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    N0603 Price and Stock

    Vishay Thin Film

    Vishay Thin Film PTN0603E7502BST1

    RES 75K OHM 0.1% 0.15W 0603
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    DigiKey PTN0603E7502BST1 Reel 26,000 1,000
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    Vishay Thin Film PTN0603E8002BST1

    RES 80K OHM 0.1% 0.15W 0603
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    DigiKey PTN0603E8002BST1 Reel 7,000 1,000
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    Vishay Thin Film PTN0603E4992BST1

    RES 49.9K OHM 0.1% 0.15W 0603
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    DigiKey PTN0603E4992BST1 Digi-Reel 4,284 1
    • 1 $0.49
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    PTN0603E4992BST1 Cut Tape 4,284 1
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    PTN0603E4992BST1 Reel 3,000 1,000
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    Vishay Thin Film PTN0603E1000BST1

    RES 100 OHM 0.1% 0.15W 0603
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    DigiKey PTN0603E1000BST1 Digi-Reel 2,352 1
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    PTN0603E1000BST1 Cut Tape 2,352 1
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    PTN0603E1000BST1 Reel 2,000 1,000
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    Vishay Thin Film PTN0603E7501BST1

    RES 7.5K OHM 0.1% 0.15W 0603
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    DigiKey PTN0603E7501BST1 Digi-Reel 1,025 1
    • 1 $0.49
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    • 1000 $0.29698
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    PTN0603E7501BST1 Cut Tape 1,025 1
    • 1 $0.49
    • 10 $0.405
    • 100 $0.3357
    • 1000 $0.29698
    • 10000 $0.29698
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    PTN0603E7501BST1 Reel 1,000 1,000
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    N0603 Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    N0603N-S23-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO-262 Original PDF

    N0603 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0603N R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)


    Original     		N0603N R07DS0559EJ0100 N0603N N0603N-S23-AY O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet N0603N R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)


    Original     		N0603N R07DS0559EJ0100 N0603N N0603N-S23-AY O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS Technical Data Data Sheet N0603, Rev. - MMBD4448W SURFACE MOUNT FAST SWITCHING DIODE Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •


    Original     		MMBD4448W N0603, PDF

    sl8z4

    Abstract: diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412
    Text: A B C D LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA Project code: 91.4Q801.001 PCB P/N : 55.4Q801.XXX REVISION : 06210-2 (Hannstar, ACCL) G792 Yonah 478 1.83G/2G/2.16G 4, 5 3 19 PCB STACKUP TOP TVO HOST BUS 400/533/667MHz LVDS DDR2 533/667MHz


    Original     		TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz TPS51100 sl8z4 diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412 PDF

    U0805F104ZCT

    Abstract: U0805R103KNT U0603C101JNT N0805R105KNT U0805R102KNT U0805R472KNT T0603F104ZNT 2CZ5U U0603R103KCT B0805
    Text: Nickel Barrier Multilayer Ceramic Capacitors Features: • Multilayer ceramic chip capacitor. • Nickel barrier termination. • High performance and reliability. • 0603, 0805, and 1206 case size. Rated Voltage Code Rated Voltage A 100 B 16 T 25 U 50 Part Dimension


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Büros, Vertretungen und Distributoren Technical Offices, Agents and Distributors 1 4r Inland National T ech n isch e Bü ro s und V p r t r p tijn q i 08/98 Bayern Telegärtner Technisches Büro München Udo Rösch Bgm.-Grandauer-Straße 5 83052 Bruckmühl


    OCR Scan     		CH-8132 TR-81257 D-71144 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPCOS Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, controlled capacitance series Series/Type: Date: November 2010 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the


    OCR Scan     		n0603 n0805 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPCOS Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, high-speed series Series/Type: Date: November 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    OCR Scan     		n0201 n0402 n0603 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    sl8z4

    Abstract: diagram HANNSTAR j mv 4 M54P PDTA144E g792 sl8yb hy5ps561621afp-25 EC565 diagram HANNSTAR k mv M54-p
    Text: 本图纸版权属原厂家所有 A 仅在服务该产品使用者时使用 B C LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA 19 PCB STACKUP TOP 400/533/667MHz LVDS DDR2 533/667MHz 533 MHz 11,12 DDR2 Calistoga Ver.:A3 :71.945PM.A0U / QK58


    Original     		TPS51120 CV125PA 83G/2G/2 400/533/667MHz 4Q801 TPS51124 533/667MHz 945PM sl8z4 diagram HANNSTAR j mv 4 M54P PDTA144E g792 sl8yb hy5ps561621afp-25 EC565 diagram HANNSTAR k mv M54-p PDF

    Untitled

    Abstract: No abstract text available
    Text: EPCOS Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, low capacitance series Series/Type: Date: November 2012 ŒPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    OCR Scan     		n0603 n0805 PDF