Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Search Results

    N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF511

    Abstract: Bf513
    Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect


    Original     		PDF BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513

    BF510

    Abstract: BF511 BF512 BF513
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect


    Original     		PDF BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513

    BF545A_BF545B_BF545C

    Abstract: BF545B
    Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.


    Original     		PDF BF545A; BF545B; BF545C BF545A) BF545A BF545A_BF545B_BF545C BF545B

    Untitled

    Abstract: No abstract text available
    Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.


    Original     		PDF BF556A; BF556B; BF556C BF556A

    Untitled

    Abstract: No abstract text available
    Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.


    Original     		PDF BF545A; BF545B; BF545C BF545A) BF545A

    BF556A_BF556B_BF556C

    Abstract: No abstract text available
    Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.


    Original     		PDF BF556A; BF556B; BF556C BF556A BF556A_BF556B_BF556C

    pmbfj310

    Abstract: No abstract text available
    Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION


    Original     		PDF PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310

    BF545A

    Abstract: BF545B BF545C
    Text: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PDF BF545A; BF545B; BF545C MSC895 BF545A) BF545A BF545B BF545C

    mrc145

    Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149
    Text: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PDF BF556A; BF556B; BF556C MSC895 mrc145 MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149

    J112

    Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"
    Text: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA


    OCR Scan     		PDF T0-92 350mW VDS40 80x69477 3-/T10371 J112 Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"

    J113

    Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na"
    Text: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage


    OCR Scan     		PDF 350mW vds40 00x69477 J113 J112 Field Effect Transistors j112 ltd J111 "igss 1 na"

    MMT3823

    Abstract: micro-T Package
    Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is


    OCR Scan     		PDF MMT3823 100-MHz MMT3823 micro-T Package

    MPF4391

    Abstract: MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391
    Text: MPF4391, MPF4392, MPF4393 SILICON SILICON N-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (T yp e A ) Junction F ield -E ffect Transistors designed for chopper and high-speed switching applications.


    OCR Scan     		PDF MPF4391, MPF4392, MPF4393 MPF4391 MPF4392 MPF4391 MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391

    2N3822

    Abstract: 2N3822 equivalent J2N3822
    Text: 2N3822 A_ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency am plifier applications. The 2 N 3 8 2 2 features low gate


    OCR Scan     		PDF 2N3822 2N3822 100ms 2N3822 equivalent J2N3822

    Untitled

    Abstract: No abstract text available
    Text: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


    OCR Scan     		PDF bbS3T31 BFR101A BFR101B

    J111

    Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112
    Text: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.


    OCR Scan     		PDF 750fiforJ111 1550n 3150i2forJ113 M89-1044/RC J111 J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112

    Untitled

    Abstract: No abstract text available
    Text: BF410A to D _ J\ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.


    OCR Scan     		PDF BF410A BF410 BF410B; BF410C BF410D;

    yn 1018

    Abstract: MPF820 RS-50S Scans-00100834
    Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.


    OCR Scan     		PDF MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834

    u175

    Abstract: MPF112
    Text: MPF 112 SILICON SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Depletion Mode (Type A ) device designed fo r V H F am plifier and mixer applications. • Low Cross-Modulation Distortion • Low Transfer Capacitance - C rss = 3.0 pF (Typ) @ V q $ = 10 Vdc


    OCR Scan     		PDF MPF112 u175 MPF112

    PN4393

    Abstract: PN4391 PN4392
    Text: PN4391 PN4392 PN4393 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical n-channel junction field-effect transistors in plastic TO-92 envelopes with the gate connected to the case. The transistors are intended for use in analog switches, commutators and


    OCR Scan     		PDF PN4391 PN4392 PN4393 PN4393

    Untitled

    Abstract: No abstract text available
    Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment.


    OCR Scan     		PDF BC264A tjtiS3T31 0D3S715

    BF410

    Abstract: BF410C
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field- effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. BF41OA to D


    OCR Scan     		PDF BF410 BF41OA BF410A BF410C BF410D;

    BF512

    Abstract: BF510 marking code 513
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and


    OCR Scan     		PDF BF510) BF511) BF512) BF513) BF510 BF511 BF512 BF513 BF510 MAM33S BF512 marking code 513