SOP32 data sheet
Abstract: PDIP32 PDIP-32-600
Text: U631H1708 Advanced Information SoftStore 128K x 8 nvSRAM Description 5 5 5 0 to 70 ° C -40 to 85 °C CECC 90000 Quality Standard ESD protection > 2000 V MIL STD 883C M3015.7 Packages: SOP32 (450 mil) PDIP32 (600 mil) Pin Configuration n.c. A16 A14 A12 A7
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U631H1708
M3015
PDIP32
D-01109
D-01101
SOP32 data sheet
PDIP32
PDIP-32-600
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PDIP28
Abstract: U630H64
Text: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F
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U630H64
M3015
PDIP28
U630H64
D-01109
D-01101
PDIP28
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PDIP24
Abstract: U6216A
Text: U6216A F ESD protection > 2000 V MIL STD 883C M3015.7 F Latch-up immunity >100 mA F Packages: PDIP24 (600 mil) Features F 2048 x 8 bit static CMOS RAM F 70 and 85 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current
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U6216A
M3015
PDIP24
D-01109
D-01101
PDIP24
U6216A
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PDIP28
Abstract: U630H64
Text: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F
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U630H64
M3015
PDIP28
U630H64
D-01109
D-01101
PDIP28
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SOP32 data sheet
Abstract: PDIP32 U632H1708 a14g
Text: U632H1708 Advanced Information PowerStore 128K x 8 nvSRAM Description 5 5 5 0 to 70 °C -40 to 85 °C CECC 90000 Quality Standard ESD protection > 2000 V MIL STD 883C M3015.7 Packages: SOP32 (450 mil) PDIP32 (600 mil) Pin Configuration VCAP A16 A14 A12 A7
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U632H1708
M3015
PDIP32
D-01109
D-01101
SOP32 data sheet
PDIP32
U632H1708
a14g
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U6216A
Abstract: PDIP24
Text: U6216A F ESD protection > 2000 V MIL STD 883C M3015.7 F Latch-up immunity >100 mA F Packages: PDIP24 (600 mil) Features F 2048 x 8 bit static CMOS RAM F 70 and 85 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current
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U6216A
M3015
PDIP24
D-01109
D-01101
U6216A
PDIP24
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Q3236
Abstract: PE9601 PE9601EK 9601-11 96011
Text: Product Specification PE9601 2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2200 MHz. The device is designed for superior phase noise performance while
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PE9601
PE9601
Q3236
PE9601EK
9601-11
96011
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303F
Abstract: PDIP28 U637256 ZMD AG
Text: U637256 CapStore 32K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U637256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in
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U637256
U637256
D-01109
D-01101
303F
PDIP28
ZMD AG
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3335-21
Abstract: PE3236 PE3335 PE3335EK
Text: ADVANCE INFORMATION PE3335 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE3335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE3335 is ideal
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PE3335
PE3335
PE3236
3335-21
PE3236
PE3335EK
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PDIP24
Abstract: PDIP32 U631H256 U631HM1024 SOP44
Text: U631HM1024 Advanced Information SoftStore 128K x 8 nvSRAM Description Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM Module 4 x 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Times Software STORE Initiation
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U631HM1024
M3015
PDIP32
PDIP24
D-01109
D-01101
PDIP24
PDIP32
U631H256
U631HM1024
SOP44
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PDIP28
Abstract: U631H16 ZMD AG
Text: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
D-01109
D-01101
PDIP28
U631H16
ZMD AG
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ATmega32H
Abstract: PV15100 PCIE10 atmel 718 ac chopper ATMEGA64HVE2
Text: Atmel ATmega32HVE2/ATmega64HVE2 8-bit AVR Microcontroller with Precise Analog Frontend for very Accurate Voltage and Current Measurement PRELIMINARY DATASHEET Features ● Single-package fully-integrated ● High precision analog frontend ● 17bit single-ended voltage-ADC
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ATmega32HVE2/ATmega64HVE2
17bit
SAEJ2602-2
ATmega32H
PV15100
PCIE10
atmel 718
ac chopper
ATMEGA64HVE2
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Q3236
Abstract: pe3236 PE3236EK
Text: PRODUCT SPECIFICATION PE3236 2.2 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE3236 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The superior phase noise performance of the PE3236 is ideal
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PE3236
PE3236
Q3236
PE3236EK
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PLCC32
Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
Text: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In
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U630H16PA35
to125
M3015
PLCC32
U630H16
U630H16
PLCC32
U630H16PA35
GR47
all stk ic diagram
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PE83341
Abstract: PE83341-EK PE83341-PK
Text: PRELIMINARY SPECIFICATION 4 PE83341 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE83341 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis
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PE83341
PE83341
PE83341-EK
PE83341-PK
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PE3339
Abstract: PE83342
Text: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0
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PE83342
PE883342
PE83342
PE3339
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75l00d
Abstract: No abstract text available
Text: áç XRT75L00D E3/DS3/STS-1 LINE INTERFACE UNIT WITH SONET DESYNCHRONIZER NOVEMBER 2003 REV. 1.0.1 • On-chip clock synthesizer provides the appropriate GENERAL DESCRIPTION The XRT75L00D is a single-channel fully integrated Line Interface Unit LIU with Sonet Desynchronizer
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XRT75L00D
XRT75L00D
75l00d
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Untitled
Abstract: No abstract text available
Text: XRT75L04 xr FOUR CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR JANUARY 2006 GENERAL DESCRIPTION The XRT75L04 is a four-channel fully integrated Line Interface Unit LIU with Jitter Attenuator for E3/DS3/ STS-1 applications. It incorporates four independent
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XRT75L04
XRT75L04
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Untitled
Abstract: No abstract text available
Text: XRT73L02M xr TWO CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT MAY 2003 GENERAL DESCRIPTION The XRT73L02M is a two-channel fully integrated Line Interface Unit LIU for E3/DS3/STS-1 applications. It incorporates independent Receivers, Transmitters in a single 100 pin TQFP package.
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XRT73L02M
XRT73L02M
XRT73L02MIV-F
TQFP100
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MO-153-AC
Abstract: PE83339 PE83339EK
Text: PRELIMINARY SPECIFICATION PE83339 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Features • 3.0 GHz operation • ÷10/11 dual modulus prescaler • Internal phase detector with charge pump
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PE83339
20-lead
PE83339
MO-153-AC
PE83339EK
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34.368Mhz oscillator
Abstract: chn 543
Text: XRT75L03 THREE CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR JULY 2003 GENERAL DESCRIPTION The XRT75L03 is a three-channel fully integrated Line Interface Unit LIU with Jitter Attenuator for E3/ DS3/STS-1 applications. It incorporates 3
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XRT75L03
XRT75L03
34.368Mhz oscillator
chn 543
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chn 923
Abstract: No abstract text available
Text: xr XRT75R03 THREE CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH JITTER ATTENUATOR MARCH 2005 REV. 1.0.7 GENERAL DESCRIPTION TRANSMITTER: The XRT75R03 is a three-channel fully integrated Line Interface Unit LIU featuring EXAR’s R3 Technology (Reconfigurable, Relayless Redundancy)
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XRT75R03
XRT75R03
chn 923
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Untitled
Abstract: No abstract text available
Text: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera
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U635H256
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Untitled
Abstract: No abstract text available
Text: U 63 1 H 2 5 6 A v a i l a b l e in Q1 /97 Software Controlled 32Kx 8 nvSRAM Features Description □ High-performance CMOS non volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,15 and 20 ns G-Access □ Software STORE Initiation
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M3015
PDIP28
U631H256
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