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    NATIONAL SEMICONDUCTOR SUPERIO Search Results

    NATIONAL SEMICONDUCTOR SUPERIO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NATIONAL SEMICONDUCTOR SUPERIO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12V 20A voltage regulators

    Abstract: circuit diagram for automatic voltage regulator smd voltage regulator 3.3v XAPP623 12v step-down transformer operations files LM2636 smd type voltage regulator battery Power Supply from LM2596 XAPP450 12v step-down transformer files
    Text: National Semiconductor’s Power Management Solutions for Xilinx Field Programmable Gate Arrays FPGAs Design Guide Summer 2005 Design Guide Overview Your fast, accurate guide to choosing the best National Semiconductor Power Supply Solution, including: Voltage Regulators, Voltage Supervisors,


    Original     		OT-223 OT-23 O-220 O-263 12V 20A voltage regulators circuit diagram for automatic voltage regulator smd voltage regulator 3.3v XAPP623 12v step-down transformer operations files LM2636 smd type voltage regulator battery Power Supply from LM2596 XAPP450 12v step-down transformer files PDF

    27c32

    Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
    Text: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming


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    scr driver dc motor speed control

    Abstract: 5A, 50V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 200w Widlar working principle of ac servo motor LM12 OP amp IC resistare LM318 regulator complete data on BRIDGE-RECTIFIER BRIDGE-RECTIFIER operation
    Text: National Semiconductor Application Note 446 March 1986 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract A power op amp capable of driving g35V at g10A has been fabricated on a single silicon chip Peak


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    LM709 equivalent

    Abstract: Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709
    Text: National Semiconductor Application Note 29 Robert J. Widlar September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. mance is often limited by leakages in capacitors, diodes, analog switches or printed circuit boards, rather than by the


    Original     		2N2920 2N3728 LM394 LM709 equivalent Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709 PDF

    ICL 2025 audio amp

    Abstract: thermostat tue 3x 103 LM25955 adj panasonic inverter dv 707 manual latest laptop motherboard circuit diagram sony LM2596 schematic constant current sony ccd board Circuit Schematic Diagram 230v ac to 12v dc without transformer opamp 5532 n diode 1n5818
    Text: National Semiconductor European Analog Seminar - 1997 Datasheets AMPLIFIERS LM6132/34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 LM6152/54 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19


    Original     		LM6132/34 LM6152/54 LM7301 LMC272 LMC6035/36 ICL 2025 audio amp thermostat tue 3x 103 LM25955 adj panasonic inverter dv 707 manual latest laptop motherboard circuit diagram sony LM2596 schematic constant current sony ccd board Circuit Schematic Diagram 230v ac to 12v dc without transformer opamp 5532 n diode 1n5818 PDF

    WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35

    Abstract: LM1205N PRINCIPLE OF TEMPERATURE SENSOR LM35 intelligent ambulance car controls the traffic light LM335 spice model LM2596 schematic constant current circuit diagram of crt monitor yoke coil F100K ECL Users Handbook BLOCK SCHEMATIC OF LM335 LM2406T
    Text: National Semiconductor European Analog Seminar - 1997 Application Notes ELECTRO-MAGNETIC COMPATIBILITY AN-988 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 AN-990 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8


    Original     		AN-988 AN-990 AN-1013 AN-1050 LM131 LM131 WORKING PRINCIPLE OF TEMPERATURE SENSOR LM35 LM1205N PRINCIPLE OF TEMPERATURE SENSOR LM35 intelligent ambulance car controls the traffic light LM335 spice model LM2596 schematic constant current circuit diagram of crt monitor yoke coil F100K ECL Users Handbook BLOCK SCHEMATIC OF LM335 LM2406T PDF

    LM361 application note

    Abstract: 9307 BELDEN Schematics 5250 LM361 in5250 Amphenol Assembly instructions AN-516 C1995 DP8344 IBM5250
    Text: National Semiconductor Application Note 516 Thomas J Quigley March 1988 OVERVIEW The DP8344 or Biphase Communications Processor from National Semiconductor’s Advanced Peripherals group brings a new level of system integration and simplicity to the IBM connectivity world Combining a 20 MHz RISC architecture CPU with a flexible multi-protocol transceiver and


    Original     		DP8344 LM361 application note 9307 BELDEN Schematics 5250 LM361 in5250 Amphenol Assembly instructions AN-516 C1995 IBM5250 PDF

    ltcc

    Abstract: HUGHES LMX2326 silver ag wire Bond
    Text: National Semiconductor’s Low Temperature Cofired Ceramics Program N Historical Perspective • LTCC was originally developed by Hughes for MIL systems • National acquired the manufacturing line, licensed the technology, & hired key personnel from Hughes in Aug. 1995


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    underfill

    Abstract: with or without underfill AN-1281
    Text: National Semiconductor Application Note 1281 April 2004 Table of Contents Introduction and Package Construction . Flip Chip on Substrate Assembly Considerations .


    Original     		AN-1281 underfill with or without underfill AN-1281 PDF

    Untitled

    Abstract: No abstract text available
    Text: Geode GX1 Processor Measures Up To Low Power Consumption Expectations Introduction System Power Management States Through a combination of smart design and state-of-the-art process technology, National has produced the National Semiconductor Geode™ GX1 processor. A member of


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    Untitled

    Abstract: No abstract text available
    Text: Geode GX1 Processor Series Measures Up To Low Power Consumption Expectations Introduction Power Management Strategy Through a combination of smart design and state-of-the-art process technology, National has produced the National Semiconductor Geode™ GX1 processor series, one of


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    TAIYO PSR 4000

    Abstract: manual PACE PSR 800 CCL-HL-832 fbga Substrate design guidelines JEDEC Kostat FBGA CCL-HL832 ablebond esec 3018 operation kostat bga 6mm x 6mm nitto hc100
    Text: National Semiconductor Application Note 1125 Shaw W. Lee and Wayne Lee June 2000 Introduction CHIP SCALE PACKAGES Laminate substrate based CSPs are an extension of National Semiconductor’s current Plastic Ball Grid Array PBGA technology and are the package of choice for portable applications. CSPs are available in two package designs: Laminate CSP and Fine Pitch Ball Grid Array (FBGA).


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    6d40 Wiring diagram

    Abstract: DP8302 IC TTL 7400 diagram and truth table DM9318 M5246 69C0 MM5214 DP8300 MM2101 stk 412 210
    Text: PACE Microprocessor System Design Manual National Semiconductor Publication Number 420305292-001A Order Number IPC-16A/928 March 1977 $5.00 PACE Processing And Control Element Microprocessor System Design Manual National Semiconductor Corporation 2900 Semiconductor Drive


    OCR Scan     		20305292-001A IPC-16A/928 J28592 ipc-16a/928 da-dd10m37 6d40 Wiring diagram DP8302 IC TTL 7400 diagram and truth table DM9318 M5246 69C0 MM5214 DP8300 MM2101 stk 412 210 PDF

    39V18

    Abstract: GAL39V18 Signal Path Designer
    Text: NATL SEMICOND MEMORY 31E J> bSOHEb 00fcj4244 k U National Semiconductor GAL39V18 Generic Array Logic General Description Features Using a high performance E2CMOS technology, National Semiconductor has produced a next-generation program­ mable logic device, the GAL 39V18. Having an FPLA archi­


    OCR Scan     		00fcj4244 GAL39V18 GAL39V18 39V18. 24pin, 300-mil TL/L/10002-12 39V18 Signal Path Designer PDF

    B23 zener diode

    Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
    Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B hSG113D B23 zener diode zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B PDF

    Untitled

    Abstract: No abstract text available
    Text: NATIONAL SEMICOND LOGIC b5ailEE 0G7534Q flb5 NSC1 Q18826 National blE D X -ÏZ -C 7 Semiconductor 74ACTQ18826 18-Bit Inverting Buffer/Line Driver with TRI-STATE Outputs General Description Features The ’ACTQ18826 contains eighteen inverting buffers with


    OCR Scan     		0G7534Q Q18826 74ACTQ18826 18-Bit ACTQ18826 PDF

    NDP705A

    Abstract: NDP706A NDP705B NDP706B
    Text: fV t^ h d r 1QQ1 Semiconductor National NDP705A/NDP705B, NDP706A/NDP706B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP705A/NDP705B, NDP706A/NDP706B 272-9S59 h501130 NDP705A NDP706A NDP705B NDP706B PDF

    100N

    Abstract: CLC5622 CLC5622IM CLC5622IMX CLC5622IN
    Text: National Semiconductor & CLC5622 Dual, High Output, Video Amplifier General Description Features The National CLC5622 has a new output stage that delivers high output drive current 130mA , but consum es minimal quiescent supply current (3.0mA/ch) from a single 5V supply. Its


    OCR Scan     		CLC5622 CLC5622 130mA) 30MHz 100N CLC5622IM CLC5622IMX CLC5622IN PDF

    7PAAH

    Abstract: CLC5602 CLC5602IM CLC5602IMX CLC5602IN 335N
    Text: National Semiconductor & CLC5602 Dual, High Output, Video Amplifier General Description Features The National CLC5602 has a new output stage that delivers high output drive current 130mA , but consum es minimal quiescent supply current (1,5mA/ch) from a single 5V supply. Its


    OCR Scan     		CLC5602 CLC5602 130mA) 22MHz 7PAAH CLC5602IM CLC5602IMX CLC5602IN 335N PDF

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


    OCR Scan     		LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918 PDF

    est 7502

    Abstract: ic est 7502
    Text: National e Semiconductor ? CLC5602 Dual, High Output, Video Amplifier General Description Features The National CLC5602 has a new output stage that delivers high output drive current 130mA , but consum es minimal quiescent supply current (1.5mA/ch) from a single 5V supply. Its


    OCR Scan     		CLC5602 130mA) 22MHz applica0-180-530 est 7502 ic est 7502 PDF

    NDC7001C

    Abstract: VX25
    Text: National Semiconductor'" M arch 1 9 9 6 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS


    OCR Scan     		NDC7001C tS0113G Q03T7T3 NDC7001C VX25 PDF

    ic est 7502

    Abstract: est 7502
    Text: National e Semiconductor ? CLC5622 Dual, High Output, Video Amplifier General Description Features The National CLC5622 has a new output stage that delivers high output drive current 130mA , but consum es minimal quiescent supply current (3.0mA/ch) from a single 5V supply. Its


    OCR Scan     		CLC5622 130mA) 30MHz applica0-180-530 ic est 7502 est 7502 PDF

    Untitled

    Abstract: No abstract text available
    Text: Q657 NATIONAL SEMICOND -CLOGI blE D • bSD1152 0Q7S5MS Mbt. ■ EH National ÆtM Semiconductor 7 -5 2 -3 0 -0 74ACQ657 • 54ACTQ/74ACTQ657 Quiet Series Octal Bidirectional Transceiver with 8-Bit Parity Generator/Checker and TRI-STATE Outputs General Description


    OCR Scan     		bSD1152 74ACQ657 54ACTQ/74ACTQ657 ACTQ657 PDF