

    f422

    Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
    Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip


    OCR Scan     		PDF uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003

    FZL 101

    Abstract: CC78K0S RA78K0S
    Text: NEC Z L — t f — X • 7 8 K / 0 S - ? — > £HI S MX78K0S ÿ Î f Ê ' T / W X 78K/0S V U — X jt$ 4 ii- § U12938JJ1V0UM00 f | 1 j& September 1997 NS NEC C o rp o ra tio n 1997 z l T 'J — ) I s O S soi. M -m W ik - ¿6 68 - Z8 — SSf^SSÛJSO


    OCR Scan     		PDF MX78K0S U12938JJ1V0UM00 FZL 101 CC78K0S RA78K0S

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


    OCR Scan     		PDF b4E75S5 QQ3T701 nPD658xx bv0T 658X