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    DS16F95QML

    Abstract: ETS500 5962R0923561VZA LM4050WG2 LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q
    Text: 1 Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference Kirby Kruckmeyer, Member, IEEE, Elisa Morozumi, Member, IEEE, Robert Eddy, Thang Trinh, Tom Santiago and Pierre Maillard, Student Member, IEEE Abstract—National Semiconductor’s 100 krad Si low dose


    Original     		PDF LM4050QML LM4050WG2 com/opf/DS/DS16F95 DS16F95 RS-485 MIL-STD-883 June18, /Downloads/MilSpec/Docs/MIL-STD883/std883 DS16F95QML ETS500 5962R0923561VZA LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q

    specification of ldr

    Abstract: LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019
    Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.


    Original     		PDF LM2941 Ph/std883 mil/Downloads/MilSpec/Smd/00501 specification of ldr LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019

    transistor 30054

    Abstract: IC 6601 GH 12v 100 amp battery load tester CAPACITOR chip murata mtbf mbr530 lot date code panasonic 0603 resistor 17000E transistor x1 3003 543e GRM1885C1H470JA01B
    Text: Solved by SP6691 TM Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LEDs @ 25mA ■ Drives up to 8 LEDs @ 20mA ■ High Output Voltage: Up to 30V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V


    Original     		PDF SP6691 350mV 350mA) 1/16W 800-Digi-Key transistor 30054 IC 6601 GH 12v 100 amp battery load tester CAPACITOR chip murata mtbf mbr530 lot date code panasonic 0603 resistor 17000E transistor x1 3003 543e GRM1885C1H470JA01B

    MAS-5010

    Abstract: 53368 62212 ETS500 119185
    Text: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA


    Original     		PDF RM2012XW-QMLV 6354IR EQR2012BA EM16383E JCPAC010 7H4381G019 e-128 MAS-5010 53368 62212 ETS500 119185

    Hi-rel 8936

    Abstract: 45288 2167.1 MAS50 MAS-5010 1764 689 74845 8195 82583 8533
    Text: Hi-Rel Operations National Semiconductor Corporation Radiation Effects Laboratory South Portland, Maine 04106 ANALOG TOTAL DOSE RADIATION REPORT Customer: Rad Qual Part Type: RM2012XW-QMLV Input Bias Circuit: 6354IR Dose Rate: 37.878 rad Si /sec Test Program Used: EQR2012BA


    Original     		PDF RM2012XW-QMLV 6354IR EQR2012BA EM16372S1 JCPAC010 7H4385K019 Hi-rel 8936 45288 2167.1 MAS50 MAS-5010 1764 689 74845 8195 82583 8533