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    onsemi NDD02N60ZT4G

    MOSFET N-CH 600V 2.2A DPAK
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    Newark NDD02N60ZT4G Bulk 1,240
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    Rochester Electronics NDD02N60ZT4G 3,767 1
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    Rochester Electronics LLC NDD02N60ZT4G

    600V 2.2A SINGLE N-CHANNEL
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    NDD02N60ZT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDD02N60ZT4G On Semiconductor NDD02N60 - TRANSISTOR 2.2 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 369AA-01, DPAK-3, FET General Purpose Power Original PDF

    NDD02N60ZT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ndf02n60zg

    Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG

    Untitled

    Abstract: No abstract text available
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D

    Untitled

    Abstract: No abstract text available
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NDF02N60Z, NDD02N60Z NDF02N60Z/D

    NDD02N60

    Abstract: 221D-03 NDP02N60Z NDF02N60Z 221D 369D A114 NDD02N60Z ndf02n60 NDP02N60ZG
    Text: NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.0 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS on (TYP) @ 1 A 600 V 4.0 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original
    PDF NDF02N60Z, NDP02N60Z, NDD02N60Z NDF02N60Z/D NDD02N60 221D-03 NDP02N60Z NDF02N60Z 221D 369D A114 NDD02N60Z ndf02n60 NDP02N60ZG

    369D

    Abstract: No abstract text available
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D 369D

    BFR 965

    Abstract: NDP02N60Z NDP02N60ZG 60ZG
    Text: NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • http://onsemi.com Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    PDF NDF02N60Z, NDP02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D BFR 965 NDP02N60Z NDP02N60ZG 60ZG