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    N02L163WN1AT2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    N02L163WN1AT2 NanoAmp Solutions 2Mb Ultra-Low Power Asynchronous CMOS SRAM Original PDF
    N02L163WN1AT2-55I NanoAmp Solutions 2Mb Ultra-Low Power Asynchronous CMOS SRAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview Features The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access


    Original     		PDF N02L163WN1A 16bit N02L163WN1A

    N02L163WN1AB2

    Abstract: N02L163WN1AT N02L163WN1A N02L163WN1AB N02L163WN1AT2
    Text: AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview • Single Wide Power Supply Range 2.3 to 3.6 Volts


    Original     		PDF N02L163WN1A 16bit N02L163WN1A N02L163WN1AB2 N02L163WN1AT N02L163WN1AB N02L163WN1AT2