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    NE713 Search Results

    NE713 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE713 NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71300 NEC Semiconductor Selection Guide Original PDF
    NE71300 NEC Low noise L to K-band GaAs MESFET. Idss 20 to 120 mA. Original PDF
    NE71300-AZ NEC FET Transistor: Low Noise L To K-Band Gaas MESFET Original PDF
    NE71300L NEC Low noise L to K-band GaAs MESFET. Idss 80 to 120 mA. Original PDF
    NE71300-L NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71300-L-AZ NEC FET Transistor: L to Ku BAND LOW NOISE AMPLIFIER: N-CHANNEL GaAs MES FET Original PDF
    NE71300M NEC Low noise L to K-band GaAs MESFET. Idss 50 to 80 mA. Original PDF
    NE71300-M NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71300N NEC Low noise L to K-band GaAs MESFET. Idss 20 to 50 mA. Original PDF
    NE71300-N NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71300-N-AZ NEC FET Transistor: L to Ku BAND LOW NOISE AMPLIFIER: N-CHANNEL GaAs MES FET Original PDF
    NE71383B NEC Semiconductor Selection Guide Original PDF
    NE71383B NEC L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE71383B-AZ NEC FET Transistor: L to Ku BAND LOW NOISE AMPLIFIER: N-CHANNEL GaAs MES FET Original PDF

    NE713 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NE71300 L NONLINEAR MODEL SCHEMATIC LD DRAIN 0.36nH Q1 LG GATE 0.36nH LS 0.01nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -2.04 RG 6 time seconds VTOSC RD 2 capacitance farads ALPHA 2.5 RS 2 inductance


    Original     		NE71300 3e-12 6e-12 15e-12 55e-12 04e-12 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE71383B CGD_PKG 0.001pF LD LD_PKG 0.28nH 0.26nH RD_PKG DRAIN RG_PKG GATE 1 ohm Q1 LG_PKG 0.32nH 0.4 ohms LG 0.14nH CCD_PKG 0.1pF LS_PKG 0.04nH CCG_PKG 0.1pF RS_PKG 0.02 ohms CSG_PKG CSD_PKG 0.01pF 0.01pF SOURCE FET NONLINEAR MODEL PARAMETERS 1


    Original     		NE71383B 001pF 3e-12 6e-12 25e-12 5e-12 04e-12 24-Hour PDF

    L to Ku Band Low Noise GaAs MESFET

    Abstract: NE71383B NE71383
    Text: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm


    Original     		NE71383B NE71383B 24-Hour L to Ku Band Low Noise GaAs MESFET NE71383 PDF

    6E12

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE71300 N LD SCHEMATIC DRAIN 0.36nH Q1 LG GATE 0.36nH LS 0.02nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -1.04 RG 6 time seconds VTOSC RD 2 capacitance farads ALPHA 4.5 RS 2 inductance


    Original     		NE71300 3e-12 6e-12 15e-12 5e-12 04e-12 24-Hour 6E12 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE


    Original     		NE71300 NE71300 NE71300N NE71300M NE71300L 24-Hour PDF

    73E-12

    Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE


    Original     		NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour 73E-12 20771 NE71300L NE71300M NE71300N lg 8838 LS 7642 PDF

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION


    Original     		NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B PDF

    NE71300

    Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION


    Original     		NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour NE71300L NE71300M NE71300N 0460 lg 8838 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    AA59569R36S0500

    Abstract: AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781
    Text: Braids, Cables & Strands Technical Information Bare, Tinned, & Silver-plated Copper . 2 & 3 Standard & Extrawide Braided Copper . 4 & 5 Extraflexible, Round Braided Copper . 5 & 6


    Original     		QQ-B-575) AA59569R36S0500 AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im


    OCR Scan     		NE71300 NE71300 NE71300N NE71300M NE71300L 24-Hour PDF

    JE 1692

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN GA = 9 . 5 d B T Y P a t f = 12 G H z m Lg = 0.3 |_im, W g = 280 |_im


    OCR Scan     		NE71300 JE 1692 PDF

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138 PDF

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k PDF

    SIA 6822

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz m 2, < CD HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz GATE WIDTH: Wg = 280


    OCR Scan     		NE71383B NE71383B SIA 6822 PDF

    sg 6822

    Abstract: ne71383B sg 8841 ku-band oscillator D 1307
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim


    OCR Scan     		NE71383B NE71383B NE71300L 24-Hour sg 6822 sg 8841 ku-band oscillator D 1307 PDF

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383 PDF

    z 0607

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im


    OCR Scan     		NE71383B NE71383B NE71300L NE71383 24-Hour z 0607 PDF

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <


    OCR Scan     		NE71300 TheNE71300 NE71300 3e-12 6e-12 15e-12 5e-12 04e-12 PDF

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01 PDF