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    NE32400 Price and Stock

    LUMEL SA BA391NE3240000

    Ammeter; on panel; I AC: 0÷800A; Class: 3; 300V; BA39; 96x96x64mm
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    TME BA391NE3240000 1
    • 1 $39.77
    • 10 $36.93
    • 100 $36.93
    • 1000 $36.93
    • 10000 $36.93
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    SiTime Corporation SIT3808AC-22-28NE-32.400000

    MEMS Oscillators
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    Chip1Stop SIT3808AC-22-28NE-32.400000 984
    • 1 -
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    • 100 $4.6
    • 1000 $4.14
    • 10000 $4.14
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    SiTime Corporation SIT3808AC-D3-33NE-32.400000

    MEMS Oscillators
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop SIT3808AC-D3-33NE-32.400000 976
    • 1 -
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    • 100 $4.6
    • 1000 $4.14
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    SiTime Corporation SIT3808AC-C3-33NE-32.400000

    MEMS Oscillators
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop SIT3808AC-C3-33NE-32.400000 958
    • 1 -
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    • 100 $4.6
    • 1000 $4.14
    • 10000 $4.14
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    SiTime Corporation SIT3808AI-G3-28NE-32.400000

    MEMS Oscillators
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop SIT3808AI-G3-28NE-32.400000 947
    • 1 -
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    • 100 $4.6
    • 1000 $4.14
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    NE32400 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32400 NEC Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. Original PDF
    NE32400 NEC C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP Original PDF
    NE32400 Unknown FET Data Book Scan PDF
    NE32400M NEC Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. Original PDF
    NE32400N NEC Ultra low noise pseudomorphic HJ FET. Original PDF

    NE32400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NE32400 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)4.0 V(BR)GSS (V)3.0 I(D) Max. (A)70m P(D) Max. (W)200m Maximum Operating Temp (øC)175 I(DSS) Min. (A)15m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF NE32400

    NE32400

    Abstract: NE32400M NE32400N
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip


    Original     		PDF NE32400 NE32400 24-Hour NE32400M NE32400N

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		PDF NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p

    ne324

    Abstract: NE32400
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip


    Original     		PDF NE32400 NE32400 24-Hour ne324

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im


    OCR Scan     		PDF NE32400 NE32400 str11 IS12I lS22l

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim


    OCR Scan     		PDF NE32400 NE32400 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y V d s = 2 V , Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSO CIATED GAIN: G a = 11.0 dB typical at f = 12 GHz


    OCR Scan     		PDF NE32400 NE32400

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 2 4 0 0 and N E 2 4 2 0 0 a re H e te ro J u n c tio n F ET ch ip th a t u tiliz e s th e h e tero ju n c tio n be tw e e n S i-d o p e d A IG a A s


    OCR Scan     		PDF NE32400, NE24200

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32400, NE24200 NE32400 NE24200 NE32400

    NE329

    Abstract: No abstract text available
    Text: Low Noise GaAs FETs Typical Specifications @ Ta = 25°C Part |j| Hiigf g 8 NE24200 NE32400 NE33200 0.25 0.25 0.3 0.1 to 40 0.1 to 40 0.1 to 18 12 12 12 2.0 2.0 2.0 10 10 10 0.6 0.6 0.75 11.0 11.0 10.5 2.0 2.0 2.0 20 20 20 NE325S01 0.2 200 O.t to 14 12 2.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE329

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application