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    Text: TOSHIBA M G800J1US51 TOSHIBA GTR MODULE SILICON N CHAN N EL IGBT MG 8 0 0 J 1 US51 HIGH POWER SW ITCHING APPLICATIO NS M OTOR CO N TRO L APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancem ent-M ode • High Speed : t f= 0 .3 0 ,« s Max. ( Iç = 800A)


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    G800J1US51 MG800J1US51 PDF