mc14569
Abstract: mc14094b MC14024B MC14555B
Text: CMOS Selection Guide by Function Device NAND Gates MC14011B MC14011UB MC14093B MC14023B Function Page Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Quad 2−Input NAND Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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MC14011B
MC14011UB
MC14093B
MC14023B
MC14042B
MC14043B
MC14044B
MC14076B
MC14175B
MC14013B
mc14569
mc14094b
MC14024B
MC14555B
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MT29C4G48MAZBBAKQ-48 IT
Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)
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168-Ball
MT29C4G48MAZBBAKQ-48
MT29C4G96MAZBBCJG-48
MT29C8G96MAZBBDJV-48
09005aef855512a5
168ball
MT29C4G48MAZBBAKQ-48 IT
MT29C8G96MAZBBDJV-48 IT
mt29c4g96
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751A-03
Abstract: 74AC ACT132 MC74AC132 MC74ACT132 74ACT132
Text: MC74AC132 MC74ACT132 Quad 2ĆInput NAND Schmitt Trigger QUAD 2-INPUT NAND SCHMITT TRIGGER The MC74AC/74ACT132 contains four 2-input NAND gates which are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. In addition, they have greater noise margin than conventional NAND gates.
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MC74AC132
MC74ACT132
MC74AC/74ACT132
MC74AC132/D*
MC74AC132/D
751A-03
74AC
ACT132
MC74AC132
MC74ACT132
74ACT132
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MT29F2G08AAD
Abstract: No abstract text available
Text: Micron Confidential and Proprietary 2Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F2G08AAD, MT29F2G16AAD, MT29F2G08ABD, MT29F2G16ABD Features Figure 1: • Open NAND Flash Interface ONFI 1.0-compliant • Single-level cell (SLC) technology
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MT29F2G08AAD,
MT29F2G16AAD,
MT29F2G08ABD,
MT29F2G16ABD
09005aef82784784
09005aef82784840
MT29F2G08AAD
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NAND512W3A2C
Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
Byte/264
TSOP48
VFBGA55
VFBGA63
ST MICROELECTRONICS
FBGA63
NAND512R4A2C
NAND512W4A2C
NAND512W3A2
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FBGA63
Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
byte/264
TSOP48
VFBGA55
VFBGA63
FBGA63
NAND512R4A2C
NAND512W4A2C
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NAND512-A2C
Abstract: NAND512A2C NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
512-Mbit,
528-byte/264-word
512-Mbit
TSOP48
VFBGA55
VFBGA63
NAND512-A2C
NAND512A2C
NAND512R4A2C
NAND512W4A2C
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NAND04GW3C2A
Abstract: NAND04GA3C2A TSOP48 outline JESD97 Wear Leveling in Single Level Cell NAND Flash Memory
Text: NAND04GA3C2A NAND04GW3C2A 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory Features • High density multi-level Cell MLC NAND Flash memories: – Up to 128 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND interface
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NAND04GA3C2A
NAND04GW3C2A
TSOP48
NAND04GW3C2A
NAND04GA3C2A
TSOP48 outline
JESD97
Wear Leveling in Single Level Cell NAND Flash Memory
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Untitled
Abstract: No abstract text available
Text: 54ACTQ10 54ACTQ10 Quiet Series Triple 3-Input NAND Gate Literature Number: SNOS582 54ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description The ’ACTQ10 contains three, 3-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output
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54ACTQ10
54ACTQ10
SNOS582
ACTQ10
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Untitled
Abstract: No abstract text available
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
512-Mbit,
528-byte/264-word
512-Mbit
TSOP48
VFBGA55
VFBGA63
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MM74C00
Abstract: MM74C00N MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C02 MM74C04 MM74C10
Text: MM54C00 MM54C02 MM54C04 MM54C10 MM54C20 MM74C00 Quad 2-Input NAND Gate MM74C02 Quad 2-Input NOR Gate MM74C04 Hex Inverter MM74C10 Triple 3-Input NAND Gate MM74C20 Dual 4-Input NAND Gate General Description Features These logic gates employ complementary MOS CMOS to
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MM54C00
MM54C02
MM54C04
MM54C10
MM54C20
MM74C00
MM74C02
MM74C04
MM74C10
MM74C20
MM74C00N
MM54C00
MM54C02
MM54C04
MM54C10
MM54C20
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10E CD74HCT10 HC10 HCT10 CD74HC10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10E
CD74HCT10
HC10
CD74HC10
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TTL 7440
Abstract: 9N38 74H40 74S140 74S40 9H40 9N37 9N40 9S40 TTL 7437
Text: 6006 74H40 9H 40/ 9N 37/ 7437 9N 38/ 7438 9N 40/ 7440 74S40 9S 40/ 74S140 96101 Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Any TTL Any TTL Dual 2-NAND Driver Any TTL Quad 2-NAND Driver Dual 2-NAND Driver Any TTL 96 106 Any TTL Dual 2-NAND Driver 50 0 Driver
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74H40
O-86A
74S40
74S140
TTL 7440
9N38
9H40
9N37
9N40
9S40
TTL 7437
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV50SI
EDI784MSV-RP
ECOU8274
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DC 5V to DC 100V CIRCUIT DIAGRAM
Abstract: smd transistor 2y lead side brazed hermetic UHD508 "Direct Replacement" 2Y SMD SG508 SG508H SMD 3B direct replacement
Text: SG508 SILICON GENERAL QUAD-NAND DRIVER LINEAR IN TEG R ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate
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SG508
SG508
500mA
UHD508
14-PIN
SG508H/883B
125-C
SG508H
DC 5V to DC 100V CIRCUIT DIAGRAM
smd transistor 2y
lead side brazed hermetic
"Direct Replacement"
2Y SMD
SMD 3B
direct replacement
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV
528-byte
I784M
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
250ms
minV50SI
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km29v040t
Abstract: yd 4145 km29v040 V040T
Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8
500us
400mil/0
KM29V040T
512Kx8bit
KM29V040
yd 4145
V040T
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Untitled
Abstract: No abstract text available
Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29N040T
512Kx8Bit
KM29N040T
32-byte
500us
120ns/byte.
KM29N040
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Untitled
Abstract: No abstract text available
Text: Advance Information KM29V64000TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND
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KM29V64000TS/RS
KM29V64000TS/RS
528-byte
200ns
KM29V64000
7Sb4142
00E442b
-TSOP2-400F
-TSQP2-400R
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array : 512K x8 Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
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Untitled
Abstract: No abstract text available
Text: Advance Information FLASH MEMORY KM29V64000TS/RS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000TS/RS is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its NAND
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KM29V64000TS/RS
200us
KM29V64000
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Untitled
Abstract: No abstract text available
Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
KM29V040
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