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    MT3S19 Search Results

    MT3S19 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT3S19 Toshiba Transistors Original PDF
    MT3S19 Toshiba Japanese - Transistors Original PDF
    MT3S19 Toshiba MT3S19 - TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal Original PDF
    MT3S19R Toshiba MT3S19 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOT23F, 3 PIN, BIP RF Small Signal Original PDF
    MT3S19TU Toshiba Japanese - Transistors Original PDF
    MT3S19TU Toshiba Transistors Original PDF
    MT3S19TU Toshiba MT3S19 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, UFM, 2-2U1B, 3 PIN, BIP RF Small Signal Original PDF

    MT3S19 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.


    Original     		PDF MT3S19 O-236 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e| =13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)


    Original     		PDF MT3S19TU

    MT3S19TU

    Abstract: No abstract text available
    Text: MT3S19TU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19TU ○ VHF～UHF 帯 低雑音・低歪み増幅用 単位: mm 2.1±0.1 3 1 UFM JEDEC JEITA 東芝 2-2U1B 質量: 6.6 mg 標準 2 絶対最大定格 (Ta = 25°C)


    Original     		PDF MT3S19TU MT3S19TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 • Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 0.42 -0.05 +0.08 0.17 -0.07


    Original     		PDF MT3S19R

    MT3S19R

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.5dB Typ. (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz)


    Original     		PDF MT3S19R MT3S19R

    MT3S19R

    Abstract: No abstract text available
    Text: MT3S19R 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19R 単位: mm ○ VHF~UHF 帯 低雑音・低歪み増幅用 +0.08 0.05 M A 0.42 -0.05 +0.08 0.17 -0.07 雑音特性が優れています。: NF = 1.5 dB 標準 (@f = 1 GHz)


    Original     		PDF MT3S19R OT-23F 20mmx25mmx1 55mmt) MT3S19R

    MT3S19

    Abstract: No abstract text available
    Text: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.


    Original     		PDF MT3S19 O-236 SC-59 MT3S19

    MT3S19

    Abstract: No abstract text available
    Text: MT3S19 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S19 ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.5 dB 標準 (@ f=1 GHz) • 高利得です。:|S21e|2=12.5 dB (標準) (@ f=1 GHz)


    Original     		PDF MT3S19 O-236 SC-59 MT3S19

    Untitled

    Abstract: No abstract text available
    Text: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 3 2 1.BASE 2.EMITTER 3.COLLECTOR T6 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e|2=13 dB typ. (@ f = 1 GHz)


    Original     		PDF MT3S19TU

    Untitled

    Abstract: No abstract text available
    Text: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12.5 dB (typ.) (@ f=1 GHz) 2 Marking 3 T 1.


    Original     		PDF MT3S19 O-236 SC-59

    Untitled

    Abstract: No abstract text available
    Text: MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure: NF=1.5dB typ. (@ f=1GHz) • High Gain: |S21e| =13dB (typ.) (@ f=1GHz)


    Original     		PDF MT3S19R OT23F

    MT3S19TU

    Abstract: No abstract text available
    Text: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e|2=13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)


    Original     		PDF MT3S19TU MT3S19TU

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original     		PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


    Original     		PDF BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original     		PDF BCE0003H 3sk catalog TE85L Toshiba

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original     		PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586