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    N-CHANNEL MOSFET 600V 1A Search Results

    N-CHANNEL MOSFET 600V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 600V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fqt1n60

    Abstract: FQT1N60C 1A 300V mosfet
    Text: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQT1N60C FQT1N60C OT-223 fqt1n60 1A 300V mosfet

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    Mosfet

    Abstract: SSF2N60D1
    Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D1 O-252 O-252ï Mosfet SSF2N60D1

    Untitled

    Abstract: No abstract text available
    Text: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD1N60M/SVD1N60T O-251-3L 30TYP O-220-3L

    L2N600

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter


    Original     		PDF L2N600 L2N600

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter


    Original     		PDF L2N60

    DB-193

    Abstract: TFF2N60 TO-220FP-3
    Text: TAK CHEONG N-Channel Power MOSFET 2A, 600V, 4.6Ω 1 = Gate 2 = Drain 3 = Source 1 2 General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 DB-193 TFF2N60 TO-220FP-3

    Untitled

    Abstract: No abstract text available
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60

    FQD1N60C

    Abstract: FQU1N60C
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C FQU1N60C

    FQPF1N60C

    Abstract: No abstract text available
    Text: TM FQP1N60C / FQPF1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP1N60C FQPF1N60C FQPF1N60C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C

    FQU1N60C

    Abstract: No abstract text available
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C FQU1N60C

    fqu1N60C

    Abstract: FQD1N60C
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C fqu1N60C

    N-Channel mosfet 600v 1a

    Abstract: BLV1N60 1A 300V mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET
    Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV1N60 N-Channel mosfet 600v 1a BLV1N60 1A 300V mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

    1A 300V mosfet

    Abstract: BLV1N60 N-Channel mosfet 600v 1a
    Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV1N60 1A 300V mosfet BLV1N60 N-Channel mosfet 600v 1a

    Untitled

    Abstract: No abstract text available
    Text: BLV1N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 8Ω Ω • Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.


    Original     		PDF BLV1N60

    Untitled

    Abstract: No abstract text available
    Text: KSMD1N60C / KSMU1N60C 600V N-Channel MOSFET TO-251 TO-252 Features • • • • • • 1A, 600V, RDS on = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSMD1N60C KSMU1N60C O-251 O-252 correc20 30TYP

    p2n60

    Abstract: f2n60 pjp2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS
    Text: PJP2N60 / PJF2N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS ON =4.6Ω@VGS=10V, ID=1A TO-220AB ITO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJP2N60 PJF2N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 p2n60 f2n60 n60p mosfet 600v 10a to-220ab diode marking GA PJF2N60 2A600VRDS

    FQT1N60C

    Abstract: fqt1n60 *1N60C N-Channel mosfet 600v 1a
    Text: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N60C FQT1N60C fqt1n60 *1N60C N-Channel mosfet 600v 1a

    FQT1N60C

    Abstract: fairchild MOSFET reliability report
    Text: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N60C FQT1N60C FQT1N60CTF OT-223-4 fairchild MOSFET reliability report

    Untitled

    Abstract: No abstract text available
    Text: QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5Ω Features Description • RDS on = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQT1N60C FQT1N60C

    Mosfet

    Abstract: SSF2N60
    Text: SSF2N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF2N60 O-220 withstanSSF2N60 Mosfet SSF2N60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		PDF QW-R502-053