JESD218
Abstract: No abstract text available
Text: Intel Solid-State Drive DC S3700 Product Specification Capacity: 2.5-inch : 100/200/400/800 GB 1.8-inch : 200/400 GB Components: − Intel® 25nm NAND Flash Memory − High Endurance Technology HET Multi-Level Cell (MLC) Form Factor: 2.5- and 1.8-inch
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S3700
Power10
0000h
512-byte
328171-003US
JESD218
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Untitled
Abstract: No abstract text available
Text: TM September 2013 • Vybrid Controller F Series Summary − Target applications − Differentiating − Product − Use details cases − Enablement • features and partner solutions 2D-ACE Graphics Deep Dive if time permits TM 2 Kinetis Microcontrollers
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153km
MPC5606S
24-bit
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Untitled
Abstract: No abstract text available
Text: System On Module RainboW-G16M-µMXM Vybrid µMXM Module The RainboW-G16M-µMXM SOM is based on Freescale's Vybrid VF6xx/VF5xx family solution combining ARM Cortex-A5 and Cortex-M4 cores, which often eliminate the need for an external MCU for real time control applications.
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RainboW-G16M-Â
256MB
314-pin
iW-G16M-Â
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TC5816BDC
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 M bit NAND Electrically E rasable and Program m able Read Only Memory (NAND Flash EEPROM) w ith spare 64 K X 8 bits. The device is organized as 264 bytes
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TC5816BDC
TC5816
264-byte,
264-byte
FDC-22
\n\Q-51â
TC5816BDC
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b8331
Abstract: No abstract text available
Text: KM29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND
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KM29V32000TS/RS
250us
32000T
b8331
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes
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TC5816BDC
TC5816
264-byte,
264-byte
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Untitled
Abstract: No abstract text available
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999
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KM29W32000T,
KM29W32000IT
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Untitled
Abstract: No abstract text available
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final 1.1 Data Sheet, 1999 April 10th 1999 Final
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KM29W32000TS
KM29W32000
2000A
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY KM29U64000T, KM29U64000IT 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : 8M ♦ 256K bit x 8bit - Data Register : (512 + 16)bit x8b# • Automatic Program and Erase
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KM29U64000T,
KM29U64000IT
528-Byte
200ns
KM29V64000
KM29N64000
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Untitled
Abstract: No abstract text available
Text: IN TEG RA TED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 AFT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816AFTâ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.
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KM29V16000ATS/RS
6000A
264-byte
250ns
0D242Ã
Figure15
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000AT/R is a 2M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (65,536)x8 bit. Its N AND
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KM29N16000AT/R
16000AT/R
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Untitled
Abstract: No abstract text available
Text: KM29W040AT, KM29W040AIT FLASH MEMORY Document TitSe 512K x 8 bit NAND Flash Memory Revision History R evisio n No. H isto ry D raft Date R em ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed O perating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V
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KM29W040AT,
KM29W040AIT
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KM29du
Abstract: No abstract text available
Text: Advanced Information FLASH MEMORY KM29DU256T, KM29DU256IT 32M X 8 Bit NAND Flash Memory R evisio n No. H isto ry 0.0 Initial issue. D raft Date R em ark Nov. 26th 1998 Advanced Information Changed specifications from 128Mb to 256Mb ITEM KM 29U128T/IT Nop 10 cycles
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KM29DU256T,
KM29DU256IT
128Mb
256Mb
29U128T/IT
29DU256T/IT
29U256DT/IDT
29DU256T/IT
KM29du
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Untitled
Abstract: No abstract text available
Text: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Tifie 4M X 8 Bit NAND Flash Memory Revision HSsiorv Revision No. History Draft Date Remark Advanced Information Final 0.0 Initial issue. April 10th 1998 0.1 Data Sheet, 1999 April 10th 1999 1 Added CE dont care m ode during the data-loading and reading
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KM29W32000AT,
KM29W32000AIT
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41RB
Abstract: No abstract text available
Text: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL DATA TO SH IBA M O S DIGITAL INTEGRATED CIRCUIT TC5816 AFT SILICON GATE CM O S 16 M BIT 2 M x 8 BITS CM O S NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816AFT--
41RB
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Untitled
Abstract: No abstract text available
Text: KM29V16000AT, KM29V16000AIT FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Data Sheet, 1.0 1. 2. 3. 4. 1.1 1997. Data Sheet, 1998. Changed I b e r s p a ra m e te r: 5ms Typ. —» 2ms(Typ ).
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C
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KM29N16000ET/R
16000E
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03f hall
Abstract: No abstract text available
Text: KM29V32000T, KM29V32000IT FLASH MEMORY Document Xiflo 4M x 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBERS p a ra m e te r: 5m s Typ. —> 2m s(Typ.) 2. Removed reverse type package.
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KM29V32000T,
KM29V32000IT
KM29V32000
KM29N32000
KM29W32000
03f hall
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KM29U256T
Abstract: KM29U256 29U256
Text: KM29U256T, KM29U256IT Advanced Information FLASH MEMORY Document Title 32M x 8 Bit NAND Flash Memory Revision History Revision No. 0.0 History DraftDate Remark Initial issue. April.10th 1999 Advanced Information The attached datasheets are prepared and approved by S AM SU N G Electronics. S AM SU N G Electronics CO., LTD. reserve the right
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KM29U256T,
KM29U256IT
1024K
48-PIN
KM29U256T
KM29U256
29U256
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EM 319
Abstract: em319 GD5434
Text: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array
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KM29V32000T/R
250us
\256Byte\
bH14H
EM 319
em319
GD5434
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KM29N16000A
Abstract: DD2423 KM29N16000ATS
Text: PRELIM INARY FLASH M EM ORY KM 29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM 29N 16000A TS /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • O rganization Flash m em ory w ith a spare 6 4K (6 5 ,5 3 6 )x8 bit. Its N AND
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KM29N16000ATS/RS
250us
DDSM233
KM29N16000A
Figure14
lbm42
002M534
DD2423
KM29N16000ATS
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Untitled
Abstract: No abstract text available
Text: KM29N16000ETS/RS FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt S upply T h e K M 2 9 N 1 6 0 0 0 E T S /R S is a 2 M (2 ,0 9 7 ,1 5 2 )x 8 b it • W ide Tem perature O peration : -25'C - +85'C
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KM29N16000ETS/RS
Figure14
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC5816BDC TENTATIVE T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N G A T E C M O S 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E^PROM DESCRIPTION T he TC5816 device is a single 5.0-volt 16 M bit NAND E lectrically E rasable an d P rogram m able R ead
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TC5816BDC
TC5816
264-byte,
264-byte
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