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    NE65 Search Results

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    SiT3808AI-22-33NE-65.000000 SiTime 1 to 80 MHz, ±10 to ±50 ppm VCXO Datasheet
    SIT3907AI-22-33NE-6.553600 SiTime 1 to 220 MHz, ±10 to ±50 ppm Digitally-controlled XO Datasheet
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    Tymphany HK Limited NE65W-04

    SPEAKER 4OHM 25W TOP PORT 82.7DB
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    STMicroelectronics EVLONE65W

    VERY HIGH POWER DENSITY BOARD -
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    NE65 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE6500179A NEC 1 W L-BAND POWER GaAs MES FET Original PDF
    NE6500179A-T1 NEC 1 W L-Band Power GaAs MES FET Original PDF
    NE6500179A-T1-AZ NEC FET Transistor: 1W L-BAND POWER GaAs MESFET: Tape And Reel Original PDF
    NE6500379 NEC 3W L, S-BAND POWER GaAs MESFET Original PDF
    NE6500379A NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Original PDF
    NE6500379A NEC 3W L, S-BAND POWER GaAs MESFET Original PDF
    NE6500379A NEC Semiconductor Selection Guide Original PDF
    NE6500379A NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Scan PDF
    NE6500379A-AZ NEC IC FET MISC MEDIUM POWER GaAs MESFET Original PDF
    NE6500379A-T1 NEC 3 W L, S-Band Power GaAs MESFET Original PDF
    NE6500379A-T1 NEC 3W, L/S-BAND MEDIUM POWER GaAs MESFET Scan PDF
    NE6500496 NEC Semiconductor Selection Guide Original PDF
    NE6500496 NEC 4 W L, S-Band Power GaAs FET N-Channel GaAs MES FET Original PDF
    NE6500496 NEC L&S BAND MEDIUM POWER GaAs MESFET Original PDF
    NE6500496 NEC Semiconductor Selection Guide 1995 Original PDF
    NE6500496-AZ NEC FET Transistor: 4W L: S-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET Original PDF
    NE650103M California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF
    NE650103M California Eastern Laboratories NECS 10 W L & S-BAND POWER GaAs MESFET Original PDF
    NE650103M NEC 10 W L, S-BAND POWER GaAs MES FET Original PDF
    NE650103M-A California Eastern Laboratories 10 W L & S-BAND POWER GaAs MESFET Original PDF

    NE65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E-16

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1


    Original     		PDF NE6510179A 1e-16 10e-12 5e-12 20e-12 4e-12 24-Hour

    max 16801 pspice

    Abstract: 40J100
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour max 16801 pspice 40J100

    Untitled

    Abstract: No abstract text available
    Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1


    Original     		PDF NE6500379A IMT-2000, IMT2000, 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    6822 FET

    Abstract: No abstract text available
    Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE6501R479A IR35-00-2 24-Hour 6822 FET

    NE6510179A

    Abstract: NE6510179A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power CW with high linear


    Original     		PDF NE6510179A NE6510179A NE6510179A-T1

    NE6501077

    Abstract: NEC Microwave Semiconductors
    Text: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage


    Original     		PDF NE6501077 NE6501077 24-Hour NEC Microwave Semiconductors

    NE6500379A

    Abstract: NE6500379A-T1
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8


    Original     		PDF NE6500379A NE6500379A NE6500379A-T1 24-Hour NE6500379A-T1

    NEC 7808

    Abstract: gl 7808 NE6500179A NE6500179A-T1 7808 nec
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE6500179A 1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power CW with high


    Original     		PDF NE6500179A NE6500179A NE6500179A-T1 NEC 7808 gl 7808 NE6500179A-T1 7808 nec

    nec k 4145

    Abstract: NE6510179A NE6510379A NE651R479A NE651R479A-T1
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear


    Original     		PDF NE651R479A NE651R479A NE6510179A NE6510379A. nec k 4145 NE6510379A NE651R479A-T1

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE6500379A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.68 nH LD 0.55 nH LDX 0.015 nH DRAIN RDBX 480 ohms GATE CBSX 100 pF CGS PKG 0.1 pF CDS PKG 0.1 pF RSX 0.2 ohms FET NONLINEAR MODEL PARAMETERS 1 LSX 0.001 nH SOURCE Parameters Q1 Parameters


    Original     		PDF NE6500379A 1e-14 10e-12 5e-12 25e-12

    NE6510179A

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    100A5R1CP150X

    Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
    Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE651R479A IMT-2000, NE651R479A 100A5R1CP150X IMT-2000 NE651R479A-A NE651R479A-T1-A ATC 1084

    NE6510179A

    Abstract: No abstract text available
    Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,


    Original     		PDF NE6510179A IMT-2000, 24-Hour

    GaAs MESFET

    Abstract: NE6500379A
    Text: PRELIMINARY DATA SHEET INIE C 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 10 dB TYP


    OCR Scan     		PDF NE6500379A NE6500379A GaAs MESFET

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high


    OCR Scan     		PDF NE6500379A NE6500379A NE6500379A-T1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear


    OCR Scan     		PDF NE6510379A NE6510379A

    x 1535 ce

    Abstract: 0537
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high


    OCR Scan     		PDF NE651R479A NE6510179A NE6510379A. x 1535 ce 0537

    sn 0716

    Abstract: NEC D 587
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1


    OCR Scan     		PDF NE6500496 NE6500496 sn 0716 NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The N E 6 5 0 R 4 7 9 A is a 0.4 W G aA s M ES FET d e sig n e d fo r m iddle po w e r tra n sm itte r ap p lica tio n s for m obile co m m u n ica tio n ha nd set and base statio n system s. It is ca p a b le o f d e live rin g 0 .4 w a tt o f o u tp u t po w e r C W w ith high


    OCR Scan     		PDF NE650R479A

    NEC Microwave Semiconductors

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage


    OCR Scan     		PDF NE6500496 NE6500496 IS12I IS22I2 IS12S21I NEC Microwave Semiconductors

    NEC k 1760

    Abstract: NE6510179A
    Text: PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES NE6510179A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin = +20 dBm


    OCR Scan     		PDF NE6510179A NE6510179A-T1 24-Hour NEC k 1760 NE6510179A

    NE650

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage


    OCR Scan     		PDF NE6501077 NE6501077 IS12I IS22I2 IS12I IS12S21I CA95054-1B17 24-Hour NE650

    a 1232 nec

    Abstract: NE6510179A nec 1565 NEC TANTALUM
    Text: DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1YV GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 1 watt of output power CW with high linear gain, high efficiency


    OCR Scan     		PDF NE6510179A NE6510179A a 1232 nec nec 1565 NEC TANTALUM