Untitled
Abstract: No abstract text available
Text: TAK CHEONG N-Channel Power MOSFET 2.1A, 600V, 5.6Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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Original
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O-220FP
DB-100
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PDF
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DB-193
Abstract: TFF2N60 TO-220FP-3
Text: TAK CHEONG N-Channel Power MOSFET 2A, 600V, 4.6Ω 1 = Gate 2 = Drain 3 = Source 1 2 General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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Original
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O-220FP
DB-100
DB-193
TFF2N60
TO-220FP-3
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PDF
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