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    NE68639 Search Results

    NE68639 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE68639 NEC Semiconductor Selection Guide Original PDF
    NE68639 NEC NPN silicon high frequency transistor. Original PDF
    NE68639R NEC NPN silicon high frequency transistor. Original PDF
    NE68639R-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68639R-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68639-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68639-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE68639 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5179

    Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel
    Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 8639R NE686 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    84t MARKING

    Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10


    Original     		PDF NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 84t MARKING marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R

    2SC5181

    Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour 2SC5181 2SC5179 2SC5180 NE68618 NE68619 NE68630 S21E UPA807T 73300

    marking 269-3 sot23

    Abstract: NE68618-T1-A IC ua 741 T 0599
    Text: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 8639R NE68618-T1-A NE68619-T1-A NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 marking 269-3 sot23 IC ua 741 T 0599

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    20323

    Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630
    Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 8639R NE686 20323 marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630

    marking 269-3 sot23

    Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633
    Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz


    Original     		PDF NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour marking 269-3 sot23 NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE68619 NE68630 NE68633

    C1A MARKING

    Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10


    Original     		PDF NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 UPC1675G UPC1676G C1A MARKING c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    PJ 0349

    Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z


    OCR Scan     		PDF NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 PJ 0349 CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159

    NE68019

    Abstract: NE68839 NE68018 NE68719
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 OT-343 NE68019 NE68119 NE68839 NE68719

    cd 1691 cp

    Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 cd 1691 cp cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600

    sot 326

    Abstract: 338 sot-23 NE68530 NE02139
    Text: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 sot 326 338 sot-23 NE68530 NE02139

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


    OCR Scan     		PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide

    ne666

    Abstract: 21421 Series ic 74600 NE686
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600

    tt 18934

    Abstract: 30i sot23 5140 SN 74500
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z


    OCR Scan     		PDF IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T