MTTF
Abstract: VC-706 failure rate VC70 VC706
Text: VC-706 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following
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VC-706
MTTF
failure rate
VC70
VC706
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VCC6
Abstract: MTTF MTTF test data
Text: VCC6 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following
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VCC1
Abstract: MTTF MTTF test data
Text: VCC1 SERIES FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following
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MTTF
Abstract: No abstract text available
Text: CMOS Phase Locked Loop Reliability Data HPLL-8001 Description The following cumulative test results have been obtained from testing performed for HewlettPackard Communication Semiconductor Solutions Division in accordance with the latest revi- sion of MIL-STD-883. Data was
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HPLL-8001
MIL-STD-883.
M2015
M2010
M2016
MIL-STD-883
M3015
5968-0321E
MTTF
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MTTF
Abstract: AT-3XXXX wk 3 25 transistor DOD-HDBK-1686
Text: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the
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MIL-STD-883.
10-9/hrs.
MIL-STD-750
HPGSS-12-107
MIL-STD-202,
DOD-HDBK-1686
AT-3XX11/3XX33
MTTF
AT-3XXXX
wk 3 25 transistor
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mosfet mttf
Abstract: MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical
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MRF6VP11KH
MRF6VP11KHR6
mosfet mttf
MRF6VP11KH
MRF6VP11KHR6
tuo-4
AN1955
T491X226K035AT
capacitor mttf
FAIR-RITE 2743021447
EKME
MCCFR
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HPMX-3002
Abstract: M2003 M2015
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP internal GSS methods. Data was
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HPMX-3002
MIL-STD-883
M1010
M1011
M2015
M2003
DOD-HDBK-1686
MIL-STD-202,
HPMX-3002
M2003
M2015
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MTTF
Abstract: MTTF test data ina series
Text: Silicon Bipolar Monolithic Amplifier Reliability Data INA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the
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MIL-STD-883.
To-883
DOD-HDBK-1686
MIL-STD-202,
MTTF
MTTF test data
ina series
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Untitled
Abstract: No abstract text available
Text: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the
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MIL-STD-883.
GSS-12-107
MIL-STD-202,
DOD-HDBK-1686
AT-3XX11/3XX33
5963-3564E
5965-8917E
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Untitled
Abstract: No abstract text available
Text: Low Noise Gallium Arsenide FET Reliability Data ATF-10XXX ATF-13XXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the
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ATF-10XXX
ATF-13XXX
MIL-STD-883.
Ambie11
5966-0233E
5966-2942E
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I 6506
Abstract: 5091-8326E HRS108
Text: Silicon Bipolar Monilithic Amplifiers Reliability Data MSA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the
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MIL-STD-750.
MIL-STD-202,
DOD-HDBK-1686
I 6506
5091-8326E
HRS108
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HFBr reliability
Abstract: HFBR-1521 MIL-STD-690 HFBR-2521 MTTF HFBR-0501 HFBR-15xx
Text: Agilent HFBR-0501 Series Versatile Link Plastic Fiber Optic Transmitter and Receiver Reliability Data Sheet Transmitters: HFBR-1521, 1522, 1524, 1531, 1532 Receivers: HFBR-2521, 2522, 2524, 2531, 2532 Introduction Agilent Technologies’ quality system includes an ongoing
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HFBR-0501
HFBR-1521,
HFBR-2521,
HFBR-1521
HFBR-2521
5988-4042EN
HFBr reliability
HFBR-1521
MIL-STD-690
HFBR-2521
MTTF
HFBR-15xx
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ina-01
Abstract: No abstract text available
Text: Silicon Bipolar Monolithic Amplifier Reliability Data INA-01/02/03/10 Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the
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INA-01/02/03/10
MIL-STD-883.
Te260
MIL-STD-202,
DOD-HDBK-1686
5962-7978E
5968-6301E
ina-01
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Hp 2564
Abstract: M-1004 INA-51063 INA-52063 M2003 Hp+2564
Text: Low Noise Silicon MMIC Amplifiers Reliability Data INA-51063 INA-52063 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability
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INA-51063
INA-52063
MIL-STD-883.
M1004
M1010
M2003
M2031
MILSTD-202,
DOD-HDBK-1686
Hp 2564
M-1004
INA-51063
INA-52063
M2003
Hp+2564
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250GX-0300-55-22
Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT
Text: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical
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MRF6VP11KH
MRF6VP11KHR6
250GX-0300-55-22
CPF320R000FKE14
MRF6VP11KH
1812SMS-82NJLC
ATC200B103KT50X
ATC100B101JT500XT
AN1955
JESD22-A114
MRF6VP11KHR6
T491X226K035AT
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MCCFR0W4J0102A50
Abstract: MRF6VP11KH mccfr0w4j CPF32 MRF6VP11KHR6 MRF6VP11KGSR5
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial,
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MRF6VP11KH
MRF6VP11KHR6
MRF6VP11KGSR5
MCCFR0W4J0102A50
mccfr0w4j
CPF32
MRF6VP11KGSR5
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AT-41511
Abstract: AT-41533
Text: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability
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AT-41511
AT-41533
MIL-STD-883.
MIL-STD-750
MIL-STD-202,
DOD-HDBK-1686
AT-41511/41533
AT-41511
AT-41533
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Untitled
Abstract: No abstract text available
Text: HPMX-2006, HPMX-2007 Integrated Circuits Reliability Data HPMX-2006 HPMX-2007 Description The following cumulative test results have been obtained from testing performed at HewlettPackard Company. Data was gathered from the product qualification, reliability monitor,
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HPMX-2006,
HPMX-2007
HPMX-2006
HPMX-2007
MIL-STD-202,
DOD-HDBK-1686
5968-0731E
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MTTF
Abstract: AT-41511
Text: NPN Silicon Bipolar Transistor Reliability Data AT-4xxxx The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability
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MIL-STD-883.
MIL-STD-202,
DOD-HDBK-1686
AT-41511/41533
5966-0933E
5988-9788EN
MTTF
AT-41511
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Untitled
Abstract: No abstract text available
Text: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability
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AT-41511
AT-41533
MIL-STD-883.
VC200
MIL-STD-202,
DOD-HDBK-1686
AT-41511/41533
5963-5127E
5966-0933E
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IAM-8XXXX
Abstract: MTTF
Text: Silicon Bipolar Active Mixer Reliability Data IAM-8XXXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability
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MIL-STD-883.
DOD-HDBK-1686
MIL-STD-202,
IAM-8XXXX
MTTF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical
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MRF6VP11KH
MRF6VP11KHR6
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Hp 2564
Abstract: DOD-HDBK-1686
Text: warn H E W L E T T miCM P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP inter
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HPMX-3002
MIL-STD-883
DOD-HDBK-1686
MIL-STD-202,
Hp 2564
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XLO8
Abstract: diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A DOD-HDBK-1686 hp 5082-2900 diode
Text: WhoI H EW L E T T 1 "KM PA CK A R D Tri Metal Beam Lead Schottky Diodes Reliability Data HSCH-5300 Series HSCH-5500 Series Conclusion Hewlett-Packard’s beam lead diodes have successfully passed stringent environmental testing. Hewlett-Packard beam lead diodes may be used in military
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HSCH-5300
HSCH-5500
MIL-STD-750
1051C
DOD-HDBK-1686
XLO8
diode hp 5082-2080
hp 5082-2830
DOD-HDBK-1686A
hp 5082-2900 diode
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