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    NE329 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32900 NEC Semiconductor Selection Guide Original PDF
    NE32900 NEC NONLINEAR MODEL Original PDF
    NE32984D NEC N-CHANNEL HJ-FET Original PDF
    NE32984D-S NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32984D-SL NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32984D-T1 NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32984D-T1 NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE329S01 NEC N-CHANNEL HJ-FET Original PDF
    NE329S01 NEC SUPER LOW NOISE HJ FET Original PDF
    NE329S01 NEC Semiconductor Selection Guide Original PDF
    NE329S01-T1 NEC SUPER LOW NOISE HJ FET Original PDF
    NE329S01-T1B NEC SUPER LOW NOISE HJ FET Original PDF

    NE329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE329S01

    Abstract: NE329S01-T1 NE329S01-T1B
    Text: SUPER LOW NOISE HJ FET NE329S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: 0.2 µm • GATE WIDTH: 200 µm


    Original     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour NE329S01-T1 NE329S01-T1B

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE329S01 CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.56nH Rdx 6 ohms Rgx 0.64nH 6 ohms Lsx 0.06nH CGS_PKG 0.055pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1


    Original     		PDF NE329S01 001pF 055pF 1e-14 3e-12 13e-12 42e-12 023e-12 24-Hour

    FET model

    Abstract: NE32900
    Text: NONLINEAR MODEL SCHEMATIC NE32900 Ldx DRAIN 0.28nH Q1 Lgx GATE 0.35nH Lsx 0.025nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -0.825 RG 7 time seconds VTOSC RD 4 capacitance farads ALPHA 7 RS 4 inductance


    Original     		PDF NE32900 025nH 1e-14 3e-12 095e-12 42e-12 023e-12 24-Hour FET model NE32900

    NE32984D

    Abstract: NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE


    Original     		PDF NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour NE32984D-S NE32984D-SL NE32984D-T1 K 3264 fet

    NEC D288

    Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		PDF NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817

    NEC D74

    Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
    Text: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped


    Original     		PDF NE32900 NE32900 NEC D74 transistor D113 NEC D76 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70

    low noise, hetero junction fet

    Abstract: NE32984D NE32984D-S NE32984D-T1 IS21S
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour low noise, hetero junction fet NE32984D-S NE32984D-T1 IS21S

    22S21

    Abstract: NE329 NEC Ga FET marking A
    Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm


    Original     		PDF NE3210S01 NE3210S01 3210S01 24-Hour 22S21 NE329 NEC Ga FET marking A

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    NE32900

    Abstract: 4560d
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET IV IF f / HETERO j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION N E 3 29 00 is H etero J u n ctio n F E T chip th a t utilizes the hetero ju n ctio n betw een S i-d op ed A IG aA s and un do pe d


    OCR Scan     		PDF NE32900

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    U/25/20/TN26/15/850/NE32984D

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s b 2V , Io s - 1 0 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m TJ • Lg S 0 .2 0 |im , W g = 2 0 0 |u n


    OCR Scan     		PDF NE32984D NE32984D NE32984D-S NE32984D-T1 NE32984D-SL 84D-SL 24-Hour U/25/20/TN26/15/850/NE32984D

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • Lg < 0.20 ^m, WG = 200 \im


    OCR Scan     		PDF NE32984D NE32984D NE32984D-S NE32984D-T1 24-Hour

    5282 F 1349

    Abstract: No abstract text available
    Text: _ DATA SHEET_ IV IF f * / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ESC R IPTIO N The NE329S01 is a Hetero Junction FET that utilizes the


    OCR Scan     		PDF NE329S01 NE329S01 Rn/50 5282 F 1349

    840-SL

    Abstract: NE32984D U/25/20/TN26/15/850/NE32984D
    Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32984D NOISE FIGURE & ASSOCIATED FEATURES GAIN v« FRFOMFWrV Vos = 2 V, lo i a 10 IÎ1A • VERY LOW NOISE FIGURE: 0.40 d 8 Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 0 8 Typical at 12 GHz ai • La i 0.20 pm . W o • 200 nm


    OCR Scan     		PDF NE32984D NE329640 NE329640-S NE329Ã 40-T1 NE32964D-SI 840-SL 840-SL NE32984D U/25/20/TN26/15/850/NE32984D

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE329S01 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y S U P E R L O W N O IS E F IG U R E : 0.35 dB Typ at f = 12 GHz H IG H A S S O C IA T E D G A IN : m T> < 3 1 3 .0 d B T y p a tf = 12 GHz G A T E L E N G TH : 0.2 jim


    OCR Scan     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B 24-Hour

    0747

    Abstract: NE32900
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32900 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 d B T y p a tf = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE32900 NE32900 1e-14 3e-12 095e-12 42e-12 023e-12 0747

    NEC Ga FET marking L

    Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
    Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm


    OCR Scan     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking

    NE32900

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32900 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES SUPER LOW NOISE FIGURE: 0.35 dB T yp at f = 12 G Hz HIGH ASSOCIATED GAIN: m T> < 1 3 . 0 d B T y p a t f = 12 G Hz GATE LENGTH: 0.2 jim 3 ro GATE W IDTH: 200 jim


    OCR Scan     		PDF NE32900 24-Hour NE32900