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    MTTF TEST DATA Search Results

    MTTF TEST DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    FO-62.5LPBMT0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBMT0-001 MT-RJ Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet

    MTTF TEST DATA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MTTF

    Abstract: VC-706 failure rate VC70 VC706
    Text: VC-706 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following


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    VC-706 MTTF failure rate VC70 VC706 PDF

    VCC6

    Abstract: MTTF MTTF test data
    Text: VCC6 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following


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    VCC1

    Abstract: MTTF MTTF test data
    Text: VCC1 SERIES FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following


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    MTTF

    Abstract: No abstract text available
    Text: CMOS Phase Locked Loop Reliability Data HPLL-8001 Description The following cumulative test results have been obtained from testing performed for HewlettPackard Communication Semiconductor Solutions Division in accordance with the latest revi- sion of MIL-STD-883. Data was


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    HPLL-8001 MIL-STD-883. M2015 M2010 M2016 MIL-STD-883 M3015 5968-0321E MTTF PDF

    MTTF

    Abstract: AT-3XXXX wk 3 25 transistor DOD-HDBK-1686
    Text: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the


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    MIL-STD-883. 10-9/hrs. MIL-STD-750 HPGSS-12-107 MIL-STD-202, DOD-HDBK-1686 AT-3XX11/3XX33 MTTF AT-3XXXX wk 3 25 transistor PDF

    mosfet mttf

    Abstract: MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


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    MRF6VP11KH MRF6VP11KHR6 mosfet mttf MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR PDF

    HPMX-3002

    Abstract: M2003 M2015
    Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP internal GSS methods. Data was


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    HPMX-3002 MIL-STD-883 M1010 M1011 M2015 M2003 DOD-HDBK-1686 MIL-STD-202, HPMX-3002 M2003 M2015 PDF

    MTTF

    Abstract: MTTF test data ina series
    Text: Silicon Bipolar Monolithic Amplifier Reliability Data INA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the


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    MIL-STD-883. To-883 DOD-HDBK-1686 MIL-STD-202, MTTF MTTF test data ina series PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the


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    MIL-STD-883. GSS-12-107 MIL-STD-202, DOD-HDBK-1686 AT-3XX11/3XX33 5963-3564E 5965-8917E PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Noise Gallium Arsenide FET Reliability Data ATF-10XXX ATF-13XXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the


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    ATF-10XXX ATF-13XXX MIL-STD-883. Ambie11 5966-0233E 5966-2942E PDF

    I 6506

    Abstract: 5091-8326E HRS108
    Text: Silicon Bipolar Monilithic Amplifiers Reliability Data MSA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the


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    MIL-STD-750. MIL-STD-202, DOD-HDBK-1686 I 6506 5091-8326E HRS108 PDF

    HFBr reliability

    Abstract: HFBR-1521 MIL-STD-690 HFBR-2521 MTTF HFBR-0501 HFBR-15xx
    Text: Agilent HFBR-0501 Series Versatile Link Plastic Fiber Optic Transmitter and Receiver Reliability Data Sheet Transmitters: HFBR-1521, 1522, 1524, 1531, 1532 Receivers: HFBR-2521, 2522, 2524, 2531, 2532 Introduction Agilent Technologies’ quality system includes an ongoing


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    HFBR-0501 HFBR-1521, HFBR-2521, HFBR-1521 HFBR-2521 5988-4042EN HFBr reliability HFBR-1521 MIL-STD-690 HFBR-2521 MTTF HFBR-15xx PDF

    ina-01

    Abstract: No abstract text available
    Text: Silicon Bipolar Monolithic Amplifier Reliability Data INA-01/02/03/10 Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the


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    INA-01/02/03/10 MIL-STD-883. Te260 MIL-STD-202, DOD-HDBK-1686 5962-7978E 5968-6301E ina-01 PDF

    Hp 2564

    Abstract: M-1004 INA-51063 INA-52063 M2003 Hp+2564
    Text: Low Noise Silicon MMIC Amplifiers Reliability Data INA-51063 INA-52063 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability


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    INA-51063 INA-52063 MIL-STD-883. M1004 M1010 M2003 M2031 MILSTD-202, DOD-HDBK-1686 Hp 2564 M-1004 INA-51063 INA-52063 M2003 Hp+2564 PDF

    250GX-0300-55-22

    Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT
    Text: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


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    MRF6VP11KH MRF6VP11KHR6 250GX-0300-55-22 CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT PDF

    MCCFR0W4J0102A50

    Abstract: MRF6VP11KH mccfr0w4j CPF32 MRF6VP11KHR6 MRF6VP11KGSR5
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial,


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    MRF6VP11KH MRF6VP11KHR6 MRF6VP11KGSR5 MCCFR0W4J0102A50 mccfr0w4j CPF32 MRF6VP11KGSR5 PDF

    AT-41511

    Abstract: AT-41533
    Text: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability


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    AT-41511 AT-41533 MIL-STD-883. MIL-STD-750 MIL-STD-202, DOD-HDBK-1686 AT-41511/41533 AT-41511 AT-41533 PDF

    Untitled

    Abstract: No abstract text available
    Text: HPMX-2006, HPMX-2007 Integrated Circuits Reliability Data HPMX-2006 HPMX-2007 Description The following cumulative test results have been obtained from testing performed at HewlettPackard Company. Data was gathered from the product qualification, reliability monitor,


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    HPMX-2006, HPMX-2007 HPMX-2006 HPMX-2007 MIL-STD-202, DOD-HDBK-1686 5968-0731E PDF

    MTTF

    Abstract: AT-41511
    Text: NPN Silicon Bipolar Transistor Reliability Data AT-4xxxx The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability


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    MIL-STD-883. MIL-STD-202, DOD-HDBK-1686 AT-41511/41533 5966-0933E 5988-9788EN MTTF AT-41511 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability


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    AT-41511 AT-41533 MIL-STD-883. VC200 MIL-STD-202, DOD-HDBK-1686 AT-41511/41533 5963-5127E 5966-0933E PDF

    IAM-8XXXX

    Abstract: MTTF
    Text: Silicon Bipolar Active Mixer Reliability Data IAM-8XXXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability


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    MIL-STD-883. DOD-HDBK-1686 MIL-STD-202, IAM-8XXXX MTTF PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


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    MRF6VP11KH MRF6VP11KHR6 PDF

    Hp 2564

    Abstract: DOD-HDBK-1686
    Text: warn H E W L E T T miCM P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP inter­


    OCR Scan
    HPMX-3002 MIL-STD-883 DOD-HDBK-1686 MIL-STD-202, Hp 2564 PDF

    XLO8

    Abstract: diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A DOD-HDBK-1686 hp 5082-2900 diode
    Text: WhoI H EW L E T T 1 "KM PA CK A R D Tri Metal Beam Lead Schottky Diodes Reliability Data HSCH-5300 Series HSCH-5500 Series Conclusion Hewlett-Packard’s beam lead diodes have successfully passed stringent environmental testing. Hewlett-Packard beam lead diodes may be used in military


    OCR Scan
    HSCH-5300 HSCH-5500 MIL-STD-750 1051C DOD-HDBK-1686 XLO8 diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A hp 5082-2900 diode PDF