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    NDS8947 Price and Stock

    onsemi NDS8947

    MOSFET 2P-CH 30V 4A 8SOIC
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    DigiKey NDS8947 Digi-Reel 1
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    Avnet Americas NDS8947 Bulk 4 Weeks 345
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    Rochester Electronics LLC NDS8947

    MOSFET 2P-CH 30V 4A 8SOIC
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    DigiKey NDS8947 Bulk 286
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    Fairchild Semiconductor Corporation NDS8947

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    Bristol Electronics NDS8947 6,665 5
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    Quest Components NDS8947 5,332
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    NDS8947 1,752
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    NDS8947 1,256
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    NDS8947 799
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    Rochester Electronics NDS8947 6,899 1
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    NDS8947 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDS8947 Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS8947 Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8947 National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8947 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8947 National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8947_NL Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS8947 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8947

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS8947
    Text: March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8947 CBVK741B019 F011 F63TNR F852 L86Z NDS8947

    NDS8947

    Abstract: dual transistor
    Text: March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8947 NDS8947 dual transistor

    NDS8947

    Abstract: No abstract text available
    Text: N March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS8947 NDS8947

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Step-Down LTC1624 Voltage Regulator 2A

    Abstract: EPF10K100A EPF10K100B LT1573 LT1580CT LT1584 LT1585A LT1587 33v50
    Text: 2.5Vデバイスの設計法 1999年 1 月 ver. 1 イントロダク ション Application Note 106 アルテラは性能の改善とコストの低減を実現するため2.5Vの電源電圧で動 作する最新プロセスで製造されたデバイスを発表しています。2.5V動作のデ


    Original     		PDF 20KFLEX 7000B 20KFLEX 10KEMAX -AN-106-01/J 10KE3 10K25% 7000B40% Step-Down LTC1624 Voltage Regulator 2A EPF10K100A EPF10K100B LT1573 LT1580CT LT1584 LT1585A LT1587 33v50

    amplifier advantages and disadvantages

    Abstract: nds8947 LTC1580 EPF10K100A EPF10K100B LT1573 LT1580CT LT1584 LT1585A LT1587
    Text: Designing with 2.5-V Devices July 1999, ver. 1.01 Introduction Application Note 106 To improve performance and reduce costs, Altera has introduced devices fabricated on an advanced process that requires a 2.5-V power supply. Although 2.5-V devices are new to the programmable logic industry, they


    Original     		PDF 7000B amplifier advantages and disadvantages nds8947 LTC1580 EPF10K100A EPF10K100B LT1573 LT1580CT LT1584 LT1585A LT1587

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    LT1630

    Abstract: LT1631 LT1632 LT1633 LTC1427-50
    Text: Linear Technology Chronicle June 1998 ßÑÒÓÔÕÖx âã Ø1Ö× Chinese Edition Traditional 2 3 4 5 6 7 6 8 9 : ; < = 2.7V>5V ? ±15V A B C 8 D E F E G! H I J K L M N O P QRS T U V W XRY Z [ \ ] ^ _ ` a [ O b c d e f ghH ijH k l m n o n W p q r — s \ t u v wx


    Original     		PDF LT1631 30MHz sxLT1632 LT1633 45MHz LT1630 LT1632 LT1633 LTC1427-50

    LT1630

    Abstract: LT1631 LT1632 LT1633 Spannungsregler ctx210605
    Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products June 1998 Vol. 7 No. 6 German Edition Die maximale Eingangs-Offsetspannung ist 525µV beim LT1630/LT1631 und 1,35mV beim LT1632/LT1633. Die Eingangs-Rauschspannung beträgt beim LT1630/LT1631 nur 6nV/√Hz und


    Original     		PDF LT1630/LT1631 LT1632/LT1633. LT1632/LT1633 12nV/Hz 300mA LT1630 LT1631 LT1632 LT1633 Spannungsregler ctx210605

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    LTC1579

    Abstract: LT1630 LT1632 LT1631 LT1633
    Text: Linear Technology Chronicle June 1998 !"#= = = ! = Vol. 7 No. 6 Korean Edition = = • OKTsI=Rs= =±NRs= = = J J != =lé= op - - ! ! !"#$%&' !: ADC . ! , !" , , - - !. op LT 1630 LT1631 30MHz ! 10V/µs !. LT1632 op LT1633 ! 45V/µs 45MHz !. op iqNSPM iqNSPN iqNSPO iqNSPP


    Original     		PDF LT1631 30MHz LT1632 LT1633 45MHz LT1630/ LT1632/LT1633 LT1631 LTC1579 LT1630 LT1632 LT1633

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    NDS8947

    Abstract: No abstract text available
    Text: March 1996 N NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS8947 NDS8947 0D33347

    NDS8947

    Abstract: No abstract text available
    Text: National M ay 1996 Semiconductor ” NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8947 bS0113D NDS8947

    Untitled

    Abstract: No abstract text available
    Text: M arch 1996 N NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS8947 NDS8947 193tQ

    A7840

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS8947 S8947 A7840

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P

    2-C1-0R033J

    Abstract: 12V 0.5A 5-Pin Voltage Regulators with Reset Function
    Text: r r u n LTC1143/LTC1143L LTC1143L-ADJ m TECHNOLOGY Dual High Efficiency SO-16 Step-Down Switching Regulator Controllers KRTUIKS D C S C R IP TIO n • Dual Outputs LTC1143, LTC1143L: 3.3V, 5V LTC1143L-ADJ: Dual Adjustable ■ Very High Efficiency: Over 95% Possible


    OCR Scan     		PDF LTC1143/LTC1143L LTC1143L-ADJ SO-16 LTC1143 400kHz LTC1143L-ADJ, LTC1143L-ADJ 1143faLT/TP 2-C1-0R033J 12V 0.5A 5-Pin Voltage Regulators with Reset Function