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    N MOSFET 400V 100A Search Results

    N MOSFET 400V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 400V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFP350 O-247 IRFP350 TB334

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF330 TA17414. IRFF330 TA17414 TB334

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    IRFP350

    Abstract: TB334
    Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP350 TA17434. IRFP350 TB334

    IRFD320

    Abstract: TA17404 TB334
    Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD320 IRFD320 TA17404 TB334

    IRFF310

    Abstract: TB334
    Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF310 IRFF310 TB334

    IRFF320

    Abstract: TA17404 TB334
    Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF320 TA17404. IRFF320 TA17404 TB334

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF330 TA17414. O-205AF IRFF330 TA17414 TB334

    IRF330

    Abstract: TA17414 TB334 204AA
    Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF330 TA17414. IRF330 TA17414 TB334 204AA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		PDF 18N40 18N40 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T 18N40L-TF2-T 18N40G-TF2-T 18N40L-T47-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		PDF 18N40 18N40 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T 18N40L-T47-T 18N40G-T47-T O-220

    "MOSFET" 400V

    Abstract: mosfet 18n40 "MOSFET" 400V, 18N40 18n40l mosfet 400V 18N40
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		PDF 18N40 18N40 18N40L-T47-T 18N40G-T47-T O-247 QW-R502-389 "MOSFET" 400V mosfet 18n40 "MOSFET" 400V, 18N40 18n40l mosfet 400V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		PDF 18N40 O-220 18N40 O-220F1 O-247 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T

    IRFP340

    Abstract: TA17424 TB334
    Text: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFP340 O-247 IRFP340 TA17424 TB334

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFF330 Features 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF330

    P11NK40ZFP

    Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
    Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP


    Original     		PDF STB11NK40Z STP11NK40ZFP STP11NK40Z O-220 O-220FP STB11NK40Z O-220FP O-220 P11NK40ZFP P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds


    Original     		PDF UF740 O-220F1 O-220F2 O-220F O-220 O-263 QW-R502-078.

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40

    Untitled

    Abstract: No abstract text available
    Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 1 STP11NK40ZFP 400V <0.55Ω


    Original     		PDF STB11NK40Z, STP11NK40ZFP STP11NK40Z O-220, O-220FP, STB11NK40Z O-220FP O-220

    FDD3N40TM

    Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDD3N40 FDU3N40 FDD3N40TM FDD3N40TF FDU3N40 FDU3N40TU

    P11NK40ZFP

    Abstract: p11nk40z transistor p11nk40z 8936 B11NK B2 marking code Zener zener diode 3.0 b2 STB11NK40Z 8936 v 3 STP11NK40Z
    Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP 400V


    Original     		PDF STB11NK40Z, STP11NK40ZFP STP11NK40Z O-220, O-220FP, STB11NK40Z O-220FP O-220 P11NK40ZFP p11nk40z transistor p11nk40z 8936 B11NK B2 marking code Zener zener diode 3.0 b2 STB11NK40Z 8936 v 3 STP11NK40Z

    IRFD310

    Abstract: TB334
    Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310 IRFD310 TB334

    IRFD310

    Abstract: TB334 400V to 6V DC Regulator TO 220 Package
    Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFD310 IRFD310 TB334 400V to 6V DC Regulator TO 220 Package

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD3N40 FDU3N40