Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE32400M Search Results

    NE32400M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32400M NEC Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. Original PDF

    NE32400M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE32400

    Abstract: NE32400M NE32400N
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip


    Original     		NE32400 NE32400 24-Hour NE32400M NE32400N PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •


    OCR Scan     		E32400 IS12I PDF