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    NDP5060 Price and Stock

    Rochester Electronics LLC NDP5060

    NDP5060 - 26A, 60V, 0.05OHM, N-C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDP5060 Bulk 1,080 579
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    • 1000 $0.52
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    onsemi NDP5060

    POWER FIELD-EFFECT TRANSISTOR, 26A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB - Bulk (Alt: NDP5060)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NDP5060 Bulk 4 Weeks 697
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    • 1000 $0.51667
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    Fairchild Semiconductor Corporation NDP5060

    NDP5060 - 26A, 60V, 0.05ohm, N-Channel MOSFET, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics NDP5060 1,080 1
    • 1 $0.5233
    • 10 $0.5233
    • 100 $0.4919
    • 1000 $0.4448
    • 10000 $0.4448
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    NDP5060 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDP5060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP5060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP5060 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP5060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDP5060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP5060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP5060L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP5060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDP5060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    v 250 c 45

    Abstract: NDB5060 NDP5060 0V24V
    Text: N October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 v 250 c 45 NDB5060 0V24V

    MJ-26

    Abstract: NDB5060L NDP5060L V4580
    Text: N October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP5060L NDB5060L MJ-26 NDB5060L V4580

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L NDP5060L
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L NDP5060
    Text: October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L NDP5060
    Text: October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L NDP5060L
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    NDB5060L

    Abstract: NDP5060L
    Text: O ctober 1 996 N NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h e s e logic level N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effect transistors a re produced using N ational's proprietary,


    OCR Scan     		PDF NDP5060L NDB5060L NDB5060L

    Untitled

    Abstract: No abstract text available
    Text: October 1996 N NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP5060 NDB5060

    Untitled

    Abstract: No abstract text available
    Text: October 1996 N NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP5060 NDB5060

    NDB5060

    Abstract: NDP5060
    Text: O ctober 1 996 N NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP5060 NDB5060 NDB5060

    NDP5060L

    Abstract: No abstract text available
    Text: October 1996 N NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDP5060L NDB5060L