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    N CHANNEL MOSFET INSULATED Search Results

    N CHANNEL MOSFET INSULATED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET INSULATED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS83 M74

    Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor


    Original     		PDF BSS83 OT143 BSS83 M74 mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83

    depletion MOSFET

    Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor


    Original     		PDF BSD22 OT143 depletion MOSFET n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    Untitled

    Abstract: No abstract text available
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared


    Original     		PDF TMF3201J OT-363 TMF3201J OT-363

    1E14

    Abstract: 2E12 OM130STC 51W diode
    Text: OM130STC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package


    Original     		PDF OM130STC 1000K 300msec, OM130S O-257AA 1E14 2E12 OM130STC 51W diode

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		PDF bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion

    transistor BD 339

    Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
    Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.


    OCR Scan     		PDF 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341

    Untitled

    Abstract: No abstract text available
    Text: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF BSS83 OT143

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    Untitled

    Abstract: No abstract text available
    Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF 711002b BSS83 OT143

    BSD215

    Abstract: bsd214 BSD212 BSD213 transistor BD 341
    Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high


    OCR Scan     		PDF BSD212 BSD215 BSD213 BSD215 BSD214 DDb7717 B5D212 transistor BD 341

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion

    transistor d 1557

    Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
    Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF D25fel2 BSS83 OT143 Z87623 7Z92669 transistor d 1557 BSS83 BR B6S M74 marking philips bss83 BSS83 M74

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V

    DIODE 6AA

    Abstract: 1E14 2E12 OM130STC 51W diode
    Text: OM13QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE N-CHANNEL 100V, 10 Amp, N-Channel, Radiation Hardened Power MOSFET In A Hermetic Meta! Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package


    OCR Scan     		PDF OM13QSTC 1000K OM130S O-257AA 014fn 534-5776FAX 000124D DIODE 6AA 1E14 2E12 OM130STC 51W diode

    transistor BD 430

    Abstract: Depletion
    Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology


    OCR Scan     		PDF D/-37-' UFN1130

    Untitled

    Abstract: No abstract text available
    Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF 0D17S4 BSD10 BSD12

    ufn730

    Abstract: UFN731
    Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN730 UFN731 UFN732 UFN733

    depletion MOSFET

    Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
    Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.


    OCR Scan     		PDF BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ

    bsd214

    Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
    Text: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high


    OCR Scan     		PDF titiS3T31 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 philips bsd215 KT 117 diode t7e L7E transistor IEC134