Untitled
Abstract: No abstract text available
Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)
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MT4S24U
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Untitled
Abstract: No abstract text available
Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)
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MT3S16U
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MT3S20R
Abstract: No abstract text available
Text: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)
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MT3S20R
MT3S20R
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MT4S24U
Abstract: No abstract text available
Text: MT4S24U 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S24U 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.55dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 11.5dB(標準) (@f = 2 GHz)
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MT4S24U
20mmx25mmx1
55mmt)
MT4S24U
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MT4S24U
Abstract: MT4S 42GA
Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)
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MT4S24U
MT4S24U
MT4S
42GA
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Untitled
Abstract: No abstract text available
Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07
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MT3S19R
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MT4S03BU
Abstract: MT4S03B MT4S MT4S03
Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)
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MT4S03BU
MT4S03BU
MT4S03B
MT4S
MT4S03
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MT3S19R
Abstract: No abstract text available
Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz)
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MT3S19R
MT3S19R
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MT3S19R
Abstract: No abstract text available
Text: MT3S19R 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19R 単位: mm ○ VHF~UHF 帯 低雑音・低歪み増幅用 +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 雑音特性が優れています。: NF = 1.5 dB 標準 (@f = 1 GHz)
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MT3S19R
OT-23F
20mmx25mmx1
55mmt)
MT3S19R
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MT3S16U
Abstract: No abstract text available
Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)
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MT3S16U
MT3S16U
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Untitled
Abstract: No abstract text available
Text: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07
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MT3S20R
OT23F
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Untitled
Abstract: No abstract text available
Text: MT4S301U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S301U Unit:mm ○ UHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.57dB Typ. (@f=2GHz) • High Gain :|S21e|2=18.1dB(Typ.) (@f=2GHz) • 2 kV ESD robustness (HBM) due to integrated protection circuits
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MT4S301U
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Untitled
Abstract: No abstract text available
Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB typ. (@f = 2GHz) • High Gain: |S21e| = 11.5dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)
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MT4S24U
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Untitled
Abstract: No abstract text available
Text: MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.4dB typ. (@f = 2 GHz) • High Gain: |S21e| = 12dB (typ.) (@f = 2 GHz) • Compatible with 2SC5319 2
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MT4S23U
2SC5319
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Untitled
Abstract: No abstract text available
Text: MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. : NF = 2.4dB (typ.) (@ 2V, 5mA, 1 GHz)
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MT3S16U
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MT4S23U
Abstract: 2-2K1A 2SC5319 IC206 MT4S
Text: MT4S23U 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S23U 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.4dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 12dB(標準) (@f = 2 GHz)
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MT4S23U
2SC5319
20mmx25mmx1
55mmt)
MT4S23U
2-2K1A
2SC5319
IC206
MT4S
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Untitled
Abstract: No abstract text available
Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)
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MT4S03BU
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MT3S20R
Abstract: No abstract text available
Text: MT3S20R 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S20R 単位: mm ○ VHF~UHF 帯 低雑音・低歪み増幅用 +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 雑音特性が優れています。: NF = 1.45 dB 標準 (@f = 1 GHz)
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MT3S20R
OT-23F
20mmx25mmx1
55mmt)
MT3S20R
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2SC5319
Abstract: MT4S
Text: MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.4dB Typ. (@f = 2 GHz) • High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) • Compatible with 2SC5319 1.Emitter1(E1)
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MT4S23U
2SC5319
2SC5319
MT4S
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Untitled
Abstract: No abstract text available
Text: MT4S300U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S300U Unit:mm ○ UHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.55dB Typ. (@f=2GHz) • High Gain :|S21e|2=16.9dB(Typ.) (@f=2GHz) • 2 kV ESD robustness (HBM) due to integrated protection circuits
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MT4S300U
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Untitled
Abstract: No abstract text available
Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB typ. (@f = 2GHz) • High Gain: |S21e| = 9dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)
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MT4S03BU
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Untitled
Abstract: No abstract text available
Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure: NF=1.5dB typ. (@ f=1GHz) • High Gain: |S21e| =13dB (typ.) (@ f=1GHz)
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MT3S19R
OT23F
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Untitled
Abstract: No abstract text available
Text: MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.4dB Typ. (@f = 2 GHz) • High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) • Compatible with 2SC5319 1.Emitter1(E1)
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MT4S23U
2SC5319
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MT3S16T
Abstract: No abstract text available
Text: MT3S16T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16T Unit: mm ○ UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent. • The characteristic of Reverse transfer capacitance Cre is flat. :NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz)
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MT3S16T
MT3S16T
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