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    Micron Technology Inc NAND04GW3B2DN6E

    IC FLASH 4GBIT PARALLEL 48TSOP
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    DigiKey NAND04GW3B2DN6E Tray 576
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    Win Source Electronics NAND04GW3B2DN6E 1,400
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    STMicroelectronics NAND04GW3B2BN6E

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    Bristol Electronics NAND04GW3B2BN6E 2
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    NAND04GW3B2BN6E 2
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    Quest Components NAND04GW3B2BN6E 1
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    STMicroelectronics NAND04GW3B2BN6

    512MX8 FLASH 3V PROM, 35NS, PDSO48
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    Quest Components NAND04GW3B2BN6 4
    • 1 $15
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    NAND04GW3B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NAND04GW3B2AN1E Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND04GW3B2AN1E STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND04GW3B2B Numonyx 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND04GW3B2B STMicroelectronics 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Original PDF
    NAND04GW3B2D Numonyx 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Original PDF
    NAND04GW3B2DN6E Numonyx Memory, Integrated Circuits (ICs), IC FLASH 4GBIT 48TSOP Original PDF

    NAND04GW3B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JESD97

    Abstract: NAND04GW3B2B NAND08GW3B2A NAND04
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage


    Original     		NAND04GW3B2B NAND08GW3B2A Byte/1056 JESD97 NAND04GW3B2B NAND08GW3B2A NAND04 PDF

    block code error management, verilog

    Abstract: NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		NAND04GW3B2B NAND08GW3B2A Byte/1056 block code error management, verilog NAND08GW3B2A bad block block code error management, verilog source code JESD97 NAND04GW3B2B PDF

    NUMONYX

    Abstract: JESD97 NAND04GW3B2B NAND08GW3B2A
    Text: NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories Features • High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■


    Original     		NAND04GW3B2B NAND08GW3B2A Byte/1056 NUMONYX JESD97 NAND04GW3B2B NAND08GW3B2A PDF

    NAND04GW3B4

    Abstract: 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97
    Text: NAND04GW3B 4 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memory PRELIMINARY DATA Feature summary • High density NAND Flash Memory – 4 Gbit memory array – Up to 128 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface


    Original     		NAND04GW3B Byte/1056 NAND04GW3B4 4 bit microcontroller using vhdl bad block error correction code in vhdl vhdl code for 1 bit error generator JESD97 PDF

    ULGA52

    Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C PDF

    LGA-52

    Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		NAND04G-B2D, NAND08G-BxC byte/1056 LGA-52 LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint PDF

    HY27UU088G5M

    Abstract: HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		ST72681 512-byte 12MB/s ST72681/R12 ST72681 HY27UU088G5M HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08 PDF

    HY27UU088G5M

    Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		ST72681 LQFP48 HY27UU088G5M HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu PDF

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		ST72681 LQFP48 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    "NAND Flash"

    Abstract: AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand
    Text: AN1793 APPLICATION NOTE How to Use the Chip Enable Don’t Care Option in Single Level Cell NAND Flash Memories This Application Note describes how to use the Chip Enable Don’t Care feature, which is available in both the NANDxxx-A and NANDxxx-B families of Single Level Cell SLC NAND Flash memories, and outlines


    Original     		AN1793 128Mbits 25thout "NAND Flash" AN1793 NAND01GR3B NAND01GR4B NAND01GW3B NAND01GW4B NAND02GR3B NAND512W3B ST nand PDF

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B PDF

    p620 G8

    Abstract: HP 30 pin lcd flex cable pinout 24Mhz OSC003 adsp-527 XC9536XL-VQ44 HX1188 QFN28 4x4 socket P621 4gb MT48LC32M16 varitronix qvga
    Text: ADSP-BF527 EZ-KIT Lite Evaluation System Manual Revision 1.1, November 2007 Part Number 82-000208-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2007 Analog Devices, Inc., ALL RIGHTS RESERVED. This document


    Original     		ADSP-BF527 p620 G8 HP 30 pin lcd flex cable pinout 24Mhz OSC003 adsp-527 XC9536XL-VQ44 HX1188 QFN28 4x4 socket P621 4gb MT48LC32M16 varitronix qvga PDF

    verilog code hamming

    Abstract: c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code
    Text: AN1823 APPLICATION NOTE Error Correction Code in Single Level Cell NAND Flash Memories This Application Note describes how to implement an Error Correction Code ECC in ST Single Level Cell (SLC) NAND Flash memories, that can detect 2-bit errors and correct 1-bit errors per 256 or 512 Bytes.


    Original     		AN1823 Byte/1056 verilog code hamming c1823.zip an1823 hamming code 512 bytes SLC nand hamming code 512 bytes flash hamming ecc STMicroelectronics NAND256W3A hamming 7 bit hamming code error correction code PDF

    NAND FLASH TRANSLATION LAYER FTL

    Abstract: "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820
    Text: AN1821 APPLICATION NOTE Garbage Collection in Single Level Cell NAND Flash Memories This Application Note describes the Garbage Collection algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION


    Original     		AN1821 NAND FLASH TRANSLATION LAYER FTL "flash translation layer" Flash Translation Layer NAND02GW3B NAND02GW4B Wear Leveling in Single Level Cell NAND Flash Memory AN1821 NAND512R3B NAND512W3B AN1820 PDF

    AN1822

    Abstract: NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL
    Text: AN1822 APPLICATION NOTE Wear Leveling in Single Level Cell NAND Flash Memories This Application Note describes the Wear Leveling algorithm that ST recommends to implement in the Flash Translation Layer FTL software for NAND Flash memories. INTRODUCTION In ST NAND Flash memories each physical block can be programmed or erased reliably over 100,000


    Original     		AN1822 AN1822 NAND512W3A 64MB "nand flash memory" fat32 Wear Leveling in Single Level Cell NAND Flash Memory error free nand NAND FLASH 64MB Wear Leveling in Single Level Cell NAND Flash memories leveling FAT32 FLASH TRANSLATION LAYER FTL PDF

    LQ035Q1DH02

    Abstract: ACT-07-30008-000 xc95144xl-tq100 24Mhz OSC003 SWT023 ROTARY xc95144xltq100 NAND04GW3B2BN6E rotary encoder sharp 73 varistor ENB keypad 4x4 8pin
    Text: ADSP-BF527 EZ-KIT Lite Evaluation System Manual Revision 1.6, March 2010 Part Number 82-000208-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2010 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written


    Original     		ADSP-BF527 LQ035Q1DH02 ACT-07-30008-000 xc95144xl-tq100 24Mhz OSC003 SWT023 ROTARY xc95144xltq100 NAND04GW3B2BN6E rotary encoder sharp 73 varistor ENB keypad 4x4 8pin PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND04G-B2D NAND08G-BxC 2112-byte/1056-word TSOP48 PDF

    USOP48

    Abstract: VFBGA63 FBGA63 NAND08GW4B
    Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit USOP48 VFBGA63 FBGA63 NAND08GW4B PDF

    NAND512B

    Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
    Text: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES


    Original     		NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B Byte/1056 64Mbit NAND512B SD 1083 0.65mm pitch BGA NAND08G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 PDF

    block code error management, verilog

    Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
    Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array


    Original     		NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B Byte/1056 64Mbit block code error management, verilog flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63 PDF

    PIC16F84 usb schematic

    Abstract: adapter 12v 1a AT89S51 PLCC pin details difference between 8051 and AT89S51 application fuse cum power failure indicator tellus 68 AUCTOR 4017 motorola mnemonic code for AT89s51 PIC16F84 example codes for 12 pair LEDs in arrow
    Text: ChipProg Device Programmers User's Guide ChipProg-48 ChipProg-40 ChipProg-G4 ChipProg-ISP 2010 Phyton, Inc. Microsystems and Development Tools ChipProg Device Programmers © 2010 Phyton, Inc. Microsystems and Development Tools All rights reserved. No parts of this work may be reproduced in any form or by any means - graphic, electronic, or


    Original     		ChipProg-48 ChipProg-40 PIC16F84 usb schematic adapter 12v 1a AT89S51 PLCC pin details difference between 8051 and AT89S51 application fuse cum power failure indicator tellus 68 AUCTOR 4017 motorola mnemonic code for AT89s51 PIC16F84 example codes for 12 pair LEDs in arrow PDF

    NI3205

    Abstract: NAND04GW3B2
    Text: Numonyx NAND SLC large page 41 nm Discrete 4 Gbit, 2112 Byte/1056 Word page, x8/x16, 1.8 or 3 V, multiplane architecture Features – Cache read – Multiplane block erase • Density – 4 Gbit: 4096 blocks ■ NAND Flash interface – x8 or x16 bus width


    Original     		Byte/1056 x8/x16, NI3205 NAND04GW3B2 PDF

    LGA52

    Abstract: LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52
    Text: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage


    Original     		NAND04G-B2D, NAND08G-BxC byte/1056 TSOP48 LGA52 LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52 PDF