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    NAND FLASH SAMSUNG 2G Search Results

    NAND FLASH SAMSUNG 2G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    NAND FLASH SAMSUNG 2G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		PDF 108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A

    377H

    Abstract: No abstract text available
    Text: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The


    Original     		PDF HFDOM40S6Rxxx 40Pin 128MB HFDOM40S6Rxxx HFDOM40S6R-xxx DOM40S6R128 377H

    Untitled

    Abstract: No abstract text available
    Text: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The


    Original     		PDF HFDOM44S6Vxxx 44Pin 128MB HFDOM44S6Vxxx HFDOM44S6V-xxx seri2005)

    2Gbyte NAND flash

    Abstract: No abstract text available
    Text: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The


    Original     		PDF HFDOM40S6Vxxx 40Pin 128MB HFDOM40S6Vxxx HFDOM40S3V-xxx 2Gbyte NAND flash

    flash disk

    Abstract: SEC130
    Text: HANBit HFDOM44S6Rxxx 44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The


    Original     		PDF HFDOM44S6Rxxx 44Pin 128MB HFDOM44S6Rxxx HFDOM44S6R-xxx DOM44S6R128 flash disk SEC130

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    K9F2G08U0C-SCB0

    Abstract: K9F2G08U0C samsung k9f2g08U0C K9F2G08U0C-SCB K9G2G08U0C K9F2G08U0C-BCB0 K9F2G08U0B K9F2G08U0C-B K9G2G08U0 K9F2G08U0C-XCB0
    Text: Rev. 1.0, Jul. 2010 K9F2G08U0C 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F2G08U0C K9F2G08U0B 200us 700us K9F2G08U0C 250us 750us K9F2G08U0C-SCB0 samsung k9f2g08U0C K9F2G08U0C-SCB K9G2G08U0C K9F2G08U0C-BCB0 K9F2G08U0C-B K9G2G08U0 K9F2G08U0C-XCB0

    samsung k9f2g08U0C

    Abstract: K9F2G08U0C K9F2G08U0C-SCB0 K9F2G08U0B K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0
    Text: Rev. 0.2, May. 2010 K9F2G08U0C Advance 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F2G08U0C K9F2G08U0B 200us 700us K9F2G08U0C 250us 750us samsung k9f2g08U0C K9F2G08U0C-SCB0 K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0

    k9f1g08u0d

    Abstract: K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report
    Text: Rev. 0.1, May. 2010 K9F1G08U0D Advance 1Gb NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F1G08U0D K9F1G08U0C 200us 700us 250us 750us k9f1g08u0d K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report

    KBY00

    Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
    Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF KBY00U00VA-B450 A10/AP KBY00 LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp

    K9K8G08U0D

    Abstract: K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9K8G08U1D K9F4G08U0D K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB
    Text: Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB

    K9K8G08U0D

    Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
    Text: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010

    MCP 256M nand samsung mobile DDR

    Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
    Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF KA100O015E-BJTT A10/AP MCP 256M nand samsung mobile DDR MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp

    movinand

    Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
    Text: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller


    Original     		PDF BR-07-MEM-001 movinand samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash

    OneNAND

    Abstract: oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash
    Text: SEC-ONENAND-AN-001 Samsung OneNAND System Requirement Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Revision History Version 0.1 Date NOV-25-2004 Comment Initial version Author Seungeun Lee Approval Document Overview - Status: - Num of Pages:


    Original     		PDF SEC-ONENAND-AN-001 NOV-25-2004 OneNAND oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		PDF BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH

    TC58NVG3D4CTG10

    Abstract: TC58NVG3D4CTG tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC ADSP-BF53x
    Text: Engineer-to-Engineer Note a EE-302 Technical notes on using Analog Devices DSPs, processors and development tools Visit our Web resources http://www.analog.com/ee-notes and http://www.analog.com/processors or e-mail processor.support@analog.com or processor.tools.support@analog.com for technical support.


    Original     		PDF EE-302 ADSP-BF53x TC58NVG3D4CTG ADSP-BF533 ADSP-2126x EE-279) EE-302) TC58NVG3D4CTG10 tc58nvg3d4 tc58nvg3 tc58nvg3d4ct samsung MLC nand flashes toshiba MLC nand flash Datasheet toshiba NAND Flash MLC toshiba NAND Flash MLC

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: samsung rfs Extended Sector Remapper oneNand oneNand flash onenand block header BML STL NAND XSR onenand xsr samsung xsr
    Text: SEC- RFS1.2.1- PRE RFS v1.2.1 Pre-programming Guide 07-APR -2006 , Version 1.5 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer


    Original     		PDF 07-APR SAMSUNG NAND FLASH TRANSLATION LAYER samsung rfs Extended Sector Remapper oneNand oneNand flash onenand block header BML STL NAND XSR onenand xsr samsung xsr

    Flash Memory datasheet mmc

    Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) Flash Memory datasheet mmc TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 KFM1G16Q2M-DEB5

    KFW4G16Q2M-DEB5

    Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
    Text: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)


    Original     		PDF KFW4G16Q2M-DEB5) KFH2G16Q2M-DEB5) KFG1G16Q2M-DEB5) KFG1G16Q2M-DEB5 63FBGA KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 KFW4G16Q2M-DEB5 OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG KFG1G16Q2M-DEB5

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand