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    T1S12N60C3 Price and Stock

    Renesas Electronics Corporation HGT1S12N60C3D

    - Bulk (Alt: HGT1S12N60C3D)
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    Avnet Americas HGT1S12N60C3D Bulk 4 Weeks 272
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    • 1000 $1.30697
    • 10000 $1.27015
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    Renesas Electronics Corporation HGT1S12N60C3S9AR4501

    - Bulk (Alt: HGT1S12N60C3S9AR45)
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    Avnet Americas HGT1S12N60C3S9AR4501 Bulk 4 Weeks 230
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    Renesas Electronics Corporation HGT1S12N60C3R

    - Bulk (Alt: HGT1S12N60C3R)
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    Avnet Americas HGT1S12N60C3R Bulk 4 Weeks 277
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    Renesas Electronics Corporation HGT1S12N60C3

    - Bulk (Alt: HGT1S12N60C3)
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    Avnet Americas HGT1S12N60C3 Bulk 4 Weeks 234
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    • 1000 $1.5194
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    onsemi HGT1S12N60C3DS

    24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HGT1S12N60C3DS Bulk 4 Weeks 173
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    • 1000 $1.972
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    T1S12N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p12n60c3

    Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, T1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent

    p12n60c3

    Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
    Text: i n t e HGTP12N60C3, T1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123

    p12n60c3

    Abstract: S12N60C3
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, T1S12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3