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    NDB60 Price and Stock

    Rochester Electronics LLC NDB603AL

    MOSFET N-CH 30V 25A D2PAK
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    DigiKey NDB603AL Bulk 30,000 919
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    Rochester Electronics LLC NDB6030PL

    30A, 30V, 0.025OHM, P-CHANNEL,
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    DigiKey NDB6030PL Bulk 3,647 307
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    Rochester Electronics LLC NDB6030L

    N-CHANNEL POWER MOSFET
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    DigiKey NDB6030L Bulk 580 175
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    onsemi NDB6060

    MOSFET N-CH 60V 48A D2PAK
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    DigiKey NDB6060 Reel 800
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    NDB6060 Cut Tape 1
    • 1 $2.13
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    onsemi NDB6020P

    MOSFET P-CH 20V 24A D2PAK
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    NDB6020P Digi-Reel 1
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    NDB60 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDB6020 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6020 National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6020P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6020P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB6020P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB603 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6030 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB6030 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6030L Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB6030L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB6030PL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB6030PL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB6030PL_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB603AL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB603AL Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB603AL National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    NDB6050 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB6050 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB6050 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDB60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060

    NDB6051L

    Abstract: NDP6051L 30D40 MJ48A
    Text: N November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field


    Original     		PDF NDP6051L NDB6051L NDB6051L 30D40 MJ48A

    R6024

    Abstract: NDB6020P NDP6020P zener diode 5v with reverse recovery time 1us NDP602
    Text: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field


    Original     		PDF NDP6020P NDB6020P R6024 NDB6020P zener diode 5v with reverse recovery time 1us NDP602

    NDB6020P

    Abstract: NDP6020P
    Text: N November 1996 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6020P NDB6020P NDB6020P

    NDB6050L

    Abstract: NDP6050L
    Text: April 1996 NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6050L NDB6050L NDB6050L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6030PL NDB6030PL

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L

    NDB608A

    Abstract: NDB608AE NDB608B NDB608BE NDP608A NDP608AE NDP608B NDP608BE
    Text: N May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		PDF NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 NDB608BE NDP608BE

    A24100

    Abstract: NDB6050 NDP6050
    Text: March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has


    Original     		PDF NDP6050 NDB6050 NDB6050 A24100

    Untitled

    Abstract: No abstract text available
    Text: September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS ON = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. These logic level P-Channel enhancement mode power field


    Original     		PDF NDP6020P NDB6020P

    ld18a

    Abstract: transistor tc 144
    Text: May 1994 P A IR C H II-D M IC D N D U C T Q R tm NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 ld18a transistor tc 144

    az4v

    Abstract: NDB6050 NDP6050
    Text: March 1996 FAIRCHILD S E M IC O N D U C T O R NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDP6050 NDB6050 NDB6050 az4v

    NDB6050L

    Abstract: 025Q NDP6050L
    Text: FAIRCHILD iM IC G N D U C T D R April 1996 tm NDP6050L / NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6050L NDB6050L NDB6050L 025Q

    NDP603al

    Abstract: NDB603AL Transistor TO220 814
    Text: National f i Semiconductor' January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDP603AL NDB603AL 0DHG22G NDB603AL Transistor TO220 814

    3.5b zener diode

    Abstract: diode so3 NDB6050L NDP6050L
    Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDP6050L/ NDB6050L ne8-59 00402bE bSD1130 D0M02b3 3.5b zener diode diode so3 NDB6050L NDP6050L

    P6030L

    Abstract: 52A zener
    Text: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF June1996 NDP6030L NDB6030L P6030L 52A zener

    Untitled

    Abstract: No abstract text available
    Text: November 1996 N NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDP6051L NDB6051L

    NDB6060

    Abstract: NDP6060
    Text: M a rc h 1 9 9 6 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060 NDB6060 NDB6060

    NDB608A

    Abstract: NDB608AE NDB608B NDB608BE NDP608A NDP608AE NDP608B NDP608BE D 608a
    Text: May 1994 N NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-ehannel enhancem ent mode power field effect transistors are produced using National's


    OCR Scan     		PDF NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 D 608a

    Untitled

    Abstract: No abstract text available
    Text: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using


    OCR Scan     		PDF NDP6060L NDB6060L

    transistor t04 76

    Abstract: GV 475 diode transistor T04 NDB6060 004027S
    Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060

    Untitled

    Abstract: No abstract text available
    Text: FA IR C H ILD MICDNDUCTQ R May1996 tm NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel en hance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF May1996 NDP6051 NDB6051

    ndb603al

    Abstract: 603a
    Text: F A IR C H IL D SEM IC ONDUCTO R January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP603AL NDB603AL 603a