Y 1005D
Abstract: MT8S25632
Text: MI CR ON S E M I C O N D U C T O R INC b7E » • b l l l S H T OOO^bfiS 307 « M R N MT8S25632 256K X 32 SRAM MODULE SRAM MODULE 256K X 32 SRAM FEATU RES • H igh speed: 15’ , 2 0 ,2 5 and 35ns • High-density 1MB design • High-perform ance, low-power, CM O S double-m etal
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MT8S25632
64-Pin
MTBS25632
Y 1005D
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T5C1005DJ
Abstract: No abstract text available
Text: M IC R O N MT8S25632 SRAM MODULE 256K x 32 SRAM FEATURES Industry com patible pinout High speed: 20, 25, 35 and 45ns H igh-density 1MB design H igh-perform ance, low-power, CMOS process Single +5V ± 10^ pow er supply Easy m em ory expansion w ith CE function
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MT8S25632
64-Pin
MT6S25632
T5C1005DJ
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MT8S25632
Abstract: No abstract text available
Text: p ilC R O N 256K SRAM MODULE MT8S25632 32 SRAM MODULE X 256K x 32 SRAM FEATURES • High speed: 15*, 20, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE and OE functions
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MT8S25632
64-Pin
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marking wp1
Abstract: MTBS25632
Text: MT8S25632 2 5 6 K X 32 S R A M M O D U L E I^ IIC IR a íM SRAM MODULE 256K x 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions
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OCR Scan
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MT8S25632
64-Pin
MTBS25632
MT9S25632
marking wp1
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