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    onsemi NDP4060

    MOSFET N-CH 60V 15A TO220-3
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    DigiKey NDP4060 Tube
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    Avnet Americas NDP4060 Bulk 4 Weeks 709
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    onsemi NDP4060L

    MOSFET N-CH 60V 15A TO220-3
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    Fairchild Semiconductor Corporation NDP4060

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    Bristol Electronics NDP4060 1,080
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    Quest Components NDP4060 864
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    NDP4060 14
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    Rochester Electronics NDP4060 86,239 1
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    Component Electronics, Inc NDP4060 26
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    Fairchild Semiconductor Corporation NDP4060L

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    Quest Components NDP4060L 2
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    NDP4060 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDP4060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDP4060 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP4060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDP4060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDP4060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDP4060L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDP4060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDP4060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDP4060_NL Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDP4060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDB4060L

    Abstract: NDP4060L 24V64 zener diode 12v 0.5 w
    Text: April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP4060L NDB4060L NDB4060L 24V64 zener diode 12v 0.5 w

    NDB4060

    Abstract: NDP4060
    Text: July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 15A, 60V. RDS ON = 0.10Ω @ VGS=10V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDP4060 NDB4060 NDB4060

    FDP2670

    Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		PDF FDP2670/FDB2670 FDP2670 D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
    Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP6644/FDB6644 CBVK741B019 EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L

    high voltage mosfet, to-220 case

    Abstract: No abstract text available
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 high voltage mosfet, to-220 case

    Untitled

    Abstract: No abstract text available
    Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP6690S/FDB6690S FDP6690S FDP6690S/FDB6690S FDP6035AL/FDB6035AL

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060

    T0-263

    Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
    Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage


    Original     		PDF FDP4020P/FDB4020P O-220 O-263 T0-263 CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220

    FDB7045L

    Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
    Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP7045L/FDB7045L FDB7045L CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L

    TO220 Semiconductor Packaging

    Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
    Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDP6676/FDB6676 TO220 Semiconductor Packaging CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild

    zener diode 3.0 b2

    Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
    Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP7050 NDB7050 zener diode 3.0 b2 m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.


    Original     		PDF FDP5645/FDB5645

    FDP5680

    Abstract: No abstract text available
    Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features • 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters


    Original     		PDF FDP5680/FDB5680 FDP5680

    NDB4060L

    Abstract: NDP4060L
    Text: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using


    OCR Scan     		PDF NDP4060L/ NDB4060L b5G1130 00MD2MM NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D SEM IC ONDUCTO R April 1996 tm NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP4060L NDB4060L NDB4060L

    NDP4060L

    Abstract: NDB4060L
    Text: A p ril 1996 FAIRCHILD Ml C O N D U C T O R i NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP4060L NDB4060L NDB4060L

    NDB4060

    Abstract: NDP4060
    Text: July 1996 Nationa I Semiconductor " NDP4060/ NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP4060/NDB4060 bSD113G 0G4053Ã bS01130 004053R NDB4060 NDP4060

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP4060 NDB4060 P4060

    NDB4060

    Abstract: NDP4060
    Text: J u ly 1 9 9 6 FAIRCHILD MICDNDUCTDR tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDP4060 NDB4060 NDB4060

    NDB4060L

    Abstract: No abstract text available
    Text: ^ A I R C H April 1996 I I - D M l C O IN D U C T O R NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP4060L NDB4060L

    Untitled

    Abstract: No abstract text available
    Text: July 1996 F A IR C H IL D SEM ICONDUCTO R tm NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDP4060 NDB4060