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    MT4C4007 Search Results

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    MT4C4007 Price and Stock

    Micron Technology Inc MT4C4007JDJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MT4C4007JDJ-6 17,410
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    Quest Components MT4C4007JDJ-6 13,928
    • 1 $4.5
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    • 100 $4.5
    • 1000 $4.5
    • 10000 $1.575
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    MT4C4007JDJ-6 1,227
    • 1 $4.5
    • 10 $4.5
    • 100 $4.5
    • 1000 $1.8
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    MT4C4007JDJ-6 120
    • 1 $4.2
    • 10 $4.2
    • 100 $2.59
    • 1000 $2.59
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    mt MT4C4007JDJ6

    1 MEG X 4 EDO DRAM EDO DRAM, 1MX4, 60ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MT4C4007JDJ6 1,394
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    MT4C4007 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT4C4007JDJ-6 Micron 1 MEG x 4 EDO DRAM Original PDF
    MT4C4007JDJ-6L Micron DRAM Original PDF
    MT4C4007JDJ-6L Micron 1 MEG x 4 EDO DRAM Original PDF

    MT4C4007 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MT4C4007JDJ-6

    Abstract: MT4C4007JDJ-6L A4 marking EDO DRAM
    Text: OBSOLETE 1 MEG x 4 EDO DRAM MT4C4007J DRAM FEATURES PIN ASSIGNMENT Top View Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#


    Original
    MT4C4007J 024-cycle 128ms 20/26-Pin MT4C4007JDJ-6 MT4C4007JDJ-6L A4 marking EDO DRAM PDF

    MT4C4007JDJ-6

    Abstract: MT4C4007J MT4C4007JDJ-6L
    Text: MT4C4007J L 1 MEG x 4 DRAM TECHNOLOGY, INC. 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible


    Original
    MT4C4007J 024-cycle 128ms 20/26-Pin 128ms MT4C4007JDJ-6 MT4C4007JDJ-6L PDF

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


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    MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT PDF

    MT16D232M

    Abstract: MT16D232 MT4C4007JDJ
    Text: OBSOLETE 1, 2 MEG x 32 DRAM SIMMs MT8D132 X MT16D232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module (SIMM) • 4MB (1 Meg x 32) and 8MB (2 Meg x 32) • High-performance CMOS silicon-gate process


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    MT8D132 MT16D232 72-pin, 024-cycle MT16D232M MT4C4007JDJ PDF

    edo dram 60ns 72-pin simm

    Abstract: MT16D232
    Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES TECHNOLOGY, INC. 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)


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    MT8D132 MT16D232 72-pin, 824mW 024-cycle 72-PiP edo dram 60ns 72-pin simm PDF

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


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    PDF

    EDO DRAM

    Abstract: No abstract text available
    Text: 1 MEG x 4 EDO DRAM M IC R O N I TFCHNOl.GOY l';C DRAM MT4C4007J FEATURES PIN ASSIGNMENT Top View Single +5V ±10% pow er supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible


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    MT4C4007J 024-cycle 128ms 20/26-Pin EDO DRAM PDF

    4c4007

    Abstract: 4007J
    Text: MT4C4007J L 1 MEG X 4 DRAM |u iic n o N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • • • • • S in g le + 5 V ± 1 0 % p o w er su p p ly JE D E C -sta n d a rd p in o u t and p ack ag es H ig h -p erfo rm a n ce C M O S silico n -g ate process


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    MT4C4007J 024-cy 20/26-Pin T2/95 4c4007 4007J PDF

    LIS-1024

    Abstract: No abstract text available
    Text: OBSOLETE M I C R O N 1 ^cnllvZ DRAM E G x 4 MT4C4007J FEATURES PIN ASSIGNMENT Top View • • • • • Single +5V +10% pow er supply JED EC-standard pinout and packages H igh-perform ance CM OS silicon-gate process All inputs, outputs and clocks are TTL-com patible


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    024-cycle 128ms MT4C4007J 20/26-Pin 128ms LIS-1024 PDF

    T4C4007JDJ-7

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C4007J S 1 MEG X 4 DRAM M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CM OS silicon-gate process


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    MT4C4007J 024-cycle 128ms 25-35ns 20/26-Pin T4C4007JDJ-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C4007J L 1 MEG X 4 DRAM (M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process


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    MT4C4007J 024-cycle 128ms 20/26-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY .ü ïïi04,0^ !? -j, MEG x 4 DRAM « ch«oL„ „ « DRAM 1 MEG x 4 DRAM FEATURES * * » * «• Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CMOS silicon-gate process All inputs, outputs and clocks are TTL-com patible


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    024-cycle 128ms 25-35ns 128ms MT4C4007J 001E024 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT8D132 X , MT16D232(X) 1 MEG, 2 MEG x 32 DRAM MODULES MICRON I TÉCHNOICSY INC. DRAM 1 MEG, 2 MEG x 32 II E IV IV J U U L C 4. 8 MEGABYTE, SV, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,


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    MT8D132 MT16D232 72-pin, 824mW 024-cycle PDF

    T4C4007J

    Abstract: No abstract text available
    Text: OBSOLETE 1, 2 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D132 X MT16D232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JED EC - and industry-standard pinout in a 72-pin, single in-line m em ory m odule (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)


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    MT8D132 MT16D232 72-pin, 024-cycle 72-Pin T4C4007J PDF

    MT4C4007JDJ

    Abstract: L32x MT4C4007 MT80132 MT160232 micron simm
    Text: M ir -a r ìM I MT8D132 X , MT16D232(X) 1 MEG, 2 MEG X 32 DRAM MODULES DRAM 1 MEG, 2 MEG x 32 M O D U L E 4, 8 8 MEGABYTE, MEGABYTE, 5V, 5V, FAST R 4, PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,


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    MT8D132 MT16D232 72-pin, 024-cycle 72MEG MT80132 MTie0232 MT4C4007JDJ L32x MT4C4007 MT160232 micron simm PDF

    MT4C4007JDJ-7

    Abstract: MT4C4007JDJ7 marking 3GY MRP21
    Text: PRELIMINARY iimiy—a n i v f wlt4C40Q7J S t MEG x: 4 DRAM 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH ] MATURES • Single +5V ±10% pow er supply ■ JED EC-standard pinout and packages ■ High-performance C M O S silicon-gate process


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    wlt4C40Q7J 024-cycle 128ms 25-35ns 20/26-Pin MT4C4007J C1995. MT4C4007JDJ-7 MT4C4007JDJ7 marking 3GY MRP21 PDF

    EDO DRAM

    Abstract: MT4C4007JDJ-6L MT4C4007JDJ-6
    Text: 1 MEG x 4 EDO DRAM V IIC Z R C H V S DRAM M T4C 4007J FEATURES PIN ASSIGNMENT (Top View Single+5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, CAS#-BEFORE- RAS#


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    4007J 024-cycle 128ms 20/26-Pin 128ms EDO DRAM MT4C4007JDJ-6L MT4C4007JDJ-6 PDF

    MT4C4007JDJ

    Abstract: No abstract text available
    Text: ADVANCE M T 9 D 1 3 6 A X, M T 1 8 D 2 3 6 A X 1 MEG, 2 MEG x 36 DR AM M O D U L E S DRAM MODULE 1 MEG, 2 MEG x 36 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES * * * * * * * * PIN ASSIGNMENT Front View Four CAS# ECC p in o u t in a 72-pin, single-in-line


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    72-Pin 72-pin, 024-cycle MT4C4007JDJ PDF