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    NE5550779A Search Results

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    NE5550779A Price and Stock

    Rochester Electronics LLC NE5550779A-T1A-A

    N-CHANNEL POWER MOSFET
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    DigiKey NE5550779A-T1A-A Bulk 20,035 77
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    California Eastern Laboratories (CEL) NE5550779A-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550779A-T1-A

    RF MOSFET LDMOS 7.5V 79A
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    Renesas Electronics Corporation NE5550779A-T1A-A

    - Tape and Reel (Alt: NE5550779A-T1A-A)
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    Avnet Americas NE5550779A-T1A-A Reel 4 Weeks 93
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    Rochester Electronics NE5550779A-T1A-A 20,035 1
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    NE5550779A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE5550779A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF
    NE5550779A-EV04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550779A-EV09-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550779A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 2.1A 79A-PKG Original PDF

    NE5550779A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


    Original     		PDF NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550779A-EV04-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET,


    Original     		PDF NE5550779A-EV04-A NE5550779A-EV04-A NE5550779A 460MHz. 140mA 28mil 460MHz 140mA

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550779A-EV09-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV09-A is an evaluation circuit board for Renesas’ LDMOS power FET,


    Original     		PDF NE5550779A-EV09-A NE5550779A-EV09-A NE5550779A 915MHz. 100mA 28mil 915MHz 100mA

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    NE5550779A-T1

    Abstract: sma 906
    Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404