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    N5822 Search Results

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    N5822 Price and Stock

    STMicroelectronics 1N5822RL

    DIODE SCHOTTKY 40V 3A DO201AD
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    DigiKey 1N5822RL Reel 19,000 1,900
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    1N5822RL Cut Tape 2,691 1
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    Mouser Electronics 1N5822RL 7,754
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    TME 1N5822RL 1,920 5
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    ComSIT USA 1N5822RL 9,500
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    Vishay Semiconductors 1N5822-E3/73

    DIODE SCHOTTKY 40V 3A DO201AD
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    DigiKey 1N5822-E3/73 Ammo Pack 5,000 1,000
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    1N5822-E3/73 Cut Tape 137 1
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    onsemi 1N5822G

    DIODE SCHOTTKY 40V 3A AXIAL
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    DigiKey 1N5822G Bulk 4,083 1
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    Avnet Americas 1N5822G Bulk 1,712 16 Weeks 500
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    Mouser Electronics 1N5822G 22,505
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    Rochester Electronics 1N5822G 15,242 1
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    TME 1N5822G 16 3
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    Flip Electronics 1N5822G 27,500
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    New Advantage Corporation 1N5822G 2,000 1
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    EIC Semiconductor Inc 1N5822T/R

    DIODE SCHOTTKY 40V 3A DO201AD
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    DigiKey 1N5822T/R Reel 2,500 1,250
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    onsemi 1N5822RLG

    DIODE SCHOTTKY 40V 3A AXIAL
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    DigiKey 1N5822RLG Cut Tape 1,859 1
    • 1 $0.63
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    Avnet Americas 1N5822RLG Reel 4,500 16 Weeks 1,500
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    Mouser Electronics 1N5822RLG 19,745
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    Bristol Electronics 1N5822RLG 1,335
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    1N5822RLG 2,983
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    1N5822RLG 550 23
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    1N5822RLG 5,843
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    Rochester Electronics 1N5822RLG 557 1
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    TME 1N5822RLG 1,515 5
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    Avnet Asia 1N5822RLG 16 Weeks 4,500
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    New Advantage Corporation 1N5822RLG 3,000 1
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    N5822 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor m1104

    Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
    Text: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms


    Original     		PDF filt05 transistor m1104 transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182

    kerko

    Abstract: n5392 PF220 B37979 CN1000 N1222 kerko 68 pf N1120 N5181 NF-39
    Text: Bedrahtete Kondensatoren, EIA-Standard C0G ● ● ● ● Bedrahtete Kondensatoren, EIA-Standard ● Bedrahtete Kondensatoren, CECC-Standard Eigenschaften Temperaturstabil Hoher Isolationswiderstand Kleiner Verlustfaktor Induktivitätsarm Anwendungen ●


    Original     		PDF -G1220-J51 -G1270-J51 -G1330-J51 -G1390-J51 -G1470-J51 -G1560-J51 -G1680-J51 -G1820-J51 -G1101-J51 -G1121-J51 kerko n5392 PF220 B37979 CN1000 N1222 kerko 68 pf N1120 N5181 NF-39

    D501

    Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
    Text: Inhaltsverzeichnis Bestellnummernverzeichnis Seite 5 8 Lieferübersicht Elektrische Kurzdaten 11 26 Standard-Chip-Kondensatoren Slim-Line Kondensatoren 27 55 Bedrahtete Kondensatoren, EIA-Standard Bedrahtete Kondensatoren, CECC-Standard 59 68 Allgemeine technische Angaben


    Original     		PDF

    n1222

    Abstract: n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter
    Text: Multilayer Leaded Capacitors, EIA Standard C0G/NP0/CH Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering,


    Original     		PDF B37979-N B37986-N -N1681-K54 -N1821-K54 -N1102-K54 -G1100-K54 -G1120-K54 -G1150-K54 -G1180-K54 -G1220-K54 n1222 n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter

    n5822

    Abstract: 1N5820 1N5821 1N5822 A475
    Text: :m ic g n d u c to r T m 1N5Ô20 - 1 N5822 Features 1.0 min 25.4 • 3.0 ampere operation at T A = 95 °C with no therm al runaway. Dimensions in inches (mm) • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.


    OCR Scan     		PDF -1N5822 DO-201 n5822 1N5820 1N5821 1N5822 A475

    N5822

    Abstract: N5821 lN5822 1N5820 1N5821 1N5822 D0201AD
    Text: 3 Amp Schottky Rectifier 1N 5820,1 N5821,1 N5822 : £ Dim. Inches Minimum .188 1.00 .285 .046 A B C D M illim e te r Maximum Minimum .260 Maximum Notes 4.78 25.4 7.24 1.17 - .375 .056 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number


    OCR Scan     		PDF N5821 N5822 D0201AD 1N5820 1N5821 1N5822 1N5822 88ristics N5822 lN5822 D0201AD

    N5822

    Abstract: No abstract text available
    Text: : m ic q n d u c to r T m 1N5820 -1 N5822 Features 1.0 m in • 3.0 ampere operation at T A = 95°C with no therm al runaway. • For use in low voltage, high freq u e n cy inverters free wheeling, and polarity protection applications. 25.4 Dimensions in


    OCR Scan     		PDF 1N5820-1N5822 1N5820 N5822 N5822

    1N5820

    Abstract: 1N5821 1N5822
    Text: O JGD 1N5820 th ru 1 N5822 3 .0 AMPS. SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 40 volts CURRENT 3.0 Amperes D O -2Q1A D FEATURES T * Low forward voltage drop * High current capability .210 5 . 3 . 190 (4 . 8 ) * High reliability 1 .0 ( 25 . 4 ) MIN.


    OCR Scan     		PDF 1N5820 1N5822 D0-201 MIL-STD-202, 10grams 1N5821 1N5822

    n5822

    Abstract: N5820 1N5820-1 1N5820 1N5821 1N5822
    Text: 1N5820 - 1 N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS Features_ • • • • • • • Schottky Barrier Chip G uard Ring Die C onstruction for T ransient Protection Low Power Loss, High Efficiency High Surge C apability High C urrent C apability and Low Forward


    OCR Scan     		PDF 1N5820 -1N5822 MIL-STD-202, DS23003 N5820-1N5822 n5822 N5820 1N5820-1 1N5821 1N5822

    1N5822 SMA

    Abstract: 1N5820 SMA N5821 1N5821 N5822 1N5820 1N5822 D0201AD
    Text: 3 Amp Schottky Rectifier 1N5820,1 N5821,1 N5822 : r Dim . Inches Minimum .188 1.00 .285 .046 A B C D M illim e te r Maximum Minimum .260 - .375 .056 Maxim um Notes 4.78 25.4 7.24 1.17 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD Microsenni Catalog Number


    OCR Scan     		PDF N5821 N5822 D0201AD 1N5820 1N5821 1N5822 1N5820, 1N5821, 1N5822 1N5822 SMA 1N5820 SMA N5822 D0201AD

    1N5322

    Abstract: oasis 1N582 1N5820 1N5821 1N5822 10i25
    Text: E TAIWAN SEMICONDUCTOR 1N5820 - 1 N5822 3.0 AMPS. Schottky Barrier Rectifiers DÛ-201AD tà RoHS C O M P L IA N C E .220 ¡5.61 .197 ¡S.Dl Features ❖ •4❖ ❖ ❖ ❖ ❖ Low power less, high efficiency. High current capability. Low VF. High reliability


    OCR Scan     		PDF 1N5820 1N5822 -201AD MIL-STD-202, 1N5322 oasis 1N582 1N5821 1N5822 10i25

    n5822

    Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
    Text: 1N5820 - 1 N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward


    OCR Scan     		PDF 1N5820 -1N5822 MIL-STD-202, D0-201 DS23003 1N5820-1N5822 n5822 1N5821 1N5822

    lm2567t

    Abstract: S8360 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a N5822 cq047 UPL1J101MRH nichicon fx 230v to 6v step down transformer 230v to 75v 25w transformer BEL 100p transistor datasheet
    Text: a t i o n a l S e m i c o n d u c t o r 9 LM 2587 SIM PLE SW ITCHER* 5A Flyback R egulator General Description Features The LM 2587 series of regulators are m onolithic integrated circuits specifically designed for flyback, step-up (boost , and forw ard co nve rter applications. The device is available


    OCR Scan     		PDF LM2587 LM2587 20-3A 212-11B1 lm2567t S8360 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a N5822 cq047 UPL1J101MRH nichicon fx 230v to 6v step down transformer 230v to 75v 25w transformer BEL 100p transistor datasheet

    TC125501

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC 125 TC 126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators fur­ nish output currents to a maximum of 80 mA (V|N = 2V, V o u t = 3V) with typical efficiencies above 80%. These


    OCR Scan     		PDF TC125/6 TC126 OT-23A TC125 TC126 D-82152 TC125501

    Untitled

    Abstract: No abstract text available
    Text: 19-1075; R e v 0; 6 /9 6 jv \ / \ y a jv \ 5 V /3 .3 V or A djustable, 100% Duty-Cycle, High-Efficiency; Step-Down DC-DC Controllers Features ♦ Low Dropout Voltage These step-dow n controllers drive an external P-channel MOSFET, allowing design flexibility for a pplications


    OCR Scan     		PDF 300kHz) 004in.

    AX651

    Abstract: I9430 max651
    Text: AI/JXIAI 5 V / 3 . 3 V / 3 V or A d j u s t a b l e , H i g h - E f f i c i e n c y , L o w IQ, S t e p - D o w n DC-DC C o n t r o l l e r s T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching freq u e n cy up to 300kHz allows


    OCR Scan     		PDF MAX649/MAX651 /MAX652 MAX649/MAX651/MAX652 AX651 I9430 max651

    n5822

    Abstract: No abstract text available
    Text: 1N5820 - N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS /uTE M ir I POWERSEMICONDUCTOR J Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Etticiency High Surge Capability


    OCR Scan     		PDF 1N5820 1N5822 D0-201 MIL-STD-202, DS23003 1N5820-1N5822 n5822

    n5822

    Abstract: variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY MAX770-MAX773 MAX773
    Text: y k iy jx iy i/i 5 V / 1 2 V / 1 5 V or A d j u s t a b l e , Hi gh-Effici ency, Low IQ, St ep- Up DC- DC Controll ers T hese ICs use tiny external co m p o n e n ts. T he ir high sw itch in g fre q u e n cie s up to 300kH z a llo w surfacem ount m agnetics of 5mm height and 9mm diameter.


    OCR Scan     		PDF MAX770-MAX773 110pA 300kH AX770/M AX771 AX772 MAX773 MAX773 n5822 variable resistor 727M 5V712 3055el tp3055 TP3055EL TP3055E 941ODY

    LM2576-15

    Abstract: RL2445 AIE MAGNETICS LM2576 step up converter 50W006 LM2576 transformer LM2576 input 220 ac output 30v dc 0.5a K04A diode DQ06
    Text: S3 National Semiconductor December 1990 LM1576-15/LM2576-15 Simple Switcher 3 Amp Step-Down Voltage Regulator General Description Features The LM1576 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down


    OCR Scan     		PDF LM1576-15/LM2576-15 LM1576 is-7001 LM2576-15 RL2445 AIE MAGNETICS LM2576 step up converter 50W006 LM2576 transformer LM2576 input 220 ac output 30v dc 0.5a K04A diode DQ06

    LM2576 isolated

    Abstract: lm2576 application note lm2576 current mode socket-8112-AG7 LM2576BT AUGAT 8112-AG7 LM2576 APPLICATION lm2576 415-0926 LM2576 micrel
    Text: LM2576 52kHz Simple 3A Buck Voltage Regulator General Description Features The LM2576 series of monolithic integrated circuits provide all the active functions for a step-down buck switching regulator. Fixed versions are available with a3.3V, 5V, or 12V


    OCR Scan     		PDF LM2576 52kHz T0-220 O-220 000nb2 O-263 LM2576 isolated lm2576 application note lm2576 current mode socket-8112-AG7 LM2576BT AUGAT 8112-AG7 LM2576 APPLICATION 415-0926 LM2576 micrel

    n5822

    Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		PDF 1N5820/D 1N5820 1N5821 1N5822 1N5B22 n5822 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820

    10MF

    Abstract: AN5820 AN5822 SC13 tv block diagram 13KHZ
    Text: LINEAR MONOLITHIC INTEGRATED CIRCUITS IV^ 3 r UI Electrical Characteristics Function Type No. Sound IVI u ltip le x Signal Maximum Ratings T a = 2 5 °C P r o c e s s in g Condition Symbol Item (T a = 2 5 °C ) m in. typ. max. Unit 20 mA C ir c u it ( V CC = 1 2 V )


    OCR Scan     		PDF AN5820 300m\V AN582I 14-Lead AN5822 10MF AN5820 AN5822 SC13 tv block diagram 13KHZ

    Motorola TE 2556

    Abstract: S9430 TE 2556 MAX649CSA 7411 3 INPUT AND gate 915 DCDC plv nichicon si9430 ic Siliconix mosfet guide dcdc smta resistor
    Text: 19-0225; Rev 3; 9/97 -•ssg T 5 V / 3 . 3 V / 3 V or Adjustable, High-Efficiency, Low IQ, S te p-D ow n DC-DC Controllers T hese d e v ic e s use m in ia tu re e xte rn a l co m p o n e n ts . Their high sw itching freq u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.


    OCR Scan     		PDF MAX649/MAX651 /MAX652 300kHz) Motorola TE 2556 S9430 TE 2556 MAX649CSA 7411 3 INPUT AND gate 915 DCDC plv nichicon si9430 ic Siliconix mosfet guide dcdc smta resistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan     		PDF 1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 1N5821