diode 8109

Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Contextual Info: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using

Contextual Info: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDB7061

Abstract: NDP7061 64a through hole diode
Contextual Info: N May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

zener diode 3.0 b2

Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Contextual Info: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Contextual Info: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDB7061L

Abstract: NDP7061L
Contextual Info: N June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7061 NDP4060L NDP7061
Contextual Info: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDB7061

Abstract: NDP7061 LD 8105 d0403
Contextual Info: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

transistor FS 18 SM

Contextual Info: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow e r field effect transistors are produced using N ational's proprietary, high cell density, DMOS

zener diode 3.0 b2

Abstract: zener diodes color coded BE 64A m 9835 FDP7060 L86Z NDB7061 NDP4060L NDP7061 CBVK741B019
Contextual Info: May 1996 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

T64A

Abstract: NDB7061 NDP7061
Contextual Info: M ay 1 9 9 6 N NDP7061 / NDB7061 N-Channel Enhancement M ode Field Effect Transistor General Description Features T h ese N -C hannel en h a n ce m e n t m o d e p o w er field effect transistors are p rod u ced u sin g N ational's proprietary, high cell d en sity, DMOS tech n o lo g y .

Contextual Info: May 1996 N NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

Contextual Info: June 1996 N NDP7061 L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p ow er field effect transistors are produced using National's proprietary, high cell density, DMOS

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

NDB7061L

Abstract: NDP7061 NDP7061L
Contextual Info: June 1 9 9 6 N NDP7061 L / N D B 7061L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se lo g ic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e ffe c t tr a n sisto r s are p r o d u c e d u s in g