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    NATIONAL SEMICONDUCTOR RAD HARDNESS Search Results

    NATIONAL SEMICONDUCTOR RAD HARDNESS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NATIONAL SEMICONDUCTOR RAD HARDNESS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Micron Semiconductor

    Abstract: BOEING AN9241 AN-924 C1995 IE10 54AC299
    Text: National Semiconductor Application Note 924 Michael C Maher February 1994 This paper investigates the dose rate radiation response of an Advanced CMOS product the FACTTM Fairchild Advanced CMOS Technology 54AC299 8-Input Universal Shift Storage Register with Common Parallel I O pins Data


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    PDF 54AC299 20-3A Micron Semiconductor BOEING AN9241 AN-924 C1995 IE10

    specification of ldr

    Abstract: LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019
    Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.


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    PDF LM2941 Ph/std883 mil/Downloads/MilSpec/Smd/00501 specification of ldr LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019

    LTS2020

    Abstract: LTS-2020 DE-AC04-94AL85000 al 2539 IC 4051 data sheet LM111 LM139 LM111S NATIONAL SEMICONDUCTOR Rad hardness
    Text: Elimination of Enhanced Low-Dose-Rate Sensitivity and Thermal-Stress Effects in Linear Bipolar Devices M. R. Shaneyfelt, Fellow IEEE, R. L. Pease, Member IEEE, J. R. Schwank, Fellow IEEE, M.C. Maher, Senior Member IEEE, D. M. Fleetwood, Fellow IEEE, S. C. Witczak, Member IEEE, G. L. Hash, Member


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    PDF LM111 LM139s LTS2020 LTS-2020 DE-AC04-94AL85000 al 2539 IC 4051 data sheet LM139 LM111S NATIONAL SEMICONDUCTOR Rad hardness

    ldr 3 pin metal package

    Abstract: sensitivity of ldr LDR SPECIFICATION LDR resistor LDR Datasheet TM1019 LDR positive NSC LDR JMX046X24 5662-0050101QXA
    Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.


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    PDF LM136-2 cobalt-60 ldr 3 pin metal package sensitivity of ldr LDR SPECIFICATION LDR resistor LDR Datasheet TM1019 LDR positive NSC LDR JMX046X24 5662-0050101QXA

    sensitivity of ldr

    Abstract: MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM 3171 LM119 TM1019 LM119xRLQMLV LM111
    Text: 1 RADECS 2009 Proceedings – [DW-1] Low Dose Rate Test Results of National Semiconductor’s ELDRS-free Bipolar Comparators LM111 and LM119 Kirby Kruckmeyer, Member, IEEE, Larry McGee, Bill Brown and Linda Miller Abstract—Many bipolar comparators have been shown to


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    PDF LM111 LM119 com/ds/LM/LM111QML mil/Downloads/MilSpec/Smd/00524 LM119 com/ds/LM/LM119QML mil/Downloads/MilSpec/Smd/96798 MIL-PRF-38535 nloads/MilSpec/Docs/MIL-PRF38535/prf38535 sensitivity of ldr MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM 3171 TM1019 LM119xRLQMLV

    lm140-15

    Abstract: LMD18200-2D/883 CLC427 frequency to voltage converter with LM555 timer lm723 mil 43 LMD18200 LMX2305WG-QML cbic-v lm140-5
    Text: N RADIATION OWNER’S MANUAL Table of Contents – Analog Page Glossary of Analog-Specific Terms Radiation Results – Analog Summary Operational Amplifiers Power Management Data Acquisition Comlinear Phased Locked Loops PLL Data Presentation Analog Test Results


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    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


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    PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    Semiconductor Nuclear Radiation Detector

    Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
    Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each


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    PDF 20-3A Semiconductor Nuclear Radiation Detector fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector

    DE-AC04-94AL85000

    Abstract: analog devices lm139 LM111 LM139 compendium of recent total ionizing dose
    Text: Total Dose Hardening of a Bipolar Voltage Comparator R.L. Pease, RLP Research, Inc., Albuquerque, NM 87122 M. C. Maher, National Semiconductor, South Portland, ME, 04106 M. Savage, P. Baker, J. Krieg, and T. Turflinger, NAVSEA Crane, Crane, IN 47522 M. Shaneyfelt, Sandia Labs, Albuquerque, NM 87185


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    PDF LM139, NS-47, DE-AC04-94AL85000 analog devices lm139 LM111 LM139 compendium of recent total ionizing dose

    ASTM-F-1892

    Abstract: 38510R75001 ASTM-F1892 54AC14 MDS 54AC00 seu 54AC00 Fairchild 54ac14 54ACTQ574 54AC14 seu 54AC08
    Text: N RADIATION OWNER’S MANUAL Logic Table of Contents Page Glossary of Logic-Specific Terms Radiation Results – Logic Summary FACT AC/ACT Advanced CMOS Logic FACT Quiet Series™ (ACQ/ACTQ) FACT FCT F100K 300 Series ECL Total Dose Degradation of the Device’s Switchpoint


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    PDF F100K 61E-05 00E-08 64E-05 51E-05 50E-03 06E-06 01E-06 ASTM-F-1892 38510R75001 ASTM-F1892 54AC14 MDS 54AC00 seu 54AC00 Fairchild 54ac14 54ACTQ574 54AC14 seu 54AC08

    solar power plant

    Abstract: ASTM-F-1892 radiation cots cmos van allen belt van allen belt satellite geomagnetic electromagnetic bomb Fireball P-Channel Depletion Mosfets SOLAR TRANSISTOR
    Text: N RADIATION OWNER’S MANUAL Table of Contents – Issues, Environments, Effects Page Radiation Needs Today Providing a Unique and Cost-Effective Approach to Your Radiation Resistance Needs The Growing Radiation Market Incorporating Radiation Design Dealing with an Array of Radiation Exposures


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    CLAY31

    Abstract: van allen belt satellite pico electronics transformers airmate CLC452 F100K LM117 LM7171 10195 solar cell national semiconductor 400045
    Text: VOLUME NO. 14 1998 Industry Migrates to Bare Die and Known Good Die – Virtual Packaging Known Good Die I t was just a few years ago that electronics designers who wanted the smallest form factor for system upgrades were limited to assorted surface-mount packages. More recently, this has


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    pinout information of CMOS 4001, 4011, 4070

    Abstract: 54C922 CGS3301 54HC123A F100K ECL 300 series and design guide 4060 counter 4029 counter MM54HC245 MM54C76 4081 AND gate
    Text: N National Semiconductor offers a broad selection of advanced logic and interface families. Each family uniquely combines certain process and design techniques to address their evolving roles in system design. System & Board Test Products SCAN National’s portfolio of SCAN test products lowers a system’s cost of ownership over the course of its life cycle.


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    PDF Spectrum/STV/5M96/Printed pinout information of CMOS 4001, 4011, 4070 54C922 CGS3301 54HC123A F100K ECL 300 series and design guide 4060 counter 4029 counter MM54HC245 MM54C76 4081 AND gate

    Untitled

    Abstract: No abstract text available
    Text: FSPYC260R, FSPYC260F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC260R, FSPYC260F FSPYC260F

    1E14

    Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
    Text: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or


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    PDF FSPYC264R, FSPYC264F FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET

    RELAY 20A 12V

    Abstract: 1E14 2E12 FSPYE134D1 FSPYE134R3 Rad Hard in Fairchild for MOSFET
    Text: FSPYE134R, FSPYE134F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYE134R, FSPYE134F FSPYE134F RELAY 20A 12V 1E14 2E12 FSPYE134D1 FSPYE134R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


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    PDF FSGL230R FSGL230R

    Untitled

    Abstract: No abstract text available
    Text: FSPL230R, FSPL230F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPL230R, FSPL230F FSPL230F

    Untitled

    Abstract: No abstract text available
    Text: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


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    PDF FSGYE033R FSGYE033R

    1E14

    Abstract: 2E12 FSPYC260D1 FSPYC260F FSPYC260R FSPYC260R3 Rad Hard in Fairchild for MOSFET
    Text: FSPYC260R, FSPYC260F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPYC260R, FSPYC260F FSPYC260F 1E14 2E12 FSPYC260D1 FSPYC260R FSPYC260R3 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
    Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPL234R, FSPL234F FSPL234F Rad Hard in Fairchild for MOSFET 1E14 2E12 FSPL234D1 FSPL234R FSPL234R3

    FSPJ260R4

    Abstract: 1E14 2E12 FSPJ260D1 FSPJ260F FSPJ260R FSPJ260R3
    Text: FSPJ260R, FSPJ260F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


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    PDF FSPJ260R, FSPJ260F FSPJ260F FSPJ260R4 1E14 2E12 FSPJ260D1 FSPJ260R FSPJ260R3

    1E14

    Abstract: 2E12 FSPYE234D1 FSPYE234F FSPYE234R FSPYE234R3 Rad Hard in Fairchild for MOSFET
    Text: FSPYE234R, FSPYE234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


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    PDF FSPYE234R, FSPYE234F FSPYE234F 1E14 2E12 FSPYE234D1 FSPYE234R FSPYE234R3 Rad Hard in Fairchild for MOSFET

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan
    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40