IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP350
O-247
IRFP350
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF330
TA17414.
IRFF330
TA17414
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP350
TA17434.
IRFP350
TB334
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IRFD320
Abstract: TA17404 TB334
Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD320
IRFD320
TA17404
TB334
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF310
IRFF310
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF330
TA17414.
O-205AF
IRFF330
TA17414
TB334
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IRF330
Abstract: TA17414 TB334 204AA
Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF330
TA17414.
IRF330
TA17414
TB334
204AA
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in
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18N40
18N40
18N40L-TA3-T
18N40G-TA3-T
18N40L-TF1-T
18N40G-TF1-T
18N40L-TF2-T
18N40G-TF2-T
18N40L-T47-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in
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18N40
18N40
18N40L-TA3-T
18N40G-TA3-T
18N40L-TF1-T
18N40G-TF1-T
18N40L-T47-T
18N40G-T47-T
O-220
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"MOSFET" 400V
Abstract: mosfet 18n40 "MOSFET" 400V, 18N40 18n40l mosfet 400V 18N40
Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in
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18N40
18N40
18N40L-T47-T
18N40G-T47-T
O-247
QW-R502-389
"MOSFET" 400V
mosfet 18n40
"MOSFET" 400V, 18N40
18n40l
mosfet 400V
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in
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18N40
O-220
18N40
O-220F1
O-247
18N40L-TA3-T
18N40G-TA3-T
18N40L-TF1-T
18N40G-TF1-T
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IRFP340
Abstract: TA17424 TB334
Text: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFP340
O-247
IRFP340
TA17424
TB334
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Untitled
Abstract: No abstract text available
Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFF330 Features 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF330
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P11NK40ZFP
Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP
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STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O-220
O-220FP
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
P11NK40
P11NK40Z
transistor p11nk40z
P11NK
B11NK40
STB11NK40ZT4
STP11NK40Z
STP11NK40ZFP
JESD97
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds
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UF740
O-220F1
O-220F2
O-220F
O-220
O-263
QW-R502-078.
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3n40
Abstract: No abstract text available
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD3N40
FDU3N40
FDU3N40
FDD3N40TF
FDD3N40TM
3n40
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Untitled
Abstract: No abstract text available
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 1 STP11NK40ZFP 400V <0.55Ω
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STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
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FDD3N40TM
Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDD3N40
FDU3N40
FDD3N40TM
FDD3N40TF
FDU3N40
FDU3N40TU
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P11NK40ZFP
Abstract: p11nk40z transistor p11nk40z 8936 B11NK B2 marking code Zener zener diode 3.0 b2 STB11NK40Z 8936 v 3 STP11NK40Z
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP 400V
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STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
p11nk40z
transistor p11nk40z
8936
B11NK
B2 marking code Zener
zener diode 3.0 b2
STB11NK40Z
8936 v 3
STP11NK40Z
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IRFD310
Abstract: TB334
Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
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IRFD310
Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
400V to 6V DC Regulator TO 220 Package
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDD3N40
FDU3N40
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