SCR 602
Abstract: "laser range finder" SCR AUTOMOTIVE APPLICATIONS SCR TRIGGER PULSE circuit UPGA301A SCR Gate Drive Board GE power SCR datasheet GE SCR ge scr package SCR TRIGGER PULSE
Text: UPGA301Ae3 Nanosecond SCR SWITCH SCOTTSDALE DIVISION KEY FEATURES DESCRIPTION Epoxy packaged, oxide passivated planar SCR chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond connection allows high current surge capability for narrow pulse
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UPGA301Ae3
UL94V-O
SCR 602
"laser range finder"
SCR AUTOMOTIVE APPLICATIONS
SCR TRIGGER PULSE circuit
UPGA301A
SCR Gate Drive Board
GE power SCR datasheet
GE SCR
ge scr package
SCR TRIGGER PULSE
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IRFF220
Abstract: TA9600 TB334
Text: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF220
TB334
TA9600.
IRFF220
TA9600
TB334
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF310
TB334
TA17444.
IRFF310
TB334
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SCR TRIGGER PULSE TRANSFORMER
Abstract: thyristor SCR1 SCR TRIGGER PULSE circuit SCR PULSE TRANSFORMER digital triggering scr RC inductive load thyristor design pulse transformer for triggering SCR SCR TRIGGER PULSE scr transformer drive gate PFN DIODE
Text: MicroNote #601 George Repucci Senior Applications Engineer Nanosecond SCR Switch for Reliable High Current Pulse Generators and Modulators Design requirements for modulator and pulse generator circuits include fast rise time, low jitter to enhance short radar or laser ranging
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UPGA301A
UPGA301A
SCR TRIGGER PULSE TRANSFORMER
thyristor SCR1
SCR TRIGGER PULSE circuit
SCR PULSE TRANSFORMER
digital triggering scr
RC inductive load thyristor design
pulse transformer for triggering SCR
SCR TRIGGER PULSE
scr transformer drive gate
PFN DIODE
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405a
Abstract: SL6360L
Text: SENSITRON _ SEMICONDUCTOR SL6360L TECHNICAL DATA DATA SHEET 261, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 7.5 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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SL6360L
405a
SL6360L
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5183
Abstract: 406L SL303100FR SL303100FRL
Text: SENSITRON _ SEMICONDUCTOR SL303100FR SL303100FRL TECHNICAL DATA DATA SHEET 5183, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 1000 VOLT, 20 AMP, 250 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS
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SL303100FR
SL303100FRL
5183
406L
SL303100FR
SL303100FRL
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TA17421
Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Text: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds
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IRF140
TA17421.
O-204AE
TA17421
IRF140 datasheet
IRF140
IRF140 INTERSIL
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TOT - 4301
Abstract: LA 4303 IRFD320 TA17404 TB334
Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD320
TB334
TA17404.
TOT - 4301
LA 4303
IRFD320
TA17404
TB334
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microchannel plate
Abstract: TP200 MICRON mcp
Text: Return To Product Page 51002 HIGH-TEMPERATURE ADVANCED PERFORMANCE TIME-OF-FLIGHT DETECTOR • High Performance, Fast Timing Detectors for TOF Mass Spectrometry • Bakeable to 350 C • Improved Mass Resolution • Sub-Nanosecond Pulse Widths • 18mm Collection Diameter
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TP200/JUN00
microchannel plate
TP200
MICRON mcp
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TA17441
Abstract: IRFF110 TB334
Text: IRFF110 Data Sheet March 1999 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 3.5A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF110
TB334
TA17441.
O-205AF
TA17441
IRFF110
TB334
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IRFD220
Abstract: TB334 la 4287
Text: IRFD220 Data Sheet July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 0.8A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD220
TB334
TA09600.
IRFD220
TB334
la 4287
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Untitled
Abstract: No abstract text available
Text: SENSITRON _ SEMICONDUCTOR S10A360 TECHNICAL DATA DATA SHEET 308, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 11 AMP, 5000 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING
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S10A360
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single phase full wave rectifier
Abstract: SL30360S7 SL30360S7L 2-56 unc
Text: SL30360S7 SL30360S7L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 192, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 20 AMP, 70 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS
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SL30360S7
SL30360S7L
single phase full wave rectifier
SL30360S7
SL30360S7L
2-56 unc
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j 201a
Abstract: No abstract text available
Text: GA200 GA200A GA201 GA201A SCRs Nanosecond Switching, Planar FEATURES • Rise Time; 10ns • Delay Time: 10ns • Recovery Time: 0.5 /is • Pulse Current: to 100A GB200 GB200A GB201 GB201A DESCRIPTION The Mlcroseml Nanosecond Thyristor Switch combines the turnon speed of logic level
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GA200
GA200A
GA201
GA201A
GB200
GB200A
GB201
GB201A
GA/GB200
j 201a
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Untitled
Abstract: No abstract text available
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar FEATURES • Rise Time: 10ns • Delay Time: 10ns • Recovery Time: 0.5/<s • Pulse Current: to 100A • Turn-on with 20ns, 10mA gate pulse GB300 GB300A GB301 GB301A DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the tum-on speed of logic level
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
GB300
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T018 Thyristor
Abstract: IC ST 201A
Text: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB20 0A GB201 GB201A FEA TU RES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turnon speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
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GA200
GA200A
GA201
GA201A
GB200
GB201
GB201A
GA/GB200
T018 Thyristor
IC ST 201A
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Untitled
Abstract: No abstract text available
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
GB300
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diode 944 lg
Abstract: B301A ga331 LT 943 diode 945 lg
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEA TU RES DESCRIPTION • • • • • Unitrode’s Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
20nst
GA300,
diode 944 lg
B301A
ga331
LT 943
diode 945 lg
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Diode LT 432
Abstract: rgk 20/2 GA300 GA301 GA301A GB301 CA301A GA300A GB300 GB300A
Text: SCRs GA300 GA300A GA301 GA301A Commercial Nanosecond Switching Planar GB300 GB300A GB301 GB301A FEATURES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
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GA300
GA300A
GA301
GA301A
GB300
GB300A
GB301
GB301A
GA300,
Diode LT 432
rgk 20/2
GA301A
CA301A
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GA201
Abstract: GB201 lcle 10 100S GA200 GA200A GA201A GB200 GB200A GB201A
Text: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB200A GB201 GB201A FEATU RES D ESCR IPTIO N • • • • • The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with the high current sw itching capability inherent in SCRs. With
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GA200
GB200
GA200A
GB200A
GA201
GB201
GA201A
GB201A
GA/GB200
GB201
lcle 10
100S
GB200
GB200A
GB201A
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Untitled
Abstract: No abstract text available
Text: IRFP250 Semiconductor Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 33A, 200V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFP250
O-247
085i2
TB334
TA9295.
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Untitled
Abstract: No abstract text available
Text: i 1N5806 1N5806US SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 158, REV B HERMETIC AXIAL LEAD RECTIFIER DESCRIPTION: 150 VOLT, 2.5 AMP, 25 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS specified._
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1N5806
1N5806US
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10VJ
Abstract: IRFP450 TA17435 TB334
Text: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFP450
TA17435.
IRFP450
O-247
10VJ
TA17435
TB334
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRF520
O-220AB
TB334
TA09594.
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