CT15SM-24
Abstract: No abstract text available
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L CT15SM-24 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE GENERAL INVERTER • UPS USE CT15SM-24 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX.
|
Original
|
CT15SM-24
CT15SM-24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala
|
Original
|
MN04L
L20IS
SMN04L
SMN04L2
04L20
06-JAN-12
KSD-T6Q017-000
|
PDF
|
thyristor cdi
Abstract: CS 15 thyristor gct thyristor thyristor 400A power thyristor 1000A FGC400A-130DS CS thyristor cs 6 GATE TURN OFF THYRISTOR 400 V 100 A 3000V
Text: MITSUBISHI GCT Gate Commutated Turn-off THYRISTOR ARY FGC400A-130DS MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH POWER INVERTER USE PRESS PACK TYPE FGC400A-130DS OUTLINE DRAWING Dimensions in mm
|
Original
|
FGC400A-130DS
thyristor cdi
CS 15 thyristor
gct thyristor
thyristor 400A
power thyristor 1000A
FGC400A-130DS
CS thyristor cs 6
GATE TURN OFF THYRISTOR 400 V 100 A
3000V
|
PDF
|
FL12KM-7A
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET ARY FL12KM-7A MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
|
Original
|
FL12KM-7A
FL12KM-7A
|
PDF
|
VN370SP
Abstract: No abstract text available
Text: VN370SP TRIPLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V DSS R DS on I OUT channel VN370SP 60V 60V 60V 0.25 Ω 1.7 Ω 1.7 Ω 1A 0.3A 0.3A 1 2 3 • ■ ■ ■ ■ ■ ■ ONE 2.4A (MAX) CHANNEL TWO 0.36A (MAX) CHANNELS THREE TTL INPUTS
|
Original
|
VN370SP
VN370SP
SO-10
|
PDF
|
MUX pmi
Abstract: No abstract text available
Text: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • • JFET Switches Rather Than CMOS Low “O N ” Resistance . 220Ü Typ
|
OCR Scan
|
MUX-08/MUX-24
MUX-24
106dB
101dB
400Hz
MUX pmi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 □ FEATURES • • • • • • • • JFET Switches Rather Than CMOS Low “O N ” Resistance . 220fl Typ
|
OCR Scan
|
MUX-08/MUX-24
220fl
UX-08
DGS08,
HI-508A,
IH5108,
IH6108,
LF11508/12508/13508,
AD7506
UX-24
|
PDF
|
FRO 24N
Abstract: MUX24FQ x08A
Text: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • J F E T Sw itches Rather Than C M O S Low “ O N ” Resistance . 220Ü Typ
|
OCR Scan
|
MUX-08/MUX-24
106dB
101dB
FRO 24N
MUX24FQ
x08A
|
PDF
|
NTE1460
Abstract: NTE1458 RC network NTE1453
Text: N TE 1,43155=1 G005D a3 1 17E ELECTRONICS INC 2-CHANNEL LOW NOISE, EQUALIZER AMP, Vcc=30V AUDIO PWR AMP, 1W 14-LEAD DIP, SEE DIAG 247 NTE1451 7-LEAD SIP, SEE DIAG 215 NTE14S2 FRONT VIEW U Bypass— Chan 2 Input— RC N etw o rkBypass— Chan 2 O u tp u tFeedback—
|
OCR Scan
|
G005D
T-90-01
14-LEAD
NTE1451
NTE14S2
NTE1453
E1454
NTE1458
NTE1460
RC network
NTE1453
|
PDF
|
FRO 24N
Abstract: 08EP UX-24 MUX24
Text: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • JFET Switches Rather Than CMOS • Low “ ON” Resistance . 220Ü Typ • Highly Resistant to Static Discharge Damage
|
OCR Scan
|
MUX-08/MUX-24
MUX-24)
MUX-24
106dB
101dB
400Hz
FRO 24N
08EP
UX-24
MUX24
|
PDF
|
MUX pmi
Abstract: LF11508 MUX24 pmi mux24 24ae pmi mux 08 AD7506 DG508 HI-508A HI-509A
Text: ► A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • JFET Switches Rather Than CMOS Low “ON” Resistance . 2200 Typ
|
OCR Scan
|
MUX-08/MUX-24
220il
MUX-08
DG508,
HI-508A,
IH5108,
IH6108,
LF11508/12508/13508,
AD7506
MUX-24
MUX pmi
LF11508
MUX24
pmi mux24
24ae
pmi mux 08
AD7506
DG508
HI-508A
HI-509A
|
PDF
|
pmi mux08
Abstract: MUX pmi UX-24 PMI MUX28 AD7506 DG508 DG509 HI-508A HI-509A IH6108
Text: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEA TU R ES • • • • • • • J F E T Sw itches Rather Than C M O S Low “ O N ” Resistance . 220Ü Typ
|
OCR Scan
|
MUX-08/MUX-24
MUX-08
DG508,
HI-508A,
IH5108,
IH6108,
LF11508/12508/13508,
AD7506
MUX-24
DG509,
pmi mux08
MUX pmi
UX-24
PMI MUX28
AD7506
DG508
DG509
HI-508A
HI-509A
IH6108
|
PDF
|
HM-TR
Abstract: COP404C COP401L 881412 diode SKE 4F
Text: COP414L/COP314L 0 3 National S al Semiconductor COP414L/COP314L Single-Chip N-Channel Microcontrollers General Description Features The COP414L Sir>gle-Chip N-Channel Microcontrollers are members of the COPStm family, fabricated using N-chan nel, silicon gate MOS technology. This Controller Oriented
|
OCR Scan
|
COP414L/COP314L
COP414L
HM-TR
COP404C
COP401L
881412
diode SKE 4F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Micmsemi m m m RF Products a P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Features 2 - 400 MHz 30 WATTS 28 VOLTS
|
OCR Scan
|
MS4280
206nH
150MHz
MSC0894
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA M G800J1US51 TOSHIBA GTR MODULE SILICON N CHAN N EL IGBT MG 8 0 0 J 1 US51 HIGH POWER SW ITCHING APPLICATIO NS M OTOR CO N TRO L APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancem ent-M ode • High Speed : t f= 0 .3 0 ,« s Max. ( Iç = 800A)
|
OCR Scan
|
G800J1US51
MG800J1US51
|
PDF
|
p12n60c3
Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
Text: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the
|
OCR Scan
|
HGTP12N60C3,
HGT1S12N60C3,
HGT1S12N60C3S
T1S12N60C3
T1S12N60C3S
p12n60c3
p12n60
P12N60C
T1S12
HRP1560
s12n
S12N60C3
HGTP12N60
S12N60C
|
PDF
|
5 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS
|
OCR Scan
|
MS4550
MS4550
MSC0895
5 watt hf mosfet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR 3 MASS L.ÔE J> • i43G2271 0050201 bT7 H H A S HGTP12N60D1 12A, 600V N-Chan nel IG BT December 1993 Package Features • 12 Amp, 600 Volt JEDEC TO-220AB TOP VIEW • Latch Free Operation • Typical Fdll Time <500ns COLLECTOR FLANG E
|
OCR Scan
|
i43G2271
HGTP12N60D1
O-220AB
500ns
|
PDF
|
G6N50
Abstract: g6n50e
Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HARRIS S E M I C O N D U C T O R 6A, 400V and 500V N-Chan nel IG BTs March 1997 Features Packages HG TD6N 40E1, HGTD6N50E1 JEDEC TO-2S1 AA • 6 A, 4 0 0 V a n d 5 0 0 V • V CE ON : 2 . 5 V M a x . E M IT T E R
|
OCR Scan
|
HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTD6N50E1
HGTD6N40E1
HGTD6N50E1S
G6N50
g6n50e
|
PDF
|
PIC1650-020
Abstract: ER1400 equivalent ER1400 4-digit seven segment display pic 100x14 AY-3-2012 AY-3-8475 CT2012 CT2017 IN914
Text: INSTRUM ENT PIC1650-020 ER1400 Economega IV TV PPL Tuning System Control E R 1 4 0 0 • Autom atic S w eep Tuning Option (with Autom atic Fin e Tune) ■ Fin e Tun e in 5 0K H z S te p s ( Manual o r A utom atic) ■ T w o Digit Chan nel N um ber D isp lay
|
OCR Scan
|
PIC1650-020
ER1400
ER1400)
PIC1650-020
30jnjnjnjnjijiJi
ER1400 equivalent
ER1400
4-digit seven segment display pic
100x14
AY-3-2012
AY-3-8475
CT2012
CT2017
IN914
|
PDF
|
for1a
Abstract: 2SJ143 J22G
Text: N E C ELECTRONICS INC "tö deT| b 4 a ? 5 E S 3 | ~ 7 ^ —3 ^^-1 <J oonoTs P R E L I M I N A R Y S F E C IF IC A T iC ‘ MOS F I E L D E F F E C T T R A N S I S ELECTRON DEVICE 2 S J 1 4 3 F A S T S W I T C H I N G P - CHAN N EL S I L I C O N PO W ER PACKAGE DIM ENSION S
|
OCR Scan
|
2SJ143
J22ga6
for1a
2SJ143
J22G
|
PDF
|
20ng0c3
Abstract: 20NG0 20n60c 20n60c3 20N60C3R 20n60c* equivalent TG20N60C3R 20N 443 20NG0C3R
Text: HARRIS S E M I C O N D U C T O R H G T G 2 0 N 6 0 C 3 R , H G T P 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R S 40A, 600V, Ru gg ed UFS Series N-Chan nel IG BTs January 1997 F ea tu res Description • 40A, 600V T j = 2 5°C This family of IGBTs was designed for optimum performance
|
OCR Scan
|
1-800-4-H
20ng0c3
20NG0
20n60c
20n60c3
20N60C3R
20n60c* equivalent
TG20N60C3R
20N 443
20NG0C3R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ¿57 ¡m e r a « VN370B TRIPLE CHANNEL HIGH SIDE SMART _POWER SOLID STATE RELAY TARGET DATA TYP E VN370B V dss 60V 60V 60V R D S o n lo U T channel 0.25 a 1.7 Q. 1.7 a 1A 0.3A 0.3A 2 3 1 . ONE 2.4A (MAX) CHANNEL . TWO 0.36A (MAX) CHANNELS
|
OCR Scan
|
VN370B
|
PDF
|
VN370SP
Abstract: No abstract text available
Text: SGS-THOMSON ilL d C T ^ O lO O i V N 3 7 0 S P TRIPLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss R VN370SP 60V 60V 60V 0.25 a 1.7 Û 1.7 a d S o ii loUT channel 1A 0.3A 0.3A 1 2 3 . . . . . ONE 2.4A (MAX) CHANNEL TWO 0.36A (MAX) CHANNELS
|
OCR Scan
|
VN370SP
VN370SP
0D7fcicl55
|
PDF
|
