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    BF556A; Search Results

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    BF556A; Price and Stock

    NXP Semiconductors BF556A,235

    RF MOSFET JFET 30V SOT23
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    DigiKey BF556A,235 Reel 10,000
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    NXP Semiconductors BF556A,215

    RF MOSFET JFET 30V SOT23
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    DigiKey BF556A,215 Digi-Reel 1
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    BF556A,215 Cut Tape
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    Quest Components BF556A,215 1,015
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    BF556A,215 1,015
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    BF556A,215 11,640
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    BF556A,215 11,640
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    NXP Semiconductors BF556A235

    Trans JFET N-CH 30V 7mA 3-Pin TO-236AB T/R - Tape and Reel (Alt: BF556A,235)
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    Avnet Americas BF556A235 Reel 10,000
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    Bristol Electronics BF556A 1,269
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    BF556A; Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF556A NXP Semiconductors BF556A - N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556A Philips Semiconductors N-Channel Silicon Junction Field-Effect Transistor Original PDF
    BF556A Philips Semiconductors N-Channel Field Effect Transistor Original PDF
    BF556A Philips Semiconductors N-Channel Silicon Junction Field Effect Transistor Scan PDF
    BF556A,215 NXP Semiconductors BF556 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal Original PDF
    BF556A,215 NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BF556A,235 NXP Semiconductors BF556A - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
    BF556A,235 NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BF556AT/R NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms Original PDF
    BF556A T/R Philips Semiconductors FET Transistor, N Channel, ID 7mA, Tape and Reel Original PDF
    BF556ATR Philips Semiconductors N-channel silicon junction field-effect transistor Original PDF